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| STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET General features Type STP10NK80Z STW10NK80Z STP10NK80ZFP VDSS 800V 800V 800V RDS(on) <0.90 <0.90 <0.90 ID 9A 9A 9A Pw 160 W 160 w 40 W TO-220 1 2 3 3 1 2 TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeability TO-247 Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Internal schematic diagram Applications Switching application Order codes Part number STP10NK80Z STP10NK80ZFP STW10NK80Z Marking P10NK80Z P10NK80ZFP W10NK80Z Package TO-220 TO-220FP TO-247 Packaging Tube Tube Tube July 2006 Rev 6 1/15 www.st.com 15 Contents STP10NK80ZFP - STP10NK80Z - STW10NK80Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 STP10NK80ZFP - STP10NK80Z - STW10NK80Z Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID ID IDM(2) PTOT Absolute maximum ratings Value Parameter TO-220/ TO-247 Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20K) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating Factor 9 6 36 160 1.28 4 4.5 --55 to 150 2500 800 800 30 9(1) 6(1) 36(1) 40 0.32 TO-220FP V V V A A A W W/C KV V/ns V C Unit Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5k) dv/dt (3) Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature VISO TJ Tstg 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD di/dt 9A, 200A/s,VDD V(BR)DSS, Tj TJMAX Table 2. Symbol Rthj-case Rthj-a Tl Thermal data Value Parameter TO-220 TO-220FP Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose 0.78 62.5 300 3.1 TO-247 0.78 50 C/W C/W C Unit Table 3. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Value 9 290 Unit A mJ 3/15 Electrical characteristics STP10NK80ZFP - STP10NK80Z - STW10NK80Z 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test condictions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 20V VDS= VGS, ID = 100A VGS= 10V, ID= 4.5A 3 3.75 0.78 Min. 800 1 50 10 Typ. Max. Unit V A A nA V 4.5 0.9 Table 5. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test condictions VDS =15V, ID = 4.5A Min. Typ. 9.6 2180 205 38 105 72 12.5 37 Max. Unit S pF pF pF pF nC nC nC VDS =25V, f=1 MHz, VGS=0 Coss eq(2). Equivalent output capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VGS=0, VDS =0V to 640V VDD=640V, ID = 9A VGS =10V (see Figure 19) 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS 4/15 STP10NK80ZFP - STP10NK80Z - STW10NK80Z Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on Delay Time Rise Time Test condictions VDD=400 V, ID=4.5A, RG=4.7, VGS=10V (see Figure 20) VDD=400 V, ID=4.5A, RG=4.7, VGS=10V (see Figure 20) Min. Typ. 30 20 Max. Unit ns ns Turn-off Delay Time Fall Time 65 17 ns ns Table 7. Symbol Gate-source zener diode Parameter Test condictions Igs=1mA (Open Drain) Min. 30 Typ. Max. Unit V BVGSO(1) Gate-Source Breakdown Voltage 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. Table 8. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=9A, VGS=0 ISD=9A, di/dt = 100A/s, VDD=45V, Tj=150C 645 6.4 20 Test condictions Min Typ. Max 9 36 1.6 Unit A A V ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% 5/15 Electrical characteristics STP10NK80ZFP - STP10NK80Z - STW10NK80Z 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247 6/15 STP10NK80ZFP - STP10NK80Z - STW10NK80Z Figure 7. Output characterisics Figure 8. Electrical characteristics Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 7/15 Electrical characteristics Figure 13. Normalized gate threshold voltage vs temperature STP10NK80ZFP - STP10NK80Z - STW10NK80Z Figure 14. Normalized on resistance vs temperature Figure 15. Source-drain diode forward characteristics Figure 16. Normalized BVDSS vs temperature Figure 17. Maximum avalanche energy vs temperature 8/15 STP10NK80ZFP - STP10NK80Z - STW10NK80Z Test circuit 3 Test circuit Figure 19. Gate charge test circuit Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/15 Package mechanical data STP10NK80ZFP - STP10NK80Z - STW10NK80Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/15 STP10NK80ZFP - STP10NK80Z - STW10NK80Z Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 11/15 Package mechanical data STP10NK80ZFP - STP10NK80Z - STW10NK80Z TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 12/15 G STP10NK80ZFP - STP10NK80Z - STW10NK80Z Package mechanical data TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 13/15 Revision history STP10NK80ZFP - STP10NK80Z - STW10NK80Z 5 Revision history Table 9. Date 08-Sep-2005 10-Mar-2006 28-Sep-2005 Document revision history Revision 4 5 6 Complete document Inserted ecopack indication New template, no content change Changes 14/15 STP10NK80ZFP - STP10NK80Z - STW10NK80Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15 |
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