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| AP4565M Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Performance D2 D1 D2 D1 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 G2 S2 G1 S2 S1 G1 S1 40V 25m 7.6A -40V 33m -6.5A P-CH BVDSS RDS(ON) ID SO-8 SO-8 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 40 20 7.6 6 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -40 20 -6.5 -5.2 -30 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200422041 AP4565M N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. Max. Units 0.03 12 17 4 10 11 8 30 11 250 170 25 32 3 1 25 100 27 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS=10V, ID=7A VGS=4.5V, ID=5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=7A VDS=40V, VGS=0V VDS=32V, VGS=0V VGS=20V ID=7A VDS=32V VGS=4.5V VDS=20V ID=1A RG=3.3,VGS=10V RD=20 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1400 2240 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.7A, VGS=0V IS=7A, VGS=0V dI/dt=100A/s Min. - Typ. Max. Units 26 21 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge AP4565M P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -40 -1 - Typ. -0.03 10 20 4 10 11 7 67 43 250 190 Max. Units 33 42 -3 -1 -25 100 32 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-40V, VGS=0V VDS=-32V, VGS=0V VGS=20V ID=-6A VDS=-32V VGS=-4.5V VDS=-20V ID=-1A RG=3.3,VGS=-10V RD=20 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1440 2300 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-1.7A, VGS=0V IS=-6A, VGS=0V dI/dt=-100A/s Min. - Typ. 27 23 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on min. copper pad. AP4565M N-Channel 140 120 120 T A = 25 o C 10V 100 T A = 150 o C 10V ID , Drain Current (A) 100 ID , Drain Current (A) 7.0V 80 7.0V 80 60 60 40 5.0V 4.5V 40 5.0V 4.5V 20 20 V G =3.0V 0 0 1 2 3 4 5 6 0 V G =3.0V 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 27 1.6 ID=5A T A =25 o C Normalized RDS(ON) 23 1.4 ID=7A V G =10V RDS(ON) (m ) 1.2 1.0 19 0.8 15 0.6 3 5 7 9 11 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 8 1.3 Normalized VGS(th) (V) 6 1.1 IS(A) 4 T j =150 o C T j =25 o C 0.9 2 0.7 0 0 0.2 0.4 0.6 0.8 1 1.2 0.5 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4565M N-Channel 14 10000 f=1.0MHz 12 VGS , Gate to Source Voltage (V) I D =7A V DS =32V 10 8 C (pF) C iss 1000 6 4 C oss 2 C rss 100 0 10 20 30 40 1 5 9 13 17 21 25 29 0 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 100us 10 Normalized Thermal Response (Rthja) 0.2 1ms ID (A) 1 0.1 0.1 0.05 10ms 100ms 0.02 0.01 PDM 0.01 t Single Pulse 0.1 T A =25 C Single Pulse o 1s DC T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135o C/W 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off)tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP4565M P-Channel 100 100 T A = 25 C 80 o -10V -7.0V -ID , Drain Current (A) 80 T A = 150 o C -10V -7.0V -ID , Drain Current (A) 60 60 -5.0V -4.5V 40 40 -5.0V -4.5V 20 20 V G =-3.0V 0 0 1 2 3 4 5 6 7 8 9 0 0 1 2 3 4 5 6 V G =-3.0V 7 8 9 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 41 1.6 ID=-4A T A =25 C 37 o 1.4 I D = -6 A V G =-10V Normalized R DS(ON) RDS(ON) (m ) 1.2 33 1.0 29 0.8 25 0.6 3 5 7 9 11 -50 0 50 100 150 -V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 6 5 Normalized -VGS(th) (V) 1.2 1.5 4 -IS(A) 3 1.0 T j =150 o C 2 T j =25 o C 0.5 1 0 0 0.2 0.4 0.6 0.8 1 0.0 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4565M P-Channel f=1.0MHz 16 10000 -VGS , Gate to Source Voltage (V) I D =-6A V DS =-32V 12 8 4 C (pF) C iss 1000 C oss C rss 0 0.0 10.0 20.0 30.0 40.0 50.0 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 10 100us 1ms Normalized Thermal Response (Rthja) 0.2 0.1 0.1 0.05 -ID (A) 1 10ms 100ms 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135 C/W o 0.1 T A =25 o C Single Pulse 1s DC 1 10 100 0.01 0.001 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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