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APM9928
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
*
N-Channel 20V/5A , RDS(ON)=35m(typ.) @ VGS=4.5V RDS(ON)=50m(typ.) @ VGS=3.0V
Pin Description
5 / 5 / ! " & % $ # , , , ,
*
P-Channel -20V/-3.2A , RDS(ON)=80m(typ.) @ VGS=-4.5V RDS(ON)=120m(typ.) @ VGS=-3.0V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package
/ ,
SO-8
, 5
* * *
/
Applications
5
*
,
,
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
N-Channel MOSFET
P-Channel MOSFET
Ordering and Marking Information
APM9928
Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150C Handling Code TR : Tape & Reel
APM9928 K :
APM9928 XXXXX
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003 1 www.anpec.com.tw
APM9928
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM PD TJ TSTG RjA Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Continuous Maximum Drain Current Pulsed Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance Junction to Ambient TA=25C TA=100C
(TA = 25C unless otherwise noted)
N-Channel 20 16 5 10 2.5 1.0 150 -55 to 150 50 P-Channel -20 16 3.2 -10 2.5 1.0 Unit V A W C C C/W
* Surface Mounted on FR4 Board, t 10 sec.
Electrical Characteristics
Symbol Static BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Parameter
(TA = 25C unless otherwise noted)
APM9928 Min. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 35 50 80 120 0.8 -0.8 0.7 -0.7 0.9 -0.9 20 -20 1 -1 1.5 -1.5 100 100 45 60 100 150 1.3 -1.3 V m Typ. Max.
Test Condition
Unit
VGS=0V , IDS=250A VDS=16V , VGS=0V VDS=-16V , VGS=0V VDS=VGS , IDS=250A VDS=VGS , IDS=-250A VGS=16V , VDS=0V VGS=4.5V , IDS=5.0A
V A V nA
RDS(ON)=
Drain-Source On-state Resistance
VGS=3.0V , IDS=3.9A VGS=-4.5V , IDS=-3.2A VGS=-3.0V , IDS=-2.0A ISD=1.7A , VGS=0V ISD=-1.8A , VGS=0V
VSD=
Diode Forward Voltage
Notes
a
: Pulse test ; pulse width 300s, duty cycle 2%
Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003
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APM9928
Electrical Characteristics (Cont.)
Symbol Dynamic Q g Qgs Qgd td(ON) T r td(OFF) T f Ciss Coss Crss
>
(TA = 25C unless otherwise noted)
APM9928 Unit Min. Typ. Max. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 4.7 3.9 0.72 1 0.96 1.4 12 21 8 45 32 36 11 20 376 495 115 130 58 60 pF 24 40 17 83 60 70 22 38 ns 7 6 nC
Parameter
Test Condition
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance
N-Channel VDS=10V , IDS= 1A VGS=4.5V P-Channel VDS=-10V , IDS=-1A VGS=-4.5V N-Channel VDD=10V , IDS=1A , VGEN=4.5V , RG=10 P-Channel VDD=-10V , IDS=-1A , VGEN=-4.5V , RG=10
VGS=0V Output Capacitance Reverse Transfer Capacitance VDS=15V Frequency=1.0MHz
Notes
b
: Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003
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APM9928
Typical Characteristics
N-Channel
Output Characteristics
20
Transfer Characteristics
20
VGS=4,5,6,7,8,9,10V
VGS=3V
ID-Drain Current (A)
15
10
VGS=2.5V
ID-Drain Current (A)
15
TJ=125C
5
VGS=2V VGS=1.5V
5
TJ=25C
TJ=-55C
0
0
1
2
3
4
5
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
On-Resistance vs. Drain Current
0.07
IDS=250uA
VGS(th)-Threshold Voltage (V) (Normalized)
RDS(ON)-On-Resistance ()
1.25 1.00 0.75 0.50 0.25 0.00 -50
0.06 0.05 0.04 0.03 0.02 0.01
VGS=4.5V
VGS=10V
-25
0
25
50
75
100 125 150
0
1
2
3
4
5
6
7
8
9
10
Tj - Junction Temperature (C)
ID - Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003
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APM9928
Typical Characteristics (Cont.)
N-Channel
On-Resistance vs. Gate-to-Source Voltage
0.10 0.09
On-Resistance vs. Junction Temperature
1.8
ID=5A
RDS(ON)-On-Resistance ()
0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 1 2 3 4 5 6 7 8 9 10
RDS(ON)-On-Resistance () (Normalized)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50
VGS=4.5V ID=5A
VGS - Gate-to-Source Voltage (V)
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (C)
Gate Charge
5 600 V,5=10 V I,5= 1 A 500
Capacitance
VGS-Gate-Source Voltage (V)
Frequency=1MHz
4
Capacitance (pF)
3
400 300 200
Ciss
2
1
Coss
100 0 1 2 3 4 5 0
Crss
0
0
5
10
15
20
QG - Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003
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APM9928
Typical Characteristics (Cont.)
