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| AP1333GU Pb Free Plating Product Advanced Power Electronics Corp. Simple Gate Drive Small Package Outline Fast Switching Speed RoHS Compliant SOT-323 G D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S -20V 800m -550mA Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating -20 12 -550 -440 2.5 0.35 0.003 -55 to 150 -55 to 150 Unit V V mA mA A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 360 Unit /W Data and specifications subject to change without notice 200822051-1/4 AP1333GU Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -20 -0.5 - Typ. 0.01 1 1.7 0.3 0.4 5 8 10 2 66 25 20 Max. 600 800 1000 -1.2 -1 -10 100 2.7 105.6 - Unit V V/ m m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-550mA VGS=-4.5V, ID=-500mA VGS=-2.5V, ID=-300mA VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-500mA VDS=-20V, VGS=0V VDS=-16V ,VGS=0V VGS=12V ID=-500mA VDS=-16V VGS=-4.5V VDS=-10V ID=-500mA RG=3.3,VGS=-5V RD=20 VGS=0V VDS=-10V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=-300mA, VGS=0V Min. - Typ. - Max. -1.2 Unit V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on FR4 board, t 10 sec. 2/4 AP1333GU 2.5 2.5 2.0 T A =25 C o -ID , Drain Current (A) - 5.0V - 4.5V - 3.5V -ID , Drain Current (A) T A = 150 o C 2.0 -5.0V -4.5V -3.5V 1.5 - 2.5V 1.5 -2.5V 1.0 1.0 V G = - 2.0V 0.5 0.5 V G = - 2.0V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1400 1.6 1200 I D = - 0. 3 A Normalized RDS(ON) T A =25 o C 1.4 I D = - 0. 5 A V G = - 4.5V 1000 RDS(ON) (m ) 1.2 800 1.0 600 0.8 400 200 0.6 1 4 7 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 1.0 0.8 1.5 0.6 -IS(A) T j =150 o C 0.4 T j =25 o C Normalized -VGS(th) (V) 1.2 1.0 0.5 0.2 0.0 0 0.2 0.4 0.6 0.8 1 0.0 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP1333GU 12 100 f=1.0MHz -VGS , Gate to Source Voltage (V) 10 I D =-0.5A V DS =-16V C iss 8 6 C (pF) C oss C rss 4 2 0 0 1 2 3 4 10 1 3 5 7 9 11 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 1 100us 0.2 0.1 -ID (A) 0.05 0.1 0.02 1ms 0.1 PDM 0.01 t T Single Pulse T A =25 C Single Pulse 0.01 0.1 1 10 o 10ms 100ms DC 100 Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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