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| Low Noise/Medium Power GaAs MESFET Chips AFM04P3-212, AFM04P3-213 Features s Low Noise Figure, 0.6 dB @ 4 GHz s 20 dBm Output Power @ 18 GHz s High Associated Gain, 13 dB @ 4 GHz s High Power Added Efficiency, 25% s Broadband Operation, DC-26 GHz s Available in Tape and Reel Packaging Source 212 Gate Drain Source Gate Source Drain 213 Source Description The AFM04P3-212, 213 are high performance power GaAs MESFET chips having a gate length of 0.25 m and a total gate periphery of 400 m. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. They also have excellent noise performance and can be used in the first and second stage of low noise amplifier design. The AFM04P3 employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Absolute Maximum Ratings Characteristic Drain to Source Voltage (VDS) Gate to Source Voltage (VGS) Drain Current (IDS) Gate Current (IGS) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH) Value 6V -4 V IDSS 1 mA 700 mW -65 to +150C 175C Electrical Specifications at 25C Parameter Saturated Drain Current (IDSS) Transconductance (gm) Pinch-Off Voltage (VP) Gate to Drain Breakdown Voltage (Vbgd) Noise Figure (NF) Associated Gain (GA) Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) Power Added Efficiency (add) Test Conditions VDS = 2 V, VGS = 0 V VDS = 5 V, IDS = 1 mA IGD = -400 A Min. 90.0 60.0 1.0 8.0 Typ. 140.0 80.0 3.0 12.0 0.6 13.8 20.0 VDS = 5 V, IDS = 70 mA, F = 18 GHz 9.0 25.0 5.0 Max. 190.0 Unit mA mS -V -V dB dB dBm dB % VDS = 2 V, IDS = 25 mA, F = 4 GHz Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 6/99A 1 Low Noise/Medium Power GaAs MESFET Chips AFM04P3-212, AFM04P3-213 Typical Performance Data 150 VGS = 0 V 120 -0.5 V Typical Noise Parameters (VDS = 2 V, IDS = 25 mA) Freq. (GHz) 2 3 4 5 6 7 8 4 5 9 10 11 12 NFMIN (dB) 0.32 0.43 0.54 0.62 0.71 0.81 0.90 1.00 1.09 1.19 1.28 opt Mag. 0.840 0.816 0.760 0.707 0.658 0.613 0.573 0.538 0.509 0.488 0.473 Ang. 22.0 39.9 55.1 71.0 87.6 104.8 122.5 140.5 158.8 177.3 -164.2 RN (Normalized) 0.32 0.30 0.28 0.25 0.20 0.16 0.11 0.08 0.06 0.05 0.06 GA (dB) 15.81 14.75 13.85 13.04 12.31 11.66 11.09 10.58 10.13 9.74 9.39 lDS (mA) 90 60 30 0 0 1 2 3 -1.0 V -1.5 V -2.0 V -2.5 V VDS (V) I-V Typical S-Parameters (VDS = 5 V, IDS = 75 mA) Freq. (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 S11 Mag. 0.889 0.846 0.839 0.845 0.840 0.721 0.708 0.726 0.662 0.627 0.647 0.664 0.757 0.854 0.877 0.817 0.854 0.829 0.808 0.868 0.842 0.892 1.003 0.913 0.810 Ang. -52.589 -73.729 -93.128 -114.624 -138.378 -161.239 176.151 155.765 141.259 127.290 104.509 91.536 76.937 59.140 41.254 22.517 8.149 0.211 -6.381 -25.384 -44.086 -65.418 -85.660 -102.209 -125.908 Mag. 5.318 4.630 4.202 4.052 3.858 3.642 3.365 3.020 2.841 2.606 2.340 2.295 2.271 2.151 2.030 1.775 1.516 1.387 1.295 1.311 1.290 1.195 1.138 1.071 0.925 S21 Ang. 130.730 107.339 94.408 72.773 53.962 36.964 21.074 8.127 -7.015 -22.373 -40.840 -54.578 -73.712 -91.255 -108.970 -124.675 -138.209 -150.773 -163.174 177.989 158.446 137.339 120.757 101.362 76.234 Mag. 0.025 0.032 0.035 0.039 0.043 0.046 0.051 0.052 0.061 0.067 0.078 0.098 0.125 0.138 0.156 0.153 0.148 0.159 0.158 0.177 0.190 0.186 0.182 0.183 0.152 S12 Ang. 60.396 43.999 47.172 33.811 26.985 24.957 26.565 25.272 22.692 17.602 7.397 3.156 -14.059 -29.083 -44.222 -58.620 -66.477 -79.718 -90.627 -106.327 -124.276 -140.906 -154.898 -171.299 167.541 Mag. 0.603 0.547 0.442 0.442 0.433 0.459 0.444 0.367 0.379 0.364 0.313 0.353 0.464 0.480 0.477 0.510 0.532 0.667 0.750 0.642 0.654 0.721 0.755 0.714 0.630 S22 Ang. -38.675 -55.205 -58.792 -71.114 -87.725 -102.826 -115.757 -124.557 -139.923 -155.126 -168.618 160.641 138.233 121.701 102.016 74.410 52.097 43.603 36.702 24.887 -3.077 -31.972 -40.865 -57.178 -89.282 MAG/ MSG (dB) 23.226 21.552 20.739 20.126 19.554 18.966 18.196 15.515 13.767 12.218 11.224 12.045 12.603 11.912 11.136 10.633 10.094 9.418 9.137 8.692 8.319 8.090 7.956 7.671 7.853 2 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 6/99A Low Noise/Medium Power GaAs MESFET Chips AFM04P3-212, AFM04P3-213 212 0.036 (0.91 mm) 213 0.036 (0.91 mm) 2 PLACES 0.020 (0.51 mm) 2 PLACES GATE 0.07 (1.78 mm) 0.027 (0.70 mm) 4 PLACES SOURCE DRAIN 0.070 (1.78 mm) SOURCE DRAIN 0.020 (0.51 mm) 2 PLACES GATE 0.070 (1.78 mm) 4 PLACES 45 SOURCE 0.005 (0.13 mm) 4 PLACES SOURCE 45 0.005 (0.13 mm) 4 PLACES 0.067 (1.70 mm) MAX. 0.067 (1.70 mm) Max. Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 6/99A 3 |
Price & Availability of AFM04P3-212
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