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| 2SK3085 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) 2SK3085 Chopper Regulator, DC-DC Converter and Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 3.5 14 75 227 3.5 7.5 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA TO-220AB SC-46 2-10P1B Weight: 2.0 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.67 83.3 Unit C/W C/W Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C, L = 28.8 mH, RG = 25 W, IAR = 3.5 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-08-09 2SK3085 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Gate -source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD ~ 400 V, VGS = 10 V, ID = 3.5 A Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr ton VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 mA, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1.8 A VDS = 10 V, ID = 1.8 A Min 3/4 30 3/4 600 2.0 3/4 2.0 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 1.7 3.0 800 6 65 15 50 15 85 20 10 10 Max 10 3/4 100 3/4 4.0 2.2 3/4 3/4 3/4 pF Unit mA V mA V V W S 3/4 10 V VGS 0V 50 9 ID = 1.8 A 3/4 3/4 3/4 ns 3/4 VOUT 3/4 3/4 3/4 3/4 3/4 3/4 RL = 111 W 3/4 3/4 3/4 3/4 3/4 nC Duty < 1%, tw = 10 ms = VDD ~ 220 V - Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 3.5 A, VGS = 0 V IDR = 3.5 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 400 2.6 Max 3.5 14 -1.7 3/4 3/4 Unit A A V ns mC Marking K3085 Lot Number Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-08-09 2SK3085 ID - VDS 2.0 Common source Tc = 25 C Pulse test 8 1.2 4.8 0.8 4.6 0.4 4.4 4.2 0 VGS = 4 V 0 1 2 3 4 5 0 10 15 7 6 5 4 5 Common source Tc = 25 C 10 Pulse test ID - VDS 15 7 6 8 1.6 (A) ID ID (A) 5.5 3 5.5 Drain current Drain current 2 5 1 4.5 VGS = 4 V 0 4 8 12 16 20 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VDS 4 Common source VDS = 20 V Pulse test 20 VDS - VGS Common source Tc = 25 C Pulse test Tc = -55 C 25 (V) VDS Drain-source voltage 16 ID (A) 3 12 Drain current 2 100 8 ID = 3.5 A 1 4 1.8 1 0 0 2 4 6 8 10 0 0 4 8 12 16 20 24 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 10 Common source VDS = 20 V Pulse test 10 Common source Tc = 25 C Pulse test RDS (ON) - ID (S) iYfsi Forward transfer admittance 3 100 Drain-source on resistance RDS (ON) (W) 5 Tc = -55 C 25 5 3 VGS = 10, 15 V 1 1 0.5 0.3 0.1 0.5 0.3 0.1 0.3 0.5 1 3 5 10 0.3 0.5 1 3 5 10 Drain current ID (A) Drain current ID (A) 3 2002-08-09 2SK3085 RDS (ON) - Tc 10 Common source VGS = 10 V Pulse test 30 Common source Tc = 25 C Pulse test IDR - VDS (A) Drain reverse current IDR Drain-source on resistance RDS (ON) (W) 8 10 5 3 6 4 ID = 2.5 A 1 1 0.5 0.3 3 10 VGS = 0, -1 V 2 0 -80 -40 0 40 80 120 160 0 1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 3000 5 Vth - Tc Common source VDS = 10 V ID = 1 mA Pulse test Gate threshold voltage Vth (V) 1000 500 300 100 50 30 Common source 10 VGS = 0 V f = 1 MHz Tc = 25 C 3 5 10 30 Ciss 4 (pF) 3 Capacitance C Coss 2 1 Crss 50 100 0 -80 -40 0 40 80 120 160 3 1 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 100 (W) Drain power dissipation PD 80 60 40 20 0 0 40 80 120 160 200 Case temperature Tc (C) 4 2002-08-09 2SK3085 rth - tw 3 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 0.5 0.3 Duty = 0.5 0.2 0.1 0.1 0.05 0.03 0.01 0.01 0.005 0.003 10 m 100 m 1m 10 m 100 m Duty = t/T Rth (ch-c) = 1.67C/W 1 10 0.05 0.02 Single pulse PDM t T Pulse width tw (S) Safe operating area 100 250 50 30 ID max (pulse) * 10 100 ms * EAS - Tch (mJ) EAS Avalanche energy ID max (continuous) 1 ms * DC operation Tc = 25C 200 150 (A) 5 3 100 Drain current ID 1 0.5 0.3 50 0 25 50 75 100 125 150 0.1 * Single nonrepetitive pulse 0.05 0.03 Tc = 25C Curves must be derated linearly with increase in temperature. VDSS max 0.01 1 3 10 30 100 300 1000 Channel temperature Tch (C) 15 V -15 V BVDSS IAR VDD VDS Drain-source voltage VDS (V) Test circuit RG = 25 W VDD = 90 V, L = 28.8 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB 2 - VDD / e VDSS o 5 2002-08-09 2SK3085 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-08-09 |
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