 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1740TP PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8, 9 : Drain SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The PA1740TP is N-channel MOS FET device that features a low on-state resistance and excellent swiching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES * High voltage: VDSS = 200 V * Gate voltage rating: 30 V * Low on-state resistance RDS(on) = 0.44 MAX. (VGS = 10 V, ID = 3.5 A) * Low input capacitance Ciss = 420 pF TYP. (VDS = 10 V, VGS = 0 V) * Built-in gate protection diode * Small and surface mount package (Power HSOP8) * Avalanche capability rated 1.49 0.21 1.44 TYP. 1 5.2 +0.17 -0.2 4 0.8 0.2 S +0.10 -0.05 6.0 0.3 4.4 0.15 0.05 0.05 0.15 1.27 TYP. 0.40 1 +0.10 -0.05 0.10 S 0.12 M 2.0 0.2 2.9 MAX. ORDERING INFORMATION PART NUMBER PA1740TP PACKAGE Power HSOP8 8 9 4.1 MAX. 5 ABSOLUTE MAXIMUM RATINGS (TA = 25C, Unless otherwise noted, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg Note2 200 30 7.0 21 22 1.0 150 -55 to + 150 7.0 4.9 7.0 2.2 V V A A W W C C A mJ A mJ Gate Protection Diode Source Gate Body Diode Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 Note4 Note4 EQUIVALENT CIRCUIT Drain IAS EAS IAR EAR Repetitive Avalanche Current Repetitive Avalanche Energy Notes 1. 2. 3. 4. PW 10 s, Duty Cycle 1% Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec Starting Tch = 25C, VDD = 100 V, RG = 25 , L = 100 H, VGS = 20 0 V Tch 125C, VDD = 100 V, RG = 25 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15937EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan 1.1 0.2 4 (c) 2001 PA1740TP ELECTRICAL CHARACTERISTICS (TA = 25C, Unless otherwise noted, All terminals are connected.) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 160 V VGS = 10 V ID = 7.0 A IF = 7.0 A, VGS = 0 V IF = 7.0 A, VGS = 0 V di/dt = 50 A/s TEST CONDITIONS VDS = 200 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 3.5 A VGS = 10 V, ID = 3.5 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 100 V, ID = 3.5 A VGS = 10 V RG = 10 2.5 3 3.5 4.5 0.35 420 100 45 5 7.5 21 7 12 2 6.5 1.0 110 360 1.5 0.44 MIN. TYP. MAX. 10 10 4.5 UNIT A A V S pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V 50 TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 RL VDD 2 Data Sheet G15937EJ1V0DS PA1740TP TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 25 100 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 20 80 15 60 40 10 20 5 0 0 25 50 75 100 125 150 175 0 0 25 50 75 100 125 150 175 TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 ID(DC) = 7.0 A RDS(on) Limited (VGS = 10 V) ID - Drain Current - A 10 PW = 100 s DC 1 1 ms 10 ms 0.1 Power Dissipation Limited TC = 25C Single Pulse 0.1 1 10 100 1000 0.01 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A)(t) - Transient Thermal Resistance - C/W Rth(j-A) = 125C/W 100 10 Rth(j-C) = 5.68C/W 1 0.1 100 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 Data Sheet G15937EJ1V0DS 3 PA1740TP DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 30 Pulsed 25 FORWARD TRANSFER CHARACTERISTICS 100 10 VGS = 10 V VDS = 10 V Pulsed ID - Drain Current - A 20 15 10 5 0 0 5 ID - Drain Current - A 1 0.1 0.01 0.001 0.0001 Tch = 125C 75C 25C -25C 10 15 20 25 30 0 5 10 15 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 100 VDS = 10 V Pulsed 10 5.0 VGS(off) - Gate Cut-off Voltage - V 4.5 4.0 3.5 3.0 2.5 2.0 -50 -25 0 25 50 75 1 TA = 125C 75C 25C -25C 0.1 100 125 150 0.01 0.01 0.1 1 10 100 Tch - Channel Temperature - C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - 2 Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V Pulsed 1.5 1 ID = 7.0 A 3.5 A 1.4 A 0.5 VGS = 10 V 0 0.01 0.1 1 10 100 ID - Drain Current - A 4 Data Sheet G15937EJ1V0DS PA1740TP DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - 1.4 1000 VGS = 10 V Pulsed CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 0.8 0.6 3.5 A 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 ID = 7.0 A Ciss, Coss, Crss - Capacitance - pF 1.2 Ciss 100 Coss 10 Crss VGS = 0 V f = 1 MHz 1 0.1 1 10 100 1000 Tch - Channel Temperature - C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 240 12 10 8 VGS 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VDS - Drain to Source Voltage - V 200 180 160 140 120 100 80 60 40 20 0 td(off) 10 td(on) tr tf VDS 1 0.1 1 10 100 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed 1000 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 10 trr - Reverse Recovery Diode - ns IF - Diode Forward Current - A 100 1 VGS = 0 V 10 0.1 VGS = 0 V di/dt = 100 A/ s 0.01 0 0.25 0.5 0.75 1 1.25 1.5 1 0.1 1 10 100 VSD - Source to Drain Voltage - V Data Sheet G15937EJ1V0DS IF - Diode Forward Current - A 5 VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns VDD = 100 V VGS = 10 V RG = 0 220 VDD = 160 V 100 V 40 V ID = 7.0 A PA1740TP SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 SINGLE AVALANCHE ENERGY DERATING FACTOR 100 VDD = 100 V RG = 25 VGS = 20 0 V IAS 7.0 A IAS - Single Avalanche Current - A 80 10 IAS = 7.0 A EAS = 4.9 mJ Energy Derating Factor - % 60 40 1 VDD = 100 V RG = 25 VGS = 20 0 V Starting Tch = 25C 0.1 20 0 0.01 0.1 1 10 25 50 75 100 125 150 L - Inductive Load - mH Starting Tch - Starting Channel Temperature - C 6 Data Sheet G15937EJ1V0DS PA1740TP [MEMO] Data Sheet G15937EJ1V0DS 7 PA1740TP * The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 |
Price & Availability of UPA1740TP
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |