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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV897 UHF push-pull power transistor
Preliminary specification Supersedes data of 1997 Oct 03 1997 Nov 10
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
FEATURES * Internal input matching for an optimum wideband capability and high gain * Polysilicon emitter ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability. APPLICATIONS * Common emitter class-AB operation in base stations in the 800 to 960 MHz frequency band.
handbook, halfpage
BLV897
PINNING - SOT324B PIN 1 2 3 4 5 SYMBOL c1 c2 b1 b2 e DESCRIPTION collector 1 collector 2 base 1 base 2 common emitters connected to flange
c1 2 b1 e 5 b2
DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are connected to the flange.
1
3 Top view
4 c2
MAM217
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter push-pull test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 900 900 VCE (V) 24 24 ICQ (mA) 2 x 80 2 x 80 PL (W) 30 30 (PEP) Gp (dB) 10 11 C (%) 45 35 d3 (dBc) - <-32; typ. -37
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Nov 10
2
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj Note 1. Total device; both sections equally loaded. THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. Total device; both sections equally loaded. CHARACTERISTICS Values apply to either transistor section; Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE Cc PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain collector capacitance CONDITIONS IC = 15 mA; IE = 0 IC = 30 mA; IB = 0 IE = 0.6 mA; IC = 0 VCB = 28 V; VBE = 0 VCE = 10 V; IC = 1 A MIN. 70 30 3 - 30 TYP. - - - - - 18 PARAMETER CONDITIONS VALUE 1.79 0.4 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature Tmb = 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - - -65 - MIN.
BLV897
MAX. 70 30 3 5 5 97 +150 200 V V V A A W
UNIT
C C
UNIT K/W K/W
thermal resistance from junction to mounting base Ptot = 97 W; note 1 thermal resistance from mounting base to heatsink note 1
MAX. - - - 1.5 120 -
UNIT V V V mA pF
VCB = 24 V; IE = ie = 0; f = 1 MHz -
1997 Nov 10
3
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter push-pull class-AB test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 900 900 VCE (V) 24 24 ICQ (mA) 2 x 80 2 x 80 PL (W) 30 30 (PEP) Gp (dB) 10 11 C (%) 45 35
BLV897
d3 (dBc) - <-32; typ. -37
Ruggedness in class-AB operation The BLV897 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the conditions: VCE = 24 V; ICQ = 2 x 80 mA; f = 900 MHz; Th = 25 C; PL = 30 W. The transistor is also capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases at PL = 30 W (PEP).
handbook, halfpage
50
MBK287
PL (W) 40
handbook, halfpage G
14 p (dB) 12
MBK286
70 C (%) 60 50
Gp
10 30 C 8 6 4 10 2 0 0 1 2 3 4 5 6 PD (W) 0 0 10 20 30 40 PL (W)
40 30 20 10 0 50
20
VCE = 24 V; ICQ = 2 x 80 mA; f = 900 MHz.
VCE = 24 V; ICQ = 2 x 80 mA; f = 900 MHz.
Fig.2
Load power as a function of drive power; typical values.
Fig.3
Power gain and collector efficiency as functions of load power; typical values.
1997 Nov 10
4
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV897
handbook, full pagewidth
L12 VBB R3
C8
L16 R6
C24 +VCC C22
C6
R1
C10
C12
C14
C16 C18
C20
input 50
,,,, ,,,, ,,,, ,, ,,,, ,, ,,,, ,,,, ,,,, ,,,, ,,,,
L14 L10 L8 L6 L1 C1 L4 L2 C4 C3 C2 L3 L5 L7 L9 L11 L15 C5 R2 C9 C11 C13 C15 L13 C7
L20
DUT
L21
,,,, ,,,, ,,,,,, ,,,, ,,,,,, ,,,, ,,,, ,,,,
L18 L22 L24 L26 C28 L28 L29 C25 C27 C26 C29 L25 L27 L30 L23 L19 C19 R5 C21 +VCC L17 C23
MGM146
output 50
C17
VBB
R4
Fig.4 Class-AB test circuit at 900 MHz.
