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| 2N6782LCC4 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL POWER MOSFET 2.16 (0.085) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 7.62 (0.300) 7.12 (0.280) 17 18 1 2 0.76 (0.030) 0.51 (0.020) 10 9 8 VDSS ID(cont) RDS(on) FEATURES 100V 3.1A W 0.6W 7 6 5 4 3 1.65 (0.065) 1.40 (0.055) 0.33 (0.013) Rad. 0.08 (0.003) * SURFACE MOUNT * SMALL FOORPRINT * HERMETICALLY SEALED * DYNAMIC dv/dt RATING 1.39 (0.055) 1.15 (0.045) 0.43 (0.017) 0.18 (0.007 Rad. LCC4 MOSFET GATE DRAIN SOURCE * AVALANCHE ENERGY RATING PINS 4,5 1,2,15,16,17,18 6,7,8,9,10,11,12,13 TRANSISTOR BASE COLLECTOR EMITTER * SIMPLE DRIVE REQUIREMENTS * LIGHTWEIGHT ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Surface Temperature ( for 5 sec). Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 50V , L 570mH , RG = 25W , Peak IL = 14A , Starting TJ = 25C 3) @ ISD 14A , di/dt 140A/ms , VDD BVDSS , TJ 150C , Suggested RG = 7.5W 2 20V (VGS = 10V , Tcase = 25C) (VGS = 10V , Tcase = 100C) 3.1A 2.0A 12A 11W 0.09W/C 68mJ 5.5V/ns -55 to +150C 300C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 10/99 2N6782LCC4 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain - Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage Static Drain - Source On-State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1mA Reference to 25C ID = 1mA VGS = 10V ID = 2A VGS = 10V ID = 3.1A VDS = VGS ID = 250mA VDS 15V IDS = 2A VGS = 0 VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 3.1A VDS = 0.5BVDSS VDD = 50V ID = 3.1A RG = 7.5W Min. 100 Typ. Max. Unit V 0.10 0.6 0.69 4 25 250 100 -100 180 82 15 4.1 0.4 1.4 6.5 1.6 3.5 15 25 25 20 3.1 12 1.5 180 2.0 Negligible 11 27 V / C W V S (E) 2 0.8 mA nA pF nC ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS = 3.1A TJ = 25C Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time IF = 7.4A TJ = 25C Reverse Recovery Charge 1 di / dt 100A/ms VDD 50V Forward Turn-On Time THERMAL CHARACTERISTICS A V ns mC RqJC Thermal Resistance Junction - Case RqJPC Thermal Resistance Junction - PC Board Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature. C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 10/99 |
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