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| APTM10DHM05G Asymmetrical - Bridge MOSFET Power Module VBUS Q1 CR3 G1 OUT2 S1 OUT1 CR2 Q4 VDSS = 100V RDSon = 4.5m typ @ Tj = 25C ID = 278A @ Tc = 25C Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features * G4 0/VBUS S4 - * * OUT1 G1 S1 VBUS 0/VBUS * Benefits S4 G4 Power MOS V(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration OUT2 * * * * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Tc = 25C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM10DHM05G- Rev 1 Max ratings 100 278 207 1100 30 5 780 100 50 3000 Unit V A V m W A mJ July, 2006 APTM10DHM05G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25C Tj = 125C Typ VGS = 10V, ID = 125A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V 4.5 2 Max 200 1000 5 4 200 Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID = 250A Inductive switching @ 125C VGS = 15V VBus = 66V ID = 250A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 66V ID = 250A, R G =2.5 Inductive switching @ 125C VGS = 15V, VBus = 66V ID = 250A, R G = 2.5 Min Typ 20 8 2.9 700 120 360 80 165 280 135 1.1 1.2 1.22 1.28 Max Unit nF nC ns mJ mJ Diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 200A IF = 400A IF = 200A IF = 200A VR = 133V di/dt =400A/s Min 200 Typ Max 350 600 Unit V A A V ns nC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=200V Tj = 125C Tj = 25C Tj = 125C 110 400 1680 www.microsemi.com 2-6 APTM10DHM05G- Rev 1 July, 2006 Tj = 125C Tj = 25C 200 1 1.4 0.9 60 APTM10DHM05G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 transistor diode 2500 -40 -40 -40 3 2 Min Typ Max 0.16 0.29 150 125 100 5 3.5 280 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM10DHM05G- Rev 1 July, 2006 APTM10DHM05G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse 0.9 0 0.00001 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1200 ID, Drain Current (A) ID, Drain Current (A) 1000 800 600 400 200 0 0 4 8 12 16 20 24 28 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) Normalized to V GS=10V @ 125A 8V 7V 6V VGS =15V, 10V & 9V Transfert Characteristics 240 200 160 120 80 40 0 0 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 T J=25C T J=125C T J=-55C V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 300 250 200 150 100 50 0 1.1 V GS=10V 1 0.9 0.8 0 25 50 75 100 125 150 175 200 ID, Drain Current (A) VGS=20V 25 50 75 100 125 150 July, 2006 TC, Case Temperature (C) www.microsemi.com 4-6 APTM10DHM05G- Rev 1 APTM10DHM05G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 10000 VGS=10V ID= 125A 1000 limited by RDSon 100s 100 Single pulse TJ=150C TC=25C 1 1ms 10ms 10 10 100 VDS , Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC) July, 2006 VDS=50V V DS =80V ID=250A TJ=25C V DS =20V Ciss 10000 Coss Crss 1000 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5-6 APTM10DHM05G- Rev 1 APTM10DHM05G Delay Times vs Current 350 300 t d(on) and td(off) (ns) VDS=66V RG=2.5 T J=125C L=100H Rise and Fall times vs Current 250 200 tr and t f (ns) V DS =66V RG =2.5 T J=125C L=100H tr 250 200 150 100 50 0 0 t d(off) 150 100 50 0 tf td(on) 100 200 300 ID, Drain Current (A) Switching Energy vs Current 400 0 100 200 300 ID, Drain Current (A) 400 Switching Energy vs Gate Resistance 5 Switching Energy (mJ) VDS=66V ID=200A TJ=125C L=100H 3 2.5 Eon and Eoff (mJ) 2 1.5 1 0.5 0 0 100 200 300 400 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 100 80 60 40 20 0 50 100 150 200 250 I D, Drain Current (A) VDS=66V D=50% RG=2.5 T J=125C T C=75C Hard switching ZCS VDS=66V RG=2.5 TJ=125C L=100H Eoff 4 3 2 1 0 0 Eoff Eon Eon Eoff 5 10 15 20 25 30 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150C Frequency (kHz) 100 TJ=25C ZVS 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) July, 2006 Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM10DHM05G- Rev 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein |
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