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| AP2N7002K Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Small Package Outline Surface Mount Device RoHS Compliant S SOT-23 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 2 640mA Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1,2 3 3 Rating 60 20 640 500 950 1.38 0.01 -55 to 150 -55 to 150 Units V V mA mA mA W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit /W Data and specifications subject to change without notice 200209062-1/4 AP2N7002K Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 60 1 - Typ. 0.06 600 1 0.5 0.5 12 10 56 29 32 8 6 Max. Units 2 4 2.5 10 100 30 1.6 50 V V/ V mS uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=500mA VGS=4.5V, ID=200mA VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=600mA VDS=60V, VGS=0V VDS=48V ,VGS=0V VGS=20V ID=600mA VDS=50V VGS=4.5V VDS=30V ID=600mA RG=3.3,VGS=10V RD=52 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=1.2A, VGS=0V Min. - Typ. - Max. Units 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad. 2/4 AP2N7002K 1.0 1.0 T A =25 o C 0.8 ID , Drain Current (A) ID , Drain Current (A) 10V 7.0V 5.0V 4.5V T A = 150 C 0.8 o 10V 7.0V 5.0V 4.5V 0.6 0.6 0.4 0.4 V G = 3.0 V 0.2 V G = 3.0 V 0.2 0.0 0.0 2.0 4.0 6.0 0.0 0 2 4 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3.0 2.0 I D = 200m A 2.5 T A =25 o C Normalized RDS(ON) 1.5 I D = 500m A V G =10V RDS(ON) (m ) 2.0 1.0 1.5 1.0 2 4 6 8 10 0.5 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.7 0.6 Normalized VGS(th) (V) 0.4 1.3 IS(A) T j =150 C o T j =25 C o 0.2 0.9 0 0 0.4 0.8 1.2 1.6 0.5 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP2N7002K f=1.0MHz 16 100 VGS , Gate to Source Voltage (V) I D = 600m A 12 C iss V DS = 30 V V DS =40V V DS =50V 8 C (pF) 10 C oss C rss 4 0 0 0.5 1 1.5 2 1 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1.000 1 1ms 0.100 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 10ms 100ms 1s 0.1 0.1 0.05 ID (A) PDM 0.01 t T 0.010 0.01 Single Pulse T A =25 o C Single Pulse DC Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 270 /W 0.001 0.1 1 10 100 1000 0.001 0.0001 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 1.0 V DS =5V 0.8 VG QG 4.5V QGS QGD ID , Drain Current (A) T j =25 o C 0.6 T j =150 o C 0.4 0.2 Charge 0.0 Q 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
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