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| SML9030-T254 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) P-CHANNEL MOS TRANSISTOR VDSS ID(cont) RDS(on) FEATURES * P CHANNEL * REPETITIVE AVALANCHE RATED * DYNAMIC dv/dt RATING 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) -50V -18A W 0.14W 1 2 3 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 20.07 (0.790) 20.32 (0.800) 3.81 (0.150) BSC * FAST SWITCHING * EASE OF PARALLELING * SIMPLE DRIVE REQUIREMENTS TO-254 - Metal Package Pin 1 - Drain Pin 2 - Source Pin 3 - Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ TSTG RqJC RqJA Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 20V (VGS = -10V , Tcase = 25C) (VGS = -10V , Tcase = 100C) -18A -13A -72A 88W 0.59W/C 2 Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current 1 370mJ -18A 8.8mJ -4.5V/ns -55 to +175C -55 to +200C 0.6C/W 48C/W Repetitive Avalanche Energy 1 Peak Diode Recovery 3 Operating Junction Temperature Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Notes 1) Repetitive Rating: Pulse width limited by maximum junction temperature. 2) @ VDD = -25V , L = 1.3mH , RG = 25W , IAS = -18A , Starting TJ = 25C. 3) @ ISD -18A , di/dt 170A/ms , VDD BVDSS , TJ 175C. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 1/95 SML9030-T254 ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Test Conditions VGS = 0 ID = -1mA VGS = -10V VDS = VGS 1 Min. -50 Typ. Max. Unit V ID = -250mA DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain - Source On Resistance 1 VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr LD LS Forward Transconductance Reference to 25C ID = -11A ID = -250mA ID = -11A VGS = 0 VGS = 0 TJ = 125C -2 5.9 -0.060 0.14 -4 -100 -500 -100 100 1100 620 100 34 9.9 16 18 120 20 58 -18 -72 V / C W V S VDS = -25V VDS = -60V VDS = -48V VGS = -20V VGS = 20V VGS = 0 VDS = -25V f = 1MHz ID = -18A VDS = -48V 1 Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1 1 mA nA pF Gate - Source Charge Turn-On Delay Time Rise Time 1 1 1 nC Gate - Drain ("Miller") Charge VGS = -10V VDD = -30V ID = -18A RG = 12W RD = 1.5W Turn-Off Delay Time Fall Time 1 nC SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current (Body Diode) Pulse Source Current 2 (Body Diode) IS = -18A VGS = 0 IF = -18A 1 A V ns Diode Forward Voltage 1 Reverse Recovery Time 1 Reverse Recovery Charge TJ = 25C TJ = 25C 100 0.28 4.5 7.5 -6.3 200 0.52 di / dt = 100A/ms mC PACKAGE CHARACTERISTICS Internal Drain Inductance (from 6mm down lead to centre of drain bond pad) Internal Source Inductance (from 6mm down lead to centre of source bond pad) nH Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 1/95 |
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