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| Datasheet File OCR Text: |
| Central TM PROCESS Semiconductor Corp. Fast Recovery Rectifier CPD25 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 87 x 87 MILS 10.6 MILS 69.5 x 69.5 MILS Au - 5,000A Au - 2,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 1,490 PRINCIPAL DEVICE TYPES 1N5185 thru 1N5188 1N5415 thru 1N5420 The Typical Electrical Characteristics data for this chip is currently being revised. For the latest updated data for this Chip Process, please visit our website at: BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com www.centralsemi.com/chip R1 (1-August 2002) |
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