N-Channel
Source-Drain Diode Forward Voltage
20 10
Single Pulse Power
30 25
IS-Source Current (A)
TJ=150C
TJ=25C
Power (W)
20 15 10 5
1
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0 0.01
0.1
1
10
30
VSD -Source-to-Drain Voltage (V)
Time(sec)
Normalized Thermal Transient Impedence, Junction to Ambient
2
Normalized Effective Transient Thermal Impedance
1
Duty Cycle=0.5
D=0.2 D=0.1
0.1
D=0.05
D=0.02
SINGLE PULSE
1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA
0.01 1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003
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APM9928
Typical Characteristics
P-Channel
Output Characteristics
10
Transfer Characteristics
10
-VGS=4,5,6,7,8,9,10V
-ID-Drain Current (A)
6
-VGS=3V
-ID-Drain Current (A)
8
8
6
4
-VGS=2.5V
4
TJ=125C TJ=-55C TJ=25C
2
-VGS=2V
2
0
0
1
2
3
4
5
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
-VDS - Drain-to-Source Voltage (V)
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
On-Resistance vs. Drain Current
0.20
-IDS=250uA
-VGS(th)-Threshold Voltage (V) (Normalized)
1.25 1.00 0.75 0.50 0.25 0.00 -50
RDS(ON)-On-Resistance ()
0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00
-VGS=4.5V -VGS=3V
-25
0
25
50
75
100 125 150
Tj - Junction Temperature (C)
0
1
2
3
4
5
6
7
8
9
10
-ID - Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003
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APM9928
Typical Characteristics (Cont.)
P-Channel
On-Resistance vs. Gate-to-Source Voltage
0.20
On-Resistance vs. Junction Temperature
1.8
RDS(ON)-On-Resistance ()
0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 2 3 4 5 6 7 8 9 10
RDS(ON)-On-Resistance () (Normalized)
0.18
-ID=3.2A
1.6 1.4 1.2 1.0 0.8 0.6
-VGS=4.5V -ID=3.2A
0.4 -50
-25
0
25
50
75
100 125 150
-VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (C)
Gate Charge
5 800 -V,5=10 V -I,5= 1 A 700
Capacitance
-VGS-Gate-Source Voltage (V)
Frequency=1MHz
4
Capacitance (pF)
600 500
Ciss
3
2
300 200 100
Coss Crss
1
0
0
1
2
3
4
5
6
0
0
5
10
15
20
QG - Gate Charge (nC)
-VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003
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400
APM9928
Typical Characteristics (Cont.)
P-Channel
Source-Drain Diode Forward Voltage
20 10
Single Pulse Power
30 25
-IS-Source Current (A)
1
10 5 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.01
0.1
1
10
30
-VSD -Source-to-Drain Voltage (V)
Time(sec)
Normalized Thermal Transient Impedence, Junction to Ambient
2
Normalized Effective Transient Thermal Impedance
1
Duty Cycle=0.5
D=0.2 D=0.1
0.1
D=0.05 D=0.02
SINGLE PULSE
1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA
0.01 1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003
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TJ=150C
TJ=25C
Power (W)
20 15
APM9928
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
E
H
e1 D
e2
A1
A
1 L
0.004max.
Dim A A1 D E H L e1 e2 1
Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27BSC 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013
0.015X45
Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50BSC 8
Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003
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APM9928
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Peak temperature 183C Pre-heat temperature
Classification Reflow Profiles
Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature
Time
VPR 10 C /second max. 60 seconds 215-219C or 235 +5/-0C 10 C /second max.
Package Reflow Conditions
pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C
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Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003
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APM9928
Reliability test program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape & Reel Dimensions
E Po P P1 Bo D
t
W
F
Ao
D1 T2
Ko
J A C B
T1
Application
A 330 1
B 62 +1.5 D
C 12.75+ 0.15 D1
J 2 0.5 Po
T1 12.4 0.2 P1 2.0 0.1
T2 2 0.2 Ao 6.4 0.1
W 12 0. 3 Bo 5.2 0. 1
P 8 0.1 Ko
E 1.750.1 t
SOP- 8
F 5.5 1
1.55 +0.1 1.55+ 0.25 4.0 0.1
2.1 0.1 0.30.013
Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003
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APM9928
Cover Tape Dimensions
Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003
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