1997 Nov 10
5
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
List of components COMPONENT C1, C2 C3, C27 C4, C25 DESCRIPTION multilayer ceramic chip capacitor; note 1 Tekelec trimmer (type 37271) multilayer ceramic chip capacitor; note 1 VALUE 47 pF; 500 V 0.6 to 4.5 pF 5.6 pF; 500 V 300 pF; 200 V 10 F; 35 V 100 nF; 50 V 10 nF; 50 V 39 pF; 500 V 2.7 pF; 500 V 27 pF; 500 V 50 50 57.1 x 3 mm ext. conductor length 57.1 mm, ext. dia. 2.2 mm 18 x 2.6 mm 2 x 15 mm 4.8 x 15 mm 3 x 31.5 mm DIMENSIONS
BLV897
CATALOGUE No.
C5, C6, C13, C14, multilayer ceramic chip capacitor; C19, C20, C21, C22 note 1 C7, C8, C23, C24 C9, C10 C11, C12 tantalum SMD capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor
2222 581 76641 2222 581 76627
C15, C16, C17, C18 multilayer ceramic chip capacitor; note 1 C26 C28, C29 L1, L3, L28, L30 L2, L29 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 stripline; note 2 semi-rigid cable; note 3
L4, L5 L6, L7 L8, L9 L10, L11 L12, L13, L16, L17 L14, L15 L18, L19 L20, L21 L22, L23 L24, L25 L26, L27 R1, R2, R5, R6 R3, R4 Notes
stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 Ferroxcube chip-bead grade 4S2 microchoke 4 turns enamelled 1 mm copper wire stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 metal film resistor metal film resistor 5.11 ; 0.4 W 4.7 ; 0.4 W 470 nH
4330 030 36300 4322 057 04771 int. dia. 6 mm, close wound 3 x 24 mm 7.5 x 20 mm 8.5 x 3 mm 11 x 3 mm 2322 151 75118 2322 151 77508
1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board: PTFE microfibre-glass dielectric (r = 2.2); thickness 1/32 inch; thickness of the copper sheet 2 x 35 m. 3. Semi-rigid cables L2 and L29 are soldered on the striplines L1 and L30.
1997 Nov 10
6
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV897
handbook, full pagewidth
58
60.5
80
80
C12 C10 C14 C8 +VBB R3 R1 L1 L2 C1 L4 L5 C4 C3 L7 L9 R2 +VBB R4 C5 L13 C7 L15 C15 C9 C13 C11 C19 C17 L17 C21
MGM147
C6
L12
C16 L14 L10 L8 L6
C18 C20 L18 L20 L22
C22 L16 R6 C24 +VCC
L28 C26 C27 C28 L26 L24 L25 L27 C29 L29 L30 L23 L21 L19 R5 +VCC C23
C25
C2 L3
L11
Dimensions in mm. The components are located on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.5 Printed-circuit board for the 900 MHz class-AB test circuit.
1997 Nov 10
7
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLV897
SOT324B
D
A F
5
U1 q C
B c
1
L
2
U2
E
A
L
p
w1 M A B
3
b s
4
w2 M C Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 4.37 3.55 b 1.66 1.39 c 0.13 0.07 D 8.69 8.07 E 6.91 6.29 F 1.66 1.39 L 5.59 4.57 p 3.43 3.17 Q 2.32 2.00 q 14.22 s 1.66 1.39 U1 19.03 18.77 U2 6.43 6.17 w1 0.51 w2 1.02
OUTLINE VERSION SOT324B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-05
1997 Nov 10
8
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BLV897
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Nov 10
9
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
NOTES
BLV897
1997 Nov 10
10
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
NOTES
BLV897
1997 Nov 10
11
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127067/00/02/pp12
Date of release: 1997 Nov 10
Document order number:
9397 750 02952

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