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| Ordering number : ENN7766 2SK3706 2SK3706 Features * * * * N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 100 20 12 48 2.0 20 150 --55 to +150 18 12 Unit V V A A W W C C mJ A *1 VDD=20V, L=200H, IAV=12A *2 L200H, single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=100V, VGS=0 VGS= 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V ID=6A, VGS=4V Ratings min 100 1 10 1.2 7 10 100 120 130 160 2.6 typ max Unit V A A V S m m Marking : K3706 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73004QA TS IM TA-101121 No.7766-1/5 2SK3706 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=50V, VGS=10V, ID=12A VDS=50V, VGS=10V, ID=12A VDS=50V, VGS=10V, ID=12A IS=12A, VGS=0 Ratings min typ 880 80 55 11.5 16 97 45 24 3.2 5.5 0.92 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm 2063A 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 12 3 2.55 2.4 0.7 2.55 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML 2.55 2.55 Switching Time Test Circuit VIN 10V 0V VIN ID=6A RL=8.33 VDD=50V Unclamped Inductive Test Circuit L 50 DUT D PW=10s D.C.1% VOUT G 10V 0V 50 VDD 2SK3706 P.G 50 S No.7766-2/5 2SK3706 20 18 16 ID -- VDS Tc=25C 8V 25 ID -- VGS Tc= --25 2 C 5C VDS=10V 6V 4V 20 Drain Current, ID -- A 14 12 10 8 6 4 2 0 0 0.5 1.0 Drain Current, ID -- A V 10 15 10 25 C 0 1.5 2.0 2.5 3.0 IT07021 300 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Drain-to-Source Voltage, VDS -- V 180 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V --25 C 5 Tc= VGS=3V 75 C 75 C IT07022 125 150 IT07024 2 3 IT07026 RDS(on) -- Tc ID=6A Static Drain-to-Source On-State Resistance, RDS(on) -- m 160 Static Drain-to-Source On-State Resistance, RDS(on) -- m 250 140 200 120 Tc=75C 25C 150 100 , VG 6A I D= 4V S= 80 --25C 100 VG 6A, I D= 10 S= V 60 40 2 3 4 5 6 7 8 9 10 IT07023 50 0 --50 --25 0 25 50 75 100 Gate-to-Source Voltage, VGS -- V 2.5 Case Temperature, Tc -- C 5 VGS(off) -- Tc yfs -- ID Forward Transfer Admittance, yfs -- S VDS=10V ID=1mA Cutoff Voltage, VGS(off) -- V 2.0 VDS=10V 3 2 25 10 7 5 3 2 C 1.5 = Tc 5 --2 C 75 C 1.0 0.5 --50 --25 0 25 50 75 100 125 150 1.0 2 3 5 7 Case Temperature, Tc -- C 5 3 2 1.0 2 3 5 7 10 IT07025 3 IF -- VSD VGS=0 Switching Time, SW Time -- ns Drain Current, ID -- A SW Time -- ID td (off) 2 VDD=50V VGS=10V Forward Drain Current, IF -- A 10 7 5 3 2 1.0 7 5 100 7 5 3 2 tf Tc=7 5C 25C --25C 3 2 0.1 7 5 3 2 0.01 0 0.3 tr 10 7 5 3 0.1 td(on) 0.6 0.9 1.2 1.5 IT07027 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Diode Forward Voltage, VSD -- V Drain Current, ID -- A IT07028 No.7766-3/5 2SK3706 3 2 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS -- V 10 9 VGS -- Qg VDS=50V ID=12A 1000 Ciss 8 7 6 5 4 3 2 1 0 Ciss, Coss, Crss -- pF 7 5 3 2 100 7 5 3 2 0 5 10 Coss Crss 15 20 25 30 IT07029 2.5 0 5 10 15 20 25 IT07030 Drain-to-Source Voltage, VDS -- V 7 5 3 2 Total Gate Charge, Qg -- nC ASO PD -- Ta Allowable Power Dissipation, PD -- W IDP=48A Drain Current, ID -- A ID=12A <10s 10 s 10 0 s 2.0 10 7 5 3 2 1.0 7 5 3 2 D C op 1 10 0m 0m s s er at io n 1m s 1.5 Operation in this area is limited by RDS(on). 1.0 0.5 0.1 0.1 Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 0 2 5 7 100 IT07031 V 0 20 40 60 80 100 120 140 160 Drain-to-Source Voltage, VDS -25 Ambient Temperature, Ta -- C IT07032 PD -- Tc Allowable Power Dissipation, PD -- W 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT07033 No.7766-4/5 2SK3706 Note on usage : Since the 2SK3706 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2004. Specifications and information herein are subject to change without notice. PS No.7766-5/5 |
Price & Availability of 2SK3706
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