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| DSI 45 Rectifier Diode VRSM V 900 1300 1700 VRRM V 800 1200 1600 DSI 45-08A DSI 45-12A DSI 45-16A Type VRRM = 800-1600 V IF(AV)M = 48 A A C TO-247 AD Version A C A C (TAB) ISOPLUS 247TM Version AR C A TAB DSI 45-16AR A = Anode, C = Cathode Symbol IF(AV)M IFSM Conditions TC = 105C; 180 sine TVJ = 45C; VR = 0 V; TVJ = 150C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 48 475 520 380 420 1120 1120 720 720 -40...+150 150 -40...+150 A A A A A A2s A2 s A2s A2 s C C C Nm V~ Features * International standard package * Planar glassivated chips * Version AR isolated and UL registered E153432 * Epoxy meets UL 94V-0 Applications * * * * I2t TVJ = 45C; VR = 0 V; TVJ = 150C; VR = 0 V; Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies TVJ TVJM Tstg Md * VISOL ** mounting torque 50/60 Hz, RMS, t = 1 minute, leads-to-tab Advantages * * * * 0.8...1.2 2500 Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Dimensions in mm (1 mm = 0.0394") Weight typical 6 g * Verson A only; ** Version AR only Symbol IR VF VT0 rT RthJC RthCH Conditions TVJ = TVJM; VR = VRRM IF = 40 A; TVJ = 25C For power-loss calculations only TVJ = TVJM DC current typical Characteristic Values 3 1.18 0.8 8 0.55 0.2 mA V V m K/W K/W Dim. A B C D* E F G H J K L M N IXYS reserves the right to change limits, test conditions and dimensions. Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 2.2 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.59 TM Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 420 Data according to IEC 60747 * ISOPLUS 247 without hole (c) 2004 IXYS All rights reserved 1-2 DSI 45 70 A 60 IF 50 40 30 20 100 10 0 0.0 0 0.001 102 0.01 0.1 t s 1 1 2 3 4 5 6 7 8 910 ms t 500 A 50Hz, 80% VRRM 104 As I2t 2 VR = 0 V TVJ=150C TVJ= 25C 400 IFSM TVJ = 45C 300 103 200 TVJ = 45C TVJ = 150C TVJ = 150C 0.4 0.8 VF 1.2 V 1.6 Fig. 1 Forward current versus voltage drop per diode 100 W 80 Ptot 60 Fig. 2 Surge overload current Fig. 3 I2t versus time per diode 50 RthHA : 0.5 K/W 1.0 K/W 1.5K/W 2.0 K/W 3.0 K/W 4.0 K/W 6.0 K/W A 40 IF(AV)M 30 40 20 20 10 0 0 10 20 30 Id(AV)M 40 A 0 20 40 60 80 100 120 140 C Tamb 0 0 20 40 60 80 100 120 140 C TC Fig. 4 0.6 Power dissipation versus direct output current and ambient temperature, sine 180 Fig. 5 Max. forward current versus case temperature K/W ZthJC 0.4 Constants for ZthJC calculation: 0.2 i 1 2 3 4 Rthi (K/W) 0.1633 0.2517 0.0933 0.04167 ti (s) 0.016 0.118 0.588 2.6 0.0 0.001 DSI45 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 2-2 420 |
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