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I27126 rev. C 02/03
40MT120UH
"HALF-BRIDGE" IGBT MTP
Features
Technology * Positive VCE(ON)Temperature Coefficient * 10s Short Circuit Capability * HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery * Low Diode VF * Square RBSOA * Aluminum Nitride DBC * Optional SMT Thermistor (NTC) * Very Low Stray Inductance Design for High Speed Operation * UL approved (file E78996)
* UltraFast Non Punch Through (NPT)
UltraFast NPT IGBT
VCES = 1200V IC = 80A TC = 25C
Benefits
Applications * Rugged with UltraFast Performance * Benchmark Efficiency above 20KHz * Outstanding ZVS and Hard Switching Operation * Low EMI, requires Less Snubbing * Excellent Current Sharing in Parallel Operation * Direct Mounting to Heatsink * PCB Solderable Terminals
* Optimized for Welding, UPS and SMPS
MMTP
Absolute Maximum Ratings Parameters
VCES I I I I I
C
Max
1200 @ TC = 25C @ TC = 105C 80 40 160 160 @ TC = 105C 21 160 20 2500 463 185 @ TC = 25C @ TC = 100C
Units
V A
Collector-to-Emitter Breakdown Voltage Continuos Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation (only IGBT)
CM LM F FM
VGE VISOL PD
V W
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40MT120UH
I27126 rev. C 02/03
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
V(BR)CES V(BR)CES/ T J VCE(ON)
Min Typ Max Units Test Conditions
+1.1 3.36 4.53 3.88 5.35 -12 35 0.4 0.2 250 1.0 10 250 3.59 4.91 4.10 5.68 6 V V/C V VGE = 0V, I C = 250A VGE = 0V, I C = 3mA (25-125C) = = = = = = = = = = = 15V, I C = 40A 15V, I C = 80A 15V, I C = 40A T J = 150C 15V, I C = 80A T J = 150C VGE, I C = 500A VGE, I C = 1mA (25-125C) 50V, IC = 40A, PW = 0V, V CE = 1200V, TJ 0V, V CE = 1200V, TJ 0V, V CE = 1200V, TJ 20V 80s = 25C = 125C = 150C
Collector-to-Emitter Breakdown Voltage 1200 Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th) / T J g fe I CES
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Transconductance Zero Gate Voltage Collector Current
4
VGE VGE VGE VGE V VCE mV/C VCE S A mA nA VCE VGE VGE VGE VGE
I GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area
Min Typ Max Units Test Conditions
399 43 187 1142 1345 2487 1598 1618 3216 599 65 281 1713 2018 3731 2397 2427 4824 nC IC = 40A VCC = 600V VGE = 15V VCC = 600V, IC = 40A VGE = 15V, Rg = 5, L = 200H TJ = 25C, Energy losses include tail and diode reverse recovery VCC = 600V, IC = 40A VGE = 15V, Rg = 5, L = 200H TJ = 125C, Energy losses include tail and diode reverse recovery VGE = 0V VCC = 30V f = 1.0 MHz TJ = 150C, IC = 160A VCC = 1000V, Vp = 1200V Rg = 5, VGE = +15V to 0V TJ = 150C VCC = 900V, Vp = 1200V Rg = 5, VGE = +15V to 0V
J
J
5521 8282 380 570 171 257 full square
pF
SCSOA
Short Circuit Safe Operating Area
10
s
2
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40MT120UH
Bulletin I27126 rev. B 10/02
Diode Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
V FM Diode Forward Voltage Drop
Min
Typ Max Units Test Conditions
2.98 3.90 3.08 4.29 3.12 574 120 43 3.38 4.41 3.39 4.72 3.42 861 180 65 V I C = 40A I C = 80A I C = 40A, TJ = 125C I C = 80A, TJ = 125C I C = 40A, TJ = 150C VGE = 15V, Rg = 5, L = 200H VCC = 600V, IC = 40A T J = 125C
Erec trr Irr
Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current
J ns A
Thermistor Specifications (40MT120UHT only)
Parameters
R0
(1) (1) (1) (2)
Min Typ
30 4000
(2)
Max Units Test Conditions
k K T 0 = 25C T 0 = 25C T 1 = 85C Temperatures in Kelvin
Resistance Sensitivity index of the thermistor material
T0,T1 are thermistor's temperatures
R0 = exp R1
[(1 T
0
1 T1
)],
Thermal- Mechanical Specifications
Parameters
TJ T STG RthJC RthCS Operating Junction Temperature Range Storage Temperature Range Junction-to-Case Case-to-Sink IGBT Diode Module 5.5 8 3 10% 66 Nm g (oz)
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Min
- 40 - 40
Typ
Max
150 125
Units
C C/ W
0.20 0.39 0.06
0.27 0.59
Clearance (external shortest distance in air
between two terminals)
mm
Creepage (shortest distance along external
surface of the insulating material between 2 terminals)
T Wt
Mounting torque to heatsink Weight
compound. Lubricated threads
(3)
(3) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
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40MT120UH
I27126 rev. C 02/03
100
600 500 400
80
PD (W)
60
IC (A)
300 200
40
20
100 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 T C (C) T C (C)
0
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
1000
1000
100
100
10
IC (A)
10 s 100 s
IC (A)
10 1
1 10ms 0.1 DC
0.01 1 10 100 VCE (V) 1000 10000
10
100
1000
10000
VCE (V)
Fig. 3 - Forward SOA TC = 25C; TJ 150C
Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V
4
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40MT120UH
