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| RB085B-90 Diodes Schottky barrier diode RB085B-90 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 6.50.2 5.10.2 0.1 C0.5 1.50.3 2.30.2 0.1 0.50.1 1.5 Construction Silicon epitaxial planar 0.75 0.9 1 2 3 0.650.1 2.5 9.50.6 CPD 0.50.1 1.00.2 2.3 2.3 2.30.2 2.30.2 Structure ROHM : CPD JEITA : SC-63 Manufacture Date Taping dimensions (Unit : mm) 4.00.1 2.00.05 8.00.1 1.550.1 0 2.50.1 0.40.1 7.50.05 10.10.1 6.80.1 8.00.1 3.00.1 00.5 13.50.2 10.10.1 2.70.2 TL Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) Average rectified forward current*1 Io Forward current surge peak 60Hz1cyc*1 IFSM Junction temperature Tj Storage temperature Tstg Limits 90 90 10 45 150 -40 to +150 Unit V V A A (*1)Rating of per diode : Io/2 Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.83 150 6.0 Unit V A /W Conditions IF=5.0A VR=90V junction to case 16.00.2 3.0 2.0 Features 1) Power mold type. (CPD) 2) Low VF 3) High reliability 1.6 1.6 5.50.3 0.1 6.0 1/3 RB085B-90 Diodes Electrical characteristic curves 10 Ta=150 10000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1 Ta=125 Ta=75 0.1 Ta=25 Ta=-25 1000 100 Ta=25 10 1 0.1 0.01 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 90 1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 Ta=-25 100000 Ta=150 Ta=125 Ta=75 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 f=1MHz 100 10 0.01 0.001 790 Ta=25 Ta=25 IF=10A IF=5A n=30pcs 200 180 REVERSE CURRENT:IR(uA) 160 140 120 100 80 60 40 20 0 AVE:14.3uA Ta=25 VR=90V n=30pcs 550 540 530 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 520 510 500 490 480 470 460 450 AVE:498.5pF Ta=25 f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 780 n=30pcs 770 760 750 AVE:715.7mV AVE:766.6mV :1.7301mV 740 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 IFSM DISRESION MAP AVE:136.0A 1cyc 8.3ms 30 25 20 15 10 5 AVE:7.40ns 0 trr DISPERSION MAP Mounted on epoxy board Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 100 Ifsm 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 100 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) IM=100mA IF=5A 15 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 1ms time Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 10 D=1/2 DC Sin(180) 300us 10 Rth(j-c) 1 100 5 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 5 10 15 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 20 2/3 RB085B-90 Diodes 10 30 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0A 0V 20 DC D=1/2 10 T Io t VR D=t/T VR=45V Tj=150 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 30 0A 0V 20 DC D=1/2 10 Sin(180) T Io t VR D=t/T VR=45V Tj=150 8 REVERSE POWER DISSIPATION:PR (W) 6 Sin(180) 4 D=1/2 DC 2 Sin(180) 0 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 150 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 150 30 No break at 30kV 25 ELECTROSTATIC DDISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0 ESD DISPERSION MAP C=100pF R=1.5k AVE:5.30kV 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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