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| MCC Features * * * omponents 21201 Itasca Street Chatsworth !"# $ % !"# RB421D Low VF ( VF=0.45V Typ at 100mA ) High reliability Small surface mounting type ( SMD3 ) 0.1 Amp Surface Mount Schottky Barrier Diode Mechanical Data * * * Case :SOT-346,Molded Plastic Low power rectification Silicon epitaxial planar L A 40 Volts SOT-346 Maximum Ratings * * Operating Junction Temperature: 125C Storage Temperature: -40C to +125C MCC Catalog Number RB421D Device Marking Maximum Recurrent Peak Reverse Voltage 40V Maximum RMS Voltage 28V Maximum DC Blocking Voltage 40V S 2 3 1 B 3 CATHODE 2 ANODE D G C H DIMENSIONS INCHES DIM A B C D G H J K L S MIN .106 .051 .039 .014 .067 .000 .004 .008 .049 .089 MAX .122 .067 .051 .020 .091 .004 .010 .024 .065 .118 MIN 2.70 1.30 1.00 0.35 1.70 0.00 0.10 0.20 1.25 2.25 MM MAX 3.10 1.70 1.30 0.50 2.30 0.10 0.26 0.60 1.65 3.00 NOTE J K D3C Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Forward Voltage RB421D Maximum DC Reverse Current At Rated DC Blocking Voltage IF(AV) IFSM 0.1A 1.0A TA = 25C 8.3ms, half sine Suggested Solder Pad Layout .031 .800 .039 1.000 0.098-0.118 2.5-3.0 .094 2.400 inches mm 0.55V VF 0.34V 30 I FM = 100mA IFM = 10mA TA = 25C TA = 25C VR=10V IR .037 .950 .037 .950 www.mccsemi.com MCC RB421D !Electrical characteristic curves (Ta = 25C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 1 10m Typ. pulse measurement Typ. pulse measurement Ta=125C 100 REVERSE CURRENT : IR (A) FORWARD CURRENT : IF (A) 100m 1m 10 Ta =1 25 C 75 C 25 C 10m 100 75C -2 5C 1m 10 25C 1 100 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0 5 10 15 20 25 30 35 0.1 0 5 10 15 20 25 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 100 Io CURRENT (%) 80 60 40 20 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (C) Fig. 4 Derating curve (mounting on glass epoxy PCBs) www.mccsemi.com |
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