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Rev 2: Oct 2004
AOB420, AOB420L (Green Product) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB420 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. AOB420L (Green Product) is offered in a Lead Free package.
Features
VDS (V) = 30V ID = 110A RDS(ON) < 6.5m (VGS = 10V) RDS(ON) < 10.0m (VGS = 4.5V)
TO-263 D2-PAK
D Top View Drain Connected to Tab G S
G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation B Power Dissipation
A C
Maximum 30 20 110 65 200 30 120 100 50 3.1 2 -55 to 175
Units V V A A mJ W W C
TC=25C
G
TC=100C B
ID IDM IAR EAR PD PDSM TJ, TSTG
TC=100C TA=25C TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 8.1 33 1
Max 12 40 1.5
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AOB420, AOB420L
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=30A Forward Transconductance VDS=5V, ID=30A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1.5 110 5.05 7.7 8.2 60 0.72 1 110 1320 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 533 154 0.95 25.5 VGS=4.5V, VDS=15V, ID=30A 13.3 3.2 6.7 7.7 VGS=10V, VDS=15V, RL=0.5, RGEN=3 IF=30A, dI/dt=100A/s
2
Min 30
Typ
Max
Units V
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
1 5 100 2.15 2.5 6.5 11 10
A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
28 22.2 20.7 30.7 21.8
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on steady-state R JA and the maximum allowed junction temperature of 150C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175C may be used if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOB420, AOB420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 50 40 ID (A) 30 3.5V 20 10 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 5.0V 10V 4.0V 60 50 40 ID(A) 30 25C 20 10 0 1.5 2 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 2.5 4.5 VDS=5V
125C
VGS=3V
10 9 RDS(ON) (m) 8 7 6 5 4 0 10 20 30 40 50 60 VGS=10V
1.8 Normalized On-Resistance ID=30A VGS=10V
VGS=4.5V
1.6
1.4 VGS=4.5V
1.2
1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01 125C
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 20
16 RDS(ON) (m)
ID=30A
1.0E+00 IS (A) 1.0E-01 1.0E-02 1.0E-03 1.0E-04
12
25C
125C 25C
8
4 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05 0.0 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 0.2 0.4 1.2
Alpha & Omega Semiconductor, Ltd.
AOB420, AOB420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 30 2400 VDS=15V ID=30A Capacitance (pF) 2000 1600 1200 Coss 800 400 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss
Ciss
1000 RDS(ON) limited 1ms 10ms 0.1s 1s 1 TJ(Max)=150C TA=25C 10s DC 10s Power (W) 100s
100 80 60 40 20 0 0.01 100
TJ(Max)=150C TA=25C
100 ID (Amps)
10
0.1 0.1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
10 ZJA Normalized Transient Thermal Resistance
1
D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=40C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD 0.01 Single Pulse Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOB420, AOB420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 ID(A), Peak Avalanche Current 100 80 60 40 20 0 0.00001 TA=25C Power Dissipation (W) 0.001 0.01 120 100 80 60 40 20 0 0.0001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B)
tA =
L ID BV - V DD
Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability
120 100 Current rating ID(A) 80 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
Document No.
PD-00081
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
Version
Title
rev C
AOB420 Marking Description
D2PAK PACKAGE MARKING DESCRIPTION
B420
B420
Standard product
Green product
NOTE: LOGO B420 F&A Y W LT
- AOS LOGO - PART NUMBER CODE. - FOUNDRY AND ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE
AOB420
PART NO. DESCRIPTION Standard product AOB420L Green product
CODE B420 B420
Rev. A
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
TO-263 (D2PAK) Tape and Reel Data
TO-263 (D2PAK) Carrier Tape
FEEDING DIRECTION
TO-263 (D2PAK) Reel
TO-263 (D2PAK) Leader / Trailer & Orientation

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