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| 2SC3359S Transistors Power Transistor (80V, 0.3A) 2SC3359S Features 1) High breakdown voltage, BVCEO=80V 2) Low saturation voltage, typically VCE(sat) = 0.2V at IB=0.3A / 0.03A Electrical characteristics (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 80 80 5 0.3 0.3 150 -55 to +150 Unit V V V A W C C Absolute maximum ratings (Ta=25C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector outoff current Emitter outoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 80 80 5 - - - 120 50 - Typ. - - - - - 0.2 - 150 5 Max. - - - 0.5 0.5 0.5 390 - 8 Unit V V V A A Conditions IC=1mA IC=50A IE=50A VCB=80V VEB=4V V - MHz pF VC/ICB=0.3V/0.03A VCE=5V , IE= -0.01A , f=100MHz VCB=10V , IE=0A , f=1MHz VCE=3V, IC=0.1A Packaging specification and hFE Type Package hFE Code Basic orderin unit (pieces) 2SC3359S SPT QR TP 5000 Rev.A 1/2 2SC3359S Transistors Electrical characteristic curves 100 Ta=25 C 500 A 450 A 1000 500 hFE-DC CURRENT GAIN Ta=25 C 1000 500 hFE-DC CURRENT GAIN Ta=125 C IC-COLLECTOE CURRENT (mA) Ta=25 C VCE=5V 80 400 A 350 A 60 300 A 250 A 200 100 50 5V 3V VCE=10V 200 100 50 25 C -40 C 40 200 A 150 A 100 A 50 A IB=0 A 1V 20 20 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC-COLLECTOR CURRENT (mA) 20 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 0 1.0 2.0 3.0 4.0 5.0 500 50 100 200 500 1000 VCE-COLLECTOR-EMITTER VOLTAGE (V) IC-COLLECTOR CURRENT (mA) Fig.1 Typical output characteristics Fig.2 DC current gain vs. collector current Fig.3 DC current gain vs. collector current VBE(sat) BASE EMITTER SATURATION VOLTAGE (V) VBE(ON) BASE EMITTER SATURATION VOLTAGE (V) Ta=25 C IC / IB=10 1.8 1.6 1.4 1.2 1.0 Ta=-40 C Ta=25 C IC / IB=10 1.8 1.6 1.4 1.2 1.0 Ta=-40 C Ta=25 C VCE=5V VCE(sat) COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.3 0.2 0.8 0.6 25 C 0.8 25 C 0.1 Ta=125 C 0.6 0.4 0.2 0 1 2 5 125 C 125 C 25 C 0.4 0.2 0 1 2 5 10 20 50 100 200 500 1000 -40 C 0 1 2 5 10 20 50 100 200 500 1000 10 20 50 100 200 500 1000 IC-COLLECTOR CURRENT (mA) IC-COLLECTOR CURRENT (mA) IC-COLLECTOR CURRENT (mA) Fig.4 Collector emitter saturation voltage vs. collector current Fig.5 Base emitter saturation voltage vs. collector current Fig.6 Base emitter 'ON' voltage vs. collector ccurrent 100 50 CAPACITANCE (pF) Cib Ta=25 C f=1MZ 1000 Ta=25 C VCE=5V CURRENT GAIN-BANDWIDTH PROFUCT (MHz) 5 10 20 50 500 20 10 5 Cob 200 100 50 2 1 0.5 1 2 20 10 1 2 5 10 20 50 100 200 500 1000 REVERSE BIAS VOLTAGE (V) IC-COLLECTOR CURRENT (mA) Fig.7 Capacitance vs. reverse bias voltage Fig.8 Current gain-bandwidth product vs. collector current Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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