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| BAL99 BAL99 Fast Switching Surface Mount Si-Planar Diodes Schnelle Si-Planar-Dioden fur die Oberflachenmontage Version 2006-04-07 Power dissipation - Verlustleistung 2.9 0.1 0.4 3 max 310 mW 70 V SOT-23 (TO-236) 0.01 g 1.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 0.1 1 2 1.9 Dimensions - Mae [mm] 1 = n.c. /frei 2 = C 3 = A Maximum ratings (TA = 25C) Power dissipation - Verlustleistung Max. average forward current (dc) Dauergrenzstrom Non repetitive peak forward surge current Stostrom-Grenzwert Repetitive peak reverse voltage Periodische Spitzensperrspannung Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur tp 1 s tp 1 ms tp 1 s Ptot IFAV IFSM IFSM IFSM VRRM Tj TS 2.5 1.3 Type Code Grenzwerte (TA = 25C) BAL99 310 mW 1) 250 mA 1) 0.5 A 1A 2A 70 V -55...+150C -55...+150C Characteristics (Tj = 25C) Forward voltage Durchlass-Spannung IF IF IF IF Tj = 25C Tj = 150C = = = = 1 mA 10 mA 50 mA 150 mA VF VF VF VF IR IR IR CT trr RthA Kennwerte (Tj = 25C) < 715 mV < 855 mV < 1000 mV < 1250 mV < 2.5 A < 30 A < 100 A 1.5 pF < 6 ns 400 K/W 1) Leakage current 2) Sperrstrom VR = 70 V VR = 25 V VR = 70 V Max. junction capacitance - Max. Sperrschichtkapazitat VR = 0 V, f = 1 MHz Reverse recovery time - Sperrverzug IF = 10 mA uber/through IR = 10 mA bis/to IR = 1 mA Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 BAL99 Outline - Gehause 3 Pinning - Anschlussbelegung Single Diode Einzeldiode Marking - Stempelung BAL99 = JF 1 2 1 = n.c./frei 2 = C 3 = A 120 [%] 100 1 [A] 10-1 80 Tj = 125C 60 10 -2 40 10-3 20 Ptot 0 0 TA 50 100 150 [C] 1 Tj = 25C IF 10-4 0 VF 0.4 0.6 0.8 1.0 [V] 1.4 Power dissipation versus ambient temperature ) Verlustleistung in Abh. von der Umgebungstemp.1) Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 2 http://www.diotec.com/ (c) Diotec Semiconductor AG |
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