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| 2SD2318 Transistors High-current gain Power Transistor (60V, 3A) 2SD2318 Features 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) 3) Complements the 2SB1639. External dimensions (Unit : mm) 0.75 1.5 5.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 5.1 6.5 C0.5 1.0 0.5 0.5 Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Single pulse PW=100ms 1.5 2.5 9.5 Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 80 60 6 3 4.5 1 15 150 -55 to +150 Unit V V V A A(Pulse) W W(TC=25C) C C ROHM : CPT3 EIAJ : SC-63 Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SD2318 CPT3 UV TL 2500 Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob Min. 80 60 6 - - - - 560 - - Typ. - - - - - - - - 50 60 Max. - - - 100 100 1.0 1.5 1800 - - Unit V V V A A V V - MHz pF Conditions IC=50A IC=1mA IE=50A VCB=80V VEB=6V IC/IB=2A/0.05A IC/IB=2A/0.05A VCE/IC=4V/0.5A VCE=5V, IE=-0.2A, f=10MHz VCB=10V, IE=0A, f=1MHz 2.3 0.8Min. (1) Base (2) Collector (3) Emitter Rev.A 1/2 2SD2318 Transistors Electrical characteristics curves 3.0 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 50mA 45mA 2.5 40mA 2.0 15 m A 10 mA 10 5 2 0 VCE=4V 10000 5000 DC CURRENT GAIN : hFE Ta=25C 2000 1000 500 200 100 50 20 IB=5mA 20mA VCE=5V 4V 1.0 0.5 0 0 30mA 35mA 0.2 0.1 0.05 0.02 Ta=25C 1 2 3 4 5 6 0.01 0 Ta=10 0 25mA -25C 1.5 C 25C 0.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR TO EMITTER VOLTAGE : VBE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.1 Grounded emitter output characteristics Fig.2 Grounded emitter propagation characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=4V Ta=25C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) 10000 5000 10 5 2 0 0.5 0.2 0.1 0.05 0.02 0.01 0.010.02 0.05 0.1 0.2 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.010.02 0.05 0.1 0.2 25C Ta=-25C 25C IC/IB=40 DC CURRENT GAIN : hFE 2000 1000 500 200 100 50 20 Ta=100C VBE(sat) 25C -25C IC/IB=50 40 VCE(sat) 100C -25C 10 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 0.5 1 2 5 10 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage -Collector current TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) 500 200 100 50 20 10 5 2 1 -0.001 Ta=25C VCE=5V COLLECTOR OUTPUT CAPACITANCE : Cob(pF) 1000 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 Ta=25C f=1MHz IE=0A 5 2 1 0.5 IC Max (Pulse) Pw =1 ms Pw =1 10 0m s 0m s DC 0.2 0.1 0.05 0.02 -0.01 -0.1 -1 0.5 1 2 5 10 20 50 100 0.01 0.1 0.2 Ta=25C Single nonrepetitive pulse 0.5 1 2 5 10 20 50 100 ENITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Resistance ratio vs. collector current Fig.8 Collector output capacitance vs. collector-base voltage Fig.9 Safe operating area Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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