Bulletin I27126 rev. B 10/02
160 140 120 100
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
160 140 120 100
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
ICE (A)
80 60 40 20 0 0 2 4 6 VCE (V) 8 10
ICE (A)
80 60 40 20 0 0 2 4 6 VCE (V) 8 10
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
160 140 120 100
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
120 100 80 -40C 25C 125C
ICE (A)
IF (A)
80 60 40 20 0 0 2 4 6 VCE (V) 8 10
60 40 20 0 0.0 1.0 2.0 3.0 4.0 5.0 VF (V)
Fig. 7 - Typ. IGBT Output Characteristics TJ = 125C; tp = 80s
Fig. 8 - Typ. Diode Forward Characteristics tp = 80s
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40MT120UH
I27126 rev. C 02/03
20 18 16 14 ICE = 80A ICE = 40A ICE = 20A
20 18 16 14 ICE = 80A ICE = 40A ICE = 20A
VCE (V)
10 8 6 4 2 0 5 10 VGE (V) 15 20
VCE (V)
12
12 10 8 6 4 2 0 5 10 VGE (V) 15 20
Fig. 9 - Typical VCE vs. VGE TJ = -40C
Fig. 10 - Typical VCE vs. VGE TJ = 25C
20 18 16 14 ICE = 80A ICE = 40A ICE = 20A
350 300 250 T J = 25C T J = 125C
VCE (V)
10 8 6 4 2 0 5 10 VGE (V) 15 20
ICE (A)
12
200 150 100 50 0 0 5 10 VGE (V) 15 20
Fig. 11 - Typical VCE vs. VGE TJ = 125C
Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
6
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40MT120UH
Bulletin I27126 rev. B 10/02
4800 4200 3600
1000
tdOFF
Energy (J)
3000 2400 1800 1200 600 0 0 20 40 IC (A) 60 80 100 EON EOFF
Swiching Time (ns)
100
tR tdON tF
10 0 20 40 60 80 100
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 125C; L=250H; VCE= 400V RG= 5; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC TJ = 125C; L=250H; VCE= 400V RG= 5; VGE= 15V
6000
10000
5000
EON
Swiching Time (ns)
Energy (J)
4000
EOFF
td OFF
1000
3000
100
2000
tdON tR tF
1000 0 10 20 30 40 50 60
10 0 10 20 30 40 50 60
RG ( )
R G ( )
Fig. 15 - Typ. Energy Loss vs. RG TJ = 150C; L=250H; VCE= 600V ICE= 40A; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG TJ = 150C; L=250H; VCE= 600V ICE= 40A; VGE= 15V
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40MT120UH
I27126 rev. C 02/03
50
50
RG = 5.0
40
RG = 10 RG = 30 RG = 50
40
IRR (A)
30
IRR (A)
30
20
20
10
0 10 20 30 40 50 60 70
10 0 10 20 30 40 50 60
IF (A)
RG ( )
Fig. 17 - Typical Diode IRR vs. IF TJ = 125C
Fig. 18 - Typical Diode IRR vs. RG TJ = 125C; IF = 40A
50 45 40 35
5.0 4.5 4.0 3.5
60A 40A
Q RR (C)
IRR (A)
3.0 2.5 2.0 1.5 1.0 0.5 0.0 50 30 10 20A 5.0
30 25 20 15 10 0 200 400 600 800 1000
0
200
400
600
800
1000
1200
diF /dt (A/s)
diF /dt (A/s)
Fig. 19- Typical Diode I RR vs. diF/dt VCC= 600V; VGE= 15V; ICE= 40A; TJ = 125C
Fig. 20 - Typical Diode QRR VCC= 600V; VGE= 15V;TJ = 125C
8
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40MT120UH
Bulletin I27126 rev. B 10/02
10000
Cies
Capacitance (pF)
1000
Coes
100
Cres
10 0 20 40 60 80 100
VCE (V)
Fig. 21- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
16 14 12 10 600V
VGE (V)
8 6 4 2 0 0 100 200 300 400 500 Q G , Total Gate Charge (nC)
Fig. 22 - Typical Gate Charge vs. VGE ICE = 5.0A; L = 600H
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40MT120UH
I27126 rev. C 02/03
1
Thermal Response ( Z thJC )
0.1
0.01
D = 0.50 0.20 0.10 0.05 0.02 0.01
J J 1 R1 R1 2 R2 R2 R3 R3 C 2 3 3
0.001
1
Ri (C/W) i (sec) 0.043 0.001214 0.105 0.044929 0.123 1.1977
Ci= i/Ri Ci= i/Ri
0.0001
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 0.01 0.1 1 10
1E-005 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20 0.10 0.05 0.02 0.01
J J 1 R1 R1 2 R2 R2 C 1 2
Ri (C/W) i (sec) 0.024 0.00008 0.549 0.000098
0.01
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 0.01
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
10
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40MT120UH
Bulletin I27126 rev. B 10/02
L
L
0
DUT 1K
VCC
80 V Rg
DUT
1000V
Fig. CT.1 - Gate Charge Circuit (turn-off)
Fig. CT.2 - RBSOA Circuit
diode clamp / DUT
Driver
D C
L
900V
- 5V DUT / DRIVER
Rg
DUT
VCC
Fig. CT.3 - S.C. SOA Circuit
Fig. CT.4 - Switching Loss Circuit
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40MT120UH
I27126 rev. C 02/03
Outline Table
Electrical Circuit
Resistance in ohms
Dimensions in millimetres Note: unused terminals are not assembled in the package
12
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40MT120UH
Bulletin I27126 rev. B 10/02
Ordering Information Table
Device Code
40
1
MT 120
2 3
U
4
H
5
6
1 2 3 4 5 6
-
Current rating Essential Part Number Voltage code Speed/ Type Special Option
(40 = 40A) (120 = 1200V) (U = Ultra Fast IGBT)
Circuit Configuration (H = Half Bridge) Empty = no special option T = Thermistor
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/02
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