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APT20M20JFLL
200V 104A 0.020
POWER MOS 7
(R)
R
FREDFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT20M20JFLL UNIT Volts Amps
200 104 416 30 40 463 3.70 -55 to 150 300 100 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
200 0.020 250 1000 100 3 5
(VGS = 10V, ID = 52A)
Ohms A nA Volts
4-2004 050-7045 Rev D
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT20M20JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 100V ID = 104A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 100V ID = 104A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 130V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 130V, VGS = 15V ID = 104A, RG = 5 ID = 104A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
6850 2180 95 110 43 47 13 40 26 2 465 455 920 915
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
104 416 1.3 8
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -104A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -104A, di/dt = 100A/s) Reverse Recovery Charge (IS = -104A, di/dt = 100A/s) Peak Recovery Current (IS = -104A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
220 420 1.07 2.9 12.1 20.6
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.27 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 0.46mH, RG = 25, Peak IL = 104A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID104A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.30
, THERMAL IMPEDANCE (C/W)
0.25
0.9
0.20
0.7
0.15
0.5
Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
4-2004
0.10 0.05 0
0.3
050-7045 Rev D
Z
JC
0.1 0.05 10-5 10-4 SINGLE PULSE
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
RC MODEL
250
ID, DRAIN CURRENT (AMPERES)
APT20M20JFLL
VGS =15 &10V 9V
Junction temp. ( "C) 0.0409 0.0246F
200
150
7.5V 7V
Power (Watts)
0.225
0.406F
100 6.5 50 6V 5.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
0.00361 Case temperature
0.147.639F
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
200 180
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
NORMALIZED TO = 10V @ I = 52A
D
160 140 120 100 80 60 40 20 0 01 23 456 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS TJ = +125C TJ = +25C TJ = -55C
1.30 1.20 1.10 VGS=10V 1.00 0.90 0.80 VGS=20V
0
110 100
ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON)vs DRAIN CURRENT
90 80 70 60 50 40 30 20 10 0 25
1.10
1.05
1.00
0.95
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I V
D
0.90 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 52A = 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7045 Rev D
4-2004
415
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000 100S
APT20M20JFLL
Ciss
ID, DRAIN CURRENT (AMPERES)
100
C, CAPACITANCE (pF)
Coss 1,000
1mS 10 10mS
100
Crss
TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 75A
200 100 TJ =+150C TJ =+25C
12
VDS=40V VDS=100V
VDS=160V
8
10
4
40 60 80 100 120 140 160 180 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 90 80 70 td(off)
V
DD G
0
0
20
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 160 140 120
V
DD G
= 130V
R
= 5
T = 125C
J
L = 100H
td(on) and td(off) (ns)
60 50 40 30 20 10 0 20
= 130V
R
= 5
tr and tf (ns)
100 80 60 40 20 tf tr
T = 125C
J
L = 100H
td(on)
80 100 120 140 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
40
60
80 100 120 140 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 2500
0 20
40
60
1400
= 130V
1200
SWITCHING ENERGY (J)
R
= 5
T = 125C L = 100H E ON includes diode reverse recovery.
1000 800 600
SWITCHING ENERGY (J)
J
2000 Eoff 1500 Eon 1000
V I
DD
Eon 400 200 0 20
= 130V
4-2004
D J
= 100A
500
T = 125C L = 100H EON includes diode reverse recovery.
050-7045 Rev D
Eoff 40 60 0 0 5
80 100 120 140 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
90% 10% Gate Voltage TJ125C
APT20M20JFLL
Gate Voltage
td(on) tr
Drain Current
td(off) tf
90% 10% Drain Voltage
TJ125C
90%
5% Switching Energy
10%
5%
Drain Voltage Switching Energy
0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT100S20B
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7045 Rev D
4-2004
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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