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| 4N39 PHOTO SCR OPTOCOUPLER FEATURES * Turn On Current (IFT), 5.0 mA Typical * Gate Trigger Current (IGT), 20 mA * Surge Anode Current, 10 Amp * Blocking Voltage, 200 VACPK * Gate Trigger Voltage (VGT), 0.6 Volt * Isolation Voltage, 5300 VACRMS * Solid State Reliability * Standard DIP Package * Underwriters Lab File #E52744 DESCRIPTION The 4N39 is an optically coupled SCR with a Gallium Arsenide infrared emitter and a silicon photo SCR sensor. Switching can be achieved while maintaining a high degree of isolation between triggering and load circuits. The 4N39 can be used in SCR triac and solid state relay applications where high blocking voltages and low input current sensitivity are required. Maximum Ratings Emitter Peak Reverse Voltage ....................................6.0 V Peak Forward Current (100 s, 1% Duty Cycle)............................. 1.0 A Continuous Forward Current ........................ 60 mA Power Dissipation at 25C..........................100 mW Derate Linearly from 50C .........................2 mW/C Detector Reverse Gate Voltage .....................................6.0 V Anode Peak Blocking Voltage .......................200 V Peak Reverse Gate Voltage ...............................6 V Anode Current ............................................ 300 mA Surge Anode Current (100 s duration) .......... 10 A Surge Gate Current (5 ms duration)........... 100 mA Power Dissipation, 25C ambient ..............400 mW Derate Linearly from 25C .........................8 mW/C Package Isolation Test Voltage (1 sec.) .......... 5300 VACRMS Isolation Resistance VIO=500 V, TA=25C ............................... 1012 VIO=500 V, TA=100C ............................. 1011 Total Package Dissipation ..........................450 mW Derate Linearly from 50C .........................9 mW/C Operating Temperature ................-55C to +100C Storage Temperature....................-55C to +150C Soldering Temperature (10 s.).......................260C Package Dimensions in Inches (mm) Pin One ID. 3 .248 (6.30) .256 (6.50) 4 5 6 2 1 Anode 1 Cathode 2 NC 3 6 Gate 5 Anode 4 Cathode .335 (8.50) .343 (8.70) .039 (1.00) min. 4 typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .130 (3.30) .150 (3.81) 18 typ. .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) .110 (2.79) .150 (3.81) Characteristics (TA=25C) Symbol Emitter Forward Voltage Reverse Current Detector Forward Blocking Voltage Reverse Blocking Voltage Min. Typ . 1.2 Max . 1.5 10 Unit Condition VF IR VDM VRM VTM IH V A V V IF=20 mA VR=5 V RGK=10 K TA=100C Id=150 A 200 200 1.2 200 0.6 1.0 On-state Voltage Holding Current Gate Trigger Voltage Forward Leakage Current V A V ITM=300 mA RGK=27 K VFX=50 V VFX=100 V RGK=27 K RL=10 K RGK=10 K VRX=200 V IF=0, TA=100C RGK=27 K VRX=200 V IF=0, TA=100C VFX=50 V RGK=10 K VFX=100 V RGK=27 K VGT IDM 50 A Reverse Leakage Current IRM 50 A Package Turn-0n Current IFT 15 8 Isolation Capacitance 5-36 30 14 mA 2 pF f=1 MHz |
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