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| Bulletin PD-20708 rev. G 07/04 10BQ030 SCHOTTKY RECTIFIER 1 Amp IF(AV) = 1 Amp VR = 30V Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp= 5 ms sine VF TJ @ 1.0Apk, TJ= 125C range Description/ Features Units A V A V C The 10BQ030 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection. Small foot print, surface mountable Very low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability 10BQ030 1.0 30 430 0.30 - 55 to 150 Case Styles 10BQ030 SMB www.irf.com 1 10BQ030 Bulletin PD-20708 rev. G 07/04 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) 10BQ030 30 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 6 Non-Repetitive Avalanche Energy Repetitive Avalanche Current 10BQ 1.0 430 90 3.0 1.0 Units A Conditions 5s Sine or 3s Rect. pulse 50% duty cycle @ TL = 106 C, rectangular wave form. Following any rated load condition and 10ms Sine or 6ms Rect. pulse with rated VRRM applied Current decaying linearly to zero in 1 sec Frequency limited by TJ max. Va = 1.5 x Vr typical mJ A TJ = 25 C, IAS = 1A, L = 6mH Electrical Specifications Parameters VFM VFM Max. Forward Voltage Drop Max. Forward Voltage Drop (1) (1) 10BQ 0.420 0.470 0.300 0.370 0.5 Units V V V V mA mA mA pF nH V/s @ 1A @ 2A @ 1A @ 2A TJ = 25 C TJ = 100 C TJ = 125 C Conditions TJ = 25 C TJ = 125 C IRM CT LS Max. Reverse Leakage Current (1) 5.0 15 VR = rated VR Max. Junction Capacitance Typical Series Inductance (Rated VR) 200 2.0 10000 VR = 5VDC, (test signal range 100KHz to 1Mhz) 25C Measured lead to lead 5mm from package body dv/dt Max. Voltage Rate of Change (1) Pulse Width < 300s, Duty Cycle < 2% Thermal-Mechanical Specifications Parameters TJ Tstg Max. Storage Temperature Range 10BQ - 55 to 150 25 80 Units C C C/W DC operation C/W Conditions Max. Junction Temperature Range (*) - 55 to 150 RthJL Max. Thermal Resistance Junction to Lead (**) RthJA Max. Thermal Resistance Junction to Ambient wt Approximate Weight Case Style Device Marking (*) dPtot dTj < 1 Rth( j-a) 0.10 (0.003) g (oz.) SMB IR1E Similar DO-214AA thermal runaway condition for a diode on its own heatsink (**) Mounted 1 inch square PCB 2 www.irf.com 10BQ030 Bulletin PD-20708 rev. G 07/04 10 10 R evers Current - I R (mA) e TJ = 125C 1 100C 75C 50C 0.01 25C 0.001 0.1 Instantaneous Forward Current - I F (A) 0.0001 0 10 20 30 TJ = 125C TJ = 25C 1 Reverse Voltage - VR (V) Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage 1000 Junc tion Capa citance - C T (pF ) T = 25C J 100 0.1 0 0.2 0.4 0.6 0.8 Forward Voltage Drop - VFM (V) 10 Fig. 1 - Maximum Forward Voltage Drop Characteristics 0 10 20 30 Reverse Voltage - V (V) R Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage www.irf.com 3 10BQ030 Bulletin PD-20708 rev. G 07/04 130 Allowable Case T emperature - (C) DC 120 0.5 Average Power Los - (Watts) s D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC RMSLimit 0.2 0.4 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 0.3 100 S quare wave (D = 0.50) 80% Rated VR applied see note (2) 0.1 90 0 0.4 0.8 1.2 1.6 0 0 0.4 0.8 1.2 1.6 Average Forward Current - I F(AV) (A) Average Forward Current - I F(AV) (A) Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current Non-R epetitive S urge Current - I FSM (A) 1000 100 At Any R ated Load Condition And With Rated VRRM Applied Following S urge 10 10 100 1000 10000 S quare Wave Pulse Duration - t p (microsec) Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 10BQ030 Bulletin PD-20708 rev. G 07/04 Outline Table Device Marking: IR1E CATHODE ANODE 2.15 (.085) 1.80 (.071) 3.80 (.150) 3.30 (.130) 1 2 4.70 (.185) 4.10 (.161) 1 POLARITY 2 PART NUMBER 2.40 (.094) 1.90 (.075) 1.30 (.051) 0.76 (.030) 0.30 (.012) 0.15 (.006) 5.60 (.220) 5.00 (.197) 2.5 TYP. (.098 TYP.) SOLDERING PAD 2.0 TYP. (.079 TYP.) 4.2 (.165) 4.0 (.157) Outline SMB Dimensions in millimeters and (inches) For recommended footprint and soldering techniques refer to application note #AN-994 Marking & Identification Each device has 2 rows for identification. The first row designates the device as manufactured by International Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID. IR1E VOLTAGE CURRENT IR LOGO YYWWX SITE ID WEEK 2nd digit of the YEAR "Y" = 1st digit of the YEAR "standard product" "P" = "Lead-Free" www.irf.com 5 10BQ030 Bulletin PD-20708 rev. G 07/04 Tape & Reel Information Dimensions in millimetres and (inches) Ordering Information Table Device Code 10 1 B 2 Q 3 030 4 TR 5 6 1 2 3 4 5 6 - Current Rating B = Single Lead Diode Q = Schottky Q Series Voltage Rating (030 = 30V) none = Box (1000 pieces) TR = Tape & Reel (3000 pieces) none = Standard Production PbF = Lead-Free Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 07/04 6 www.irf.com |
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