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 AP4563GM
Pb Free Plating Product
Advanced Power Electronics Corp.
Simple Drive Requirement Fast Switching Performance RoHS Compliant
D1 D2 D1 D2
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH BVDSS RDS(ON) ID
G2 S2
40V 30m 6.7A -40V 36m -6A
P-CH BVDSS RDS(ON) ID
SO-8
S1
G1
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D1
D2
G1 S1
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating N-channel 40 20 6.7 5.3 50 2 0.016 -55 to 150 -55 to 150 P-channel -40 20 -6 -4.8 -50
Units V V A A A W W/
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit /W
Data and specifications subject to change without notice
200617051-1/7
AP4563GM
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
o
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 40 1 -
Typ. 0.03 9 10 4 5 10 5 23 7 165 90 1.8
Max. Units 30 40 3 1 25 100 16 2.7 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=6A VGS=4.5V, ID=4A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC)
o
VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=40V, VGS=0V VDS=32V, VGS=0V VGS=20V ID=6A VDS=30V VGS=4.5V VDS=20V ID=1A RG=3.3,VGS=10V RD=20 VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
1100 1760
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2
Test Conditions IS=6A, VGS=0V IS=6A, VGS=0V dI/dt=100A/s
Min. -
Typ. 21 15
Max. Units 1.3 V ns nC
Reverse Recovery Time Reverse Recovery Charge
2/7
AP4563GM
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C)
o o
Test Conditions VGS=0V, ID=-250uA
2
Min. -40 -1 -
Typ. -0.03 10 20 4 11 12 6 68 36 250 200 8
Max. Units 36 48 -3 -1 -25 100 32 12 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-40V, VGS=0V VDS=-32V, VGS=0V VGS=20V ID=-6A VDS=-30V VGS=-4.5V VDS=-20V ID=-1A RG=3.3,VGS=-10V RD=20 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
1530 2500
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2
Test Conditions IS=-6A, VGS=0V IS=-6A, VGS=0V dI/dt=-100A/s
Min. -
Typ. 29 28
Max. Units -1.3 V ns nC
Reverse Recovery Time Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135/W when mounted on min. copper pad.
3/7
AP4563GM
N-Channel
50 50
40
T A =25 C
o
ID , Drain Current (A)
30
ID , Drain Current (A)
10V 7.0V 5.0V 4.5V
T A = 150 o C
40
10V 7.0V 5.0V 4.5V
30
20
20
V G =3.0V
10
10
V G =3.0V
0 0 2 4 6 0 0 2 4 6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
1.8
I D =4A T A =25 C Normalized RDS(ON)
60
1.4
o
I D =6A V G =10V
RDS(ON0 (m )
40
1.0
20
2 4 6 8 10
0.6 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.5
6
4
Normalized VGS(th) (V)
1.1
IS(A)
T j =150 o C
T j =25 o C
2
0.7
0 0 0.2 0.4 0.6 0.8 1 1.2
0.3
-50
0
50
100
150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
4/7
AP4563GM
N-Channel
f=1.0MHz
12 10000
VGS , Gate to Source Voltage (V)
ID=6A V DS = 30 V
9 1000
C iss
6
C (pF)
C oss
100 3
C rss
0 0 4 8 12 16
10 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (Rthja)
10
100us 1ms
0.2
0.1
0.1
ID (A)
0.05
1
0.02
10ms T A =25 o C Single Pulse 100ms 1s 10s DC
10 100
0.01
PDM
0.01
t T
Single Pulse
0.1
Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135o C/W
0.01 0.1 1
0.001 0.0001 0.001 0.01 0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
V DS =5V
40
VG QG
T j =25 o C T j =150 o C
ID , Drain Current (A)
30
4.5V QGS QGD
20
10
Charge
0
Q
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
AP4563GM
P-Channel
50 50
T A =25 C
40
o
-ID , Drain Current (A)
30
-ID , Drain Current (A)
- 10V - 7.0V - 5.0V - 4.5V
T A = 150 o C
40
- 10V - 7.0V - 5.0V - 4.5V
30
20
20
V G = - 3.0V
10
10
V G = - 3.0V
0 0 2 4 6 8 10
0 0 2 4 6 8 10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.8
I D = -4 A
80
T A =25 C Normalized RDS(ON)
1.4
o
I D = -6 A V G = - 10V
RDS(ON) (m)
60
1.0
40
20
2 4 6 8 10
0.6 -50 0 50 100 150
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.5
6
4
Normalized -VGS(th) (V)
1.4
1.1
-IS(A)
T j =150 o C
2
T j =25 o C
0.7
0
0.3 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150
-V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
6/7
AP4563GM
P-Channel
f=1.0MHz
12 10000
10
-VGS , Gate to Source Voltage (V)
I D =-6A V DS =-30V
8
6
C (pF)
C iss
1000
4
2
C oss C rss
100
0 10 20 30 40
0
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
0.2
100us 1ms
0.1
0.1
0.05
-ID (A)
1
10ms 100ms
0.02
0.01
PDM
0.01
t T
Single Pulse
0.1
T A =25 C Single Pulse
0.01 0.1 1 10
o
1s DC
Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W
0.001 100 0.0001 0.001 0.01 0.1 1 10 100
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
V DS =-5V
40
VG QG
-ID , Drain Current (A)
30
-4.5V
T j =25 o C T j =150 o C
QGS
QGD
20
10
Charge
0
Q
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7/7


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