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| UTC 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION * medium power amplifier applications * strobo flash applications 1 FEATURES *Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA) TO-92SP 1.EMITTER 2.COLLECTOR 3.BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO RATING UNIT V V V A A mW C C 15 10 7 5(DC) Collector Current Ic 9(PLUSED) Collector Power Dissipation Pc(Note 1) 550 Junction Temperature Tj 150 Storage Temperature Tstg -55 ~ +150 Note 1: When a device is mounted on a glass epoxy board (35 mm*30 mm*1mm) ELECTRICAL CHARACTERISTICS (Ta=25C,unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain SYMBOL BVCEO ICBO IEBO hFE 1 (Note 2) hFE2 (Note 2) TEST CONDITIONS IC =1mA, IB= 0 VCB=15V, IE= 0 VEB= 5V, Ic=0 VCE=1.5V,Ic=0.5A VCE=1.5V,Ic=2A MIN 10 TYP MAX 0.1 0.1 700 UNIT V A A 450 320 170 Collector-Emitter Saturation Voltage Collector Output Capacitance Note 2: Pulse test hFE3 (Note 2) VCE=1.5V,Ic=5A VCE(sat) (note 2) Ic=3A,IB=60mA Cob VCB=10V, IE= 0, f=1MHz 0.27 25 V pF UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R216-002,B UTC 2SC5765 Ic-VCE NPN EPITAXIAL SILICON TRANSISTOR VCE(sat)-Ic Collector Emitter Saturation Voltage VCE(sat)(V) ELECTRICAL CHARACTERISTICS CURVES 5 4 10 3 2 1 0 1 60 30 20 Common Emitter Ta= 25 8 6 4 2 1 Common Emitter Ic/IB=50 Ta=100 Collector Current Ic (A) 0.1 Ta= 25 Ta= -25 0.01 0 IB=0mA 2.0 1.5 1.0 0.5 CE(V) Collector Emitter Voltage V hFE-Ic 0.001 0.01 0.1 1 Collector Current Ic (A) Ic-VBE 10 10000 5.0 Collector Current Ic (A) Common Emitter VCE=1.5V Ta=100 Common Emitter VCE=1.5V Ta=100 DC Current Gain hFE 4.0 1000 3.0 2.0 1.0 Ta= 25 Ta= 25 100 Ta= -25 Ta= -25 10 0.01 0.1 1 Collector Current Ic (A) Safe Operating Area 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base Emitter Voltage V BE(V) Pc-Ta 1.4 100 600 Collector Power Dissipation Pc (mW) when a device is mounted on a Glass epoxy board (35mm*30mm*1mm) Collector Current Ic (A) 10 Ic max(Pulsed) 1ms* Ic max (Continous) 400 1 t=100ms* DC Operation 0.1 *Single nonrepetitive 200 0.01 0.01 pulse Ta= 25 Curves must be derated linearly with increase in temperature VCEO max 100 0 0.1 1 10 Collector Emitter Voltage V CE(V) 0 150 50 100 () Ambient Temperature Ta UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R216-002,B UTC 2SC5765 10000 Transient thermal impedance rth ( /W) NPN EPITAXIAL SILICON TRANSISTOR rth-tw when a device is mounted on a Glass epoxy board (35mm*30mm*1mm) 1000 100 10 0.001 Single pulse 0.01 0.1 1 Pulse width tw (s) 10 100 1000 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R216-002,B |
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