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CMPD7000 DUAL SILICON SWITCHING DIODE SERIES CONNECTION Central DESCRIPTION: TM Semiconductor Corp. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VRRM IO IFM PD TJ,Tstg JA The CENTRAL SEMICONDUCTOR CMPD7000 type is an ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded surface mount package, connected in a series configuration, designed for high speed switching applications. Marking Code is C5C. Peak Repetitive Reverse Voltage Average Forward Current Peak Forward Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 100 200 500 350 -65 to +150 357 UNITS V mA mA mW oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL BVR IR IR IR VF VF VF CT trr TEST CONDITIONS IR=100A VR=50V VR=50V, TA=125oC VR=100V IF=1.0mA IF=10mA IF=100mA VR=0, f=1 MHz IR=IF=10mA, RL=100, Rec. to 1.0mA MIN 100 300 100 500 0.70 0.82 1.10 1.5 4.0 TYP MAX UNITS V nA A nA V V V pF ns 0.55 0.67 0.75 2.0 144 All dimensions in inches (mm). C1 A2 A1, C2 R2 145 |
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