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APT35GP120J
1200V
POWER MOS 7 IGBT
G
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
ISOTOP (R)
(R)
E C
E
SO
2 T-
27
"UL Recognized"
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
* 50 kHz operation @ 800V, 14A * 20 kHz operation @ 800V, 25A * RBSOA rated
G E C
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT35GP120J UNIT
1200 20 30 64 29 140 140A @ 960V 284 -55 to 150 300
Watts C Amps Volts
@ TC = 25C
Reverse Bias Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
1200 3 4.5 3.3 3 250
2
6 3.9
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
2
I CES I GES
A nA
6-2003 050-7409 Rev D
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
2500 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT35GP120J
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 35A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 960V Inductive Switching (25C) VCC = 600V VGE = 15V I C = 35A
4
MIN
TYP
MAX
UNIT
3240 248 31 7.5 150 21 62 140 16 20 94 40 750 1305 680 16 20 147 75 750 2132 1744 J
ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area
td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
4 5 6
R G = 5 TJ = +25C
J
Inductive Switching (125C) VCC = 600V VGE = 15V I C = 35A R G = 5 TJ = +125C
Turn-on Switching Energy (Diode) Turn-off Switching Energy
6
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.44 N/A 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
6-2003 050-7409 Rev D
TYPICAL PERFORMANCE CURVES
80 70
IC, COLLECTOR CURRENT (A)
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
80 70
IC, COLLECTOR CURRENT (A)
APT35GP120J
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
60 50 40 30 20 10 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 120 TC=25C TC=125C
60 50 40 30 20 10 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (VGE = 10V) 16 TC=125C TC=25C
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
100
14 12 10 8 6 4 2 0 0
IC = 35A TJ = 25C
VCE= 240V VCE= 600V VCE= 960V
80
60 TJ = 25C TJ = 125C 20 0 0 1 TJ = -55C 23 456 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
40
20
40 60 80 100 120 140 160 GATE CHARGE (nC) FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
5 4.5 4 3.5 3 2.5 2 1.5 1 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
5
IC= 70A
IC=70A IC= 35A
4 IC= 35A 3 2 1 0 IC=17.5A
IC= 17.5A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
6
25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 90
0
0
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.1 1.05 1.0 0.95 0.90 0.85 0.8 -50
80 70 60 50 40
6-2003 050-7409 Rev D
30 20 10 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT35GP120J
35
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
180 160 140 120 100 80 60 40 VCE = 600V 20 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100 90 80
TJ = 125C, VGE = 10V or 15V RG = 5 L = 100 H VGE =10V,TJ=25C VGE =10V,TJ=125C VGE =15V,TJ=25C VGE =15V,TJ=125C
30 VGE= 10V 25 20 15 10 5
VCE = 600V TJ = 25C, TJ =125C RG = 5 L = 100 H
VGE= 15V
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 140
RG = 5, L = 100H, VCE = 600V
120 100 80 60 40 20 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 5000
EON2, TURN ON ENERGY LOSS (J)
TJ=125C,VGE=15V TJ = 25 or 125C,VGE =10V TJ = 25 or125C,VGE = 10V
tr, RISE TIME (ns)
tf, FALL TIME (ns)
70 60 50 40 30 20 10 0
RG = 5, L = 100H, VCE = 600V TJ = 25C, VGE = 10V or 15V
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 4000
EOFF, TURN OFF ENERGY LOSS (J)
VCE = 600V RG = 5
VCE = 600V RG = 5
4000
TJ=125C,VGE=10V
3000
TJ = 125C, VGE = 10V or 15V
3000
2000
2000
TJ= 25C,VGE=15V
1000
TJ = 25C, VGE = 10V or 15V
1000
TJ= 25C,VGE=10V
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 8000
SWITCHING ENERGY LOSSES (J)
VCE = 600V VGE = +15V TJ = 125C
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 5000
SWITCHING ENERGY LOSSES (J)
VCE = 600V VGE = +15V RG = 5
0
7000 6000 5000 4000 3000 2000
Eon2 70A
Eon2 70A
4000
3000 Eoff70A Eon2 35A 2000 Eon2 17.5A Eoff 35A Eoff 17.5A 0
Eoff 70A
6-2003
Eon2 35A Eon2 17.5A Eoff 35A Eoff 17.5A
1000
Rev D
1000 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 0
050-7409
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
10,000 5,000
C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A)
APT35GP120J
160 Cies 140 120 100 80 60 40 20 0 0 100 200 300 400 500 600 700 800 900 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Reverse Bias Safe Operating Area
P
1,000 500 Coes 100 50 Cres 10
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0.45 0.4
ZJC, THERMAL IMPEDANCE (C/W)
0.9
0.35 0.7 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 10-4 0.1 0.05 SINGLE PULSE 0.3 0.5 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
RC MODEL
0.0966
0.00997F
FMAX, OPERATING FREQUENCY (kHz)
Junction temp. ( "C)
100
50
Power (Watts)
0.228
0.158F
Fmax = min(f max1 , f max 2 ) f max1 =
10
TJ = 125C TC = 75C D = 50 % VCE = 800V RG = 5
0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
0.116 Case temperature
1.958F
f max 2 = Pdiss =
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
3
TJ - TC R JC
10
20 30 40 50 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
050-7409
Rev D
6-2003
APT35GP120J
APT30DF120
10% t d(on)
Gate Voltage TJ = 125 C
V CC
IC
V CE
tr 90% Collector Current 5% 10% 5% Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
VTEST
t d(off)
90%
*DRIVER SAME TYPE AS D.U.T.
Gate Voltage T J = 125 C
tf
Collector Voltage
A V CE IC
10% 0 Collector Current
100uH V CLAMP B
Switching Energy
A DRIVER* D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594)
1.95 (.077) 2.14 (.084)
* Emitter
Collector
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
6-2003
30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Rev D
* Emitter
Dimensions in Millimeters and (Inches)
Gate
050-7409
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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