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APTGT100H60T3G
Full - Bridge Trench + Field Stop IGBT(R) Power Module
13 14
VCES = 600V IC = 100A* @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS Compliant Max ratings 600 150 * 100 * 200 20 340 200A @ 550V Unit V A V W
June, 2006 1-5 APTGT100H60T3G - Rev 1
Q1 18 19
CR1
CR3
Q3 11 10
22 23 Q2
7 8 CR4 Q4
26 27
CR2
4 3
29 15
30
31 R1
32 16
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C
Reverse Bias Safe Operating Area
* Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT100H60T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 100A Tj = 150C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 100A R G = 3.3 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 100A R G = 3.3 VGE = 15V Tj = 25C VBus = 300V Tj = 150C IC = 100A Tj = 25C R G = 3.3 Tj = 150C
Min
Typ 6100 390 190 115 45 225 55 130 50 300 70 0.4 0.875 2.5 3.5
Max
Unit pF
ns
ns
mJ mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
Test Conditions VR=600V IF = 100A VGE = 0V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Min 600
Typ
Max 250 500
Unit V A A
di/dt =2000A/s
mJ
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APTGT100H60T3G - Rev 1
June, 2006
IF = 100A VR = 300V
100 1.6 1.5 125 220 4.7 9.9 1.1 2.4
2
V ns C
APTGT100H60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.44 0.77 175 125 100 4.7 110
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
2500 -40 -40 -40 2.5
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTGT100H60T3G - Rev 1
June, 2006
17
28
APTGT100H60T3G
Typical Performance Curve
Output Characteristics (V GE=15V) Output Characteristics 200 175 150 IC (A)
T J=150C T J = 150C VGE =19V
200 175 150
IC (A)
TJ=25C T J=125C
125 100 75 50 25 0 0 0.5 1
T J=25C
125 100 75 50 25 0
VGE =13V VGE =15V
V GE=9V
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
200 175 150 125 IC (A) 100 75 50 25 0 5
Transfert Characteristics 7
TJ =25C
Energy losses vs Collector Current 6 5 E (mJ) 4 3 2
Er VCE = 300V VGE = 15V RG = 3.3 TJ = 150C Eoff
TJ=125C T J=150C TJ =25C
1 0 11 12 0 25 50 75
Eon
6
7
8
9
10
100 125 150 175 200 IC (A)
VGE (V) Switching Energy Losses vs Gate Resistance 8
VCE = 300V VGE =15V IC = 100A T J = 150C
Reverse Bias Safe Operating Area 250
6 E (mJ)
Eoff
200 IF (A)
Eon
150 100
4
2
Eon
Er
50 0
V GE=15V T J=150C RG=3.3
0 0 5 10 15 20 25 Gate Resistance (ohms) 30
0
100
200
300 400 V CE (V)
500
600
700
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0.4 0.3 0.5 0.2 0.1 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 0.7
IGBT
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
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4-5
APTGT100H60T3G - Rev 1
June, 2006
APTGT100H60T3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 0 25 50 75 IC (A) 100 125 150
Hard switching ZCS ZVS VCE=300V D=50% RG=3.3 TJ =150C
Forward Characteristic of diode 200 175 150 125 IF (A) 100 75 50 25 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
T J=125C TJ =150C
Tc=85C
TJ=25C
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 Thermal Impedance (C/W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
Diode
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGT100H60T3G - Rev 1
Microsemi reserves the right to change, without notice, the specifications and information contained herein
June, 2006

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