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| AP4563GM Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Fast Switching Performance RoHS Compliant D1 D2 D1 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 S2 40V 30m 6.7A -40V 36m -6A P-CH BVDSS RDS(ON) ID SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 40 20 6.7 5.3 50 2 0.016 -55 to 150 -55 to 150 P-channel -40 20 -6 -4.8 -50 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200617051-1/7 AP4563GM N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.03 9 10 4 5 10 5 23 7 165 90 1.8 Max. Units 30 40 3 1 25 100 16 2.7 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A VGS=4.5V, ID=4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=40V, VGS=0V VDS=32V, VGS=0V VGS=20V ID=6A VDS=30V VGS=4.5V VDS=20V ID=1A RG=3.3,VGS=10V RD=20 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1100 1760 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=6A, VGS=0V IS=6A, VGS=0V dI/dt=100A/s Min. - Typ. 21 15 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge 2/7 AP4563GM P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -40 -1 - Typ. -0.03 10 20 4 11 12 6 68 36 250 200 8 Max. Units 36 48 -3 -1 -25 100 32 12 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-40V, VGS=0V VDS=-32V, VGS=0V VGS=20V ID=-6A VDS=-30V VGS=-4.5V VDS=-20V ID=-1A RG=3.3,VGS=-10V RD=20 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1530 2500 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-6A, VGS=0V IS=-6A, VGS=0V dI/dt=-100A/s Min. - Typ. 29 28 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135/W when mounted on min. copper pad. 3/7 AP4563GM N-Channel 50 50 40 T A =25 C o ID , Drain Current (A) 30 ID , Drain Current (A) 10V 7.0V 5.0V 4.5V T A = 150 o C 40 10V 7.0V 5.0V 4.5V 30 20 20 V G =3.0V 10 10 V G =3.0V 0 0 2 4 6 0 0 2 4 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 1.8 I D =4A T A =25 C Normalized RDS(ON) 60 1.4 o I D =6A V G =10V RDS(ON0 (m ) 40 1.0 20 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 6 4 Normalized VGS(th) (V) 1.1 IS(A) T j =150 o C T j =25 o C 2 0.7 0 0 0.2 0.4 0.6 0.8 1 1.2 0.3 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4/7 AP4563GM N-Channel f=1.0MHz 12 10000 VGS , Gate to Source Voltage (V) ID=6A V DS = 30 V 9 1000 C iss 6 C (pF) C oss 100 3 C rss 0 0 4 8 12 16 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 10 100us 1ms 0.2 0.1 0.1 ID (A) 0.05 1 0.02 10ms T A =25 o C Single Pulse 100ms 1s 10s DC 10 100 0.01 PDM 0.01 t T Single Pulse 0.1 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135o C/W 0.01 0.1 1 0.001 0.0001 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 V DS =5V 40 VG QG T j =25 o C T j =150 o C ID , Drain Current (A) 30 4.5V QGS QGD 20 10 Charge 0 Q 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5/7 AP4563GM P-Channel 50 50 T A =25 C 40 o -ID , Drain Current (A) 30 -ID , Drain Current (A) - 10V - 7.0V - 5.0V - 4.5V T A = 150 o C 40 - 10V - 7.0V - 5.0V - 4.5V 30 20 20 V G = - 3.0V 10 10 V G = - 3.0V 0 0 2 4 6 8 10 0 0 2 4 6 8 10 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 1.8 I D = -4 A 80 T A =25 C Normalized RDS(ON) 1.4 o I D = -6 A V G = - 10V RDS(ON) (m) 60 1.0 40 20 2 4 6 8 10 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 6 4 Normalized -VGS(th) (V) 1.4 1.1 -IS(A) T j =150 o C 2 T j =25 o C 0.7 0 0.3 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6/7 AP4563GM P-Channel f=1.0MHz 12 10000 10 -VGS , Gate to Source Voltage (V) I D =-6A V DS =-30V 8 6 C (pF) C iss 1000 4 2 C oss C rss 100 0 10 20 30 40 0 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 0.2 100us 1ms 0.1 0.1 0.05 -ID (A) 1 10ms 100ms 0.02 0.01 PDM 0.01 t T Single Pulse 0.1 T A =25 C Single Pulse 0.01 0.1 1 10 o 1s DC Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W 0.001 100 0.0001 0.001 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 V DS =-5V 40 VG QG -ID , Drain Current (A) 30 -4.5V T j =25 o C T j =150 o C QGS QGD 20 10 Charge 0 Q 0 2 4 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7/7 |
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