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| TQM7M4022 ( Preliminary data sheet) 3V Quad-Band GSM850/900/DCS/PCS Power Amplifier Module 7mm x 7mm LGA Package Outline: Description: Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT technology. The module is fully integrated, providing a simple 50 Ohms interface on all input and output ports. No external matching or bias components are required. Despite its very compact size, the module has exceptional efficiency in all bands. Band select and power control inputs on the module are CMOS compatible. Dimensions in mm Top view Features: * Very compact size - 7x7x1.3mm * High efficiency - typical GSM850 53%, GSM900 58%, DCS 50%, PCS 50%. * Positive supply voltage - 3.0 to 4.5 V. * No reference voltage needed * 50 input and output impedances. * GPRS class 12 compatible. * CMOS band select and power control inputs. * High-reliability InGaP technology. * Ruggedness 10:1. Bottom view Side view ! Caution! ESD sensitive device. Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 2 1. Absolute maximum ratings Item # 1 2 3 4 5 6 7 7 8 9 Parameter DC Supply Voltage DC Supply Current Power Control Voltage Transmit_Enable Band Select Input RF Power DC Voltage on RFin ports Operating Duty Cycle Operating Temperature Storage Temperature TA TS Symbol VBATT IBATT VRAMP TX_EN BS PIN Specifications Min -0.5 Typ Max 6.0 2.4 -0.5 -0.5 -0.5 3.0 3.0 3.0 13 4.0 50 -30 -55 85 155 Unit V A V V V dBm V % C C Frame Length = 4.6ms No operation remarks Note: The amplifier will survive over the full range specified for any individual input, while other parameters are nominal and with no RF input. 2. Operating Parameters Item # 1 2 3 Parameter Supply Voltage Supply current Analog Power Control Voltage Current Input capacitance Rise time VRAMP IRAMP 15 0.2 1.7 10 20 2 V A pF s VRAMP from 0.2V to VRAMP_MAX, POUT from POUT_MIN to POUT_MAX 4 Transmit Enable TX_EN on TX_EN off Current 5 Band Select High Low Current BS 1.8 0 3.0 0.5 10 V V A Logic High: DCS/PCS Logic Low: GSM850/900 TX_EN 1.8 0 3.0 0.5 10 V V A Logic High: PA on Logic Low: PA off VRAMP_MAX = 1.7V Symbol VBATT IBATT off Specifications Min 3.0 Typ 3.5 Max 4.5 10 Unit V A remarks Normal operation TX_EN = low Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 3 3. GSM850 Electrical Characteristics Conditions unless otherwise stated: TA=25C, ZS=ZL=50; VBATT=3.5V; BS=low; TX_EN=high; PIN=5dBm, Duty Cycle = 25%, Pulse Width = 1154s, VRAMP= VRAMP_MAX Item # 1 2 3 Parameter Frequency range Input power Input impedance Input VSWR 4 5 Load impedance Load mismatch stability All angles All spurious < -36 dBm, RBW=3MHz 6 Load mismatch ruggedness All angles No damage or permanent degradation 7 8 Forward isolation Crossover isolation 2nd harmonic 9 Harmonics 2nd harmonic 3rd harmonic 4th ... 8th harmonic 10 Maximum output power 824 MHz f 849 MHz POUT MAX Specifications Symbol fMIN...fMA PIN Min 824 2 5 50 1.5:1 50 2.5:1 Set VRAMP where POUT 34.2dBm into VSWR 8:1 50 Ohm load Typ Max 849 8 Unit MHz dBm TX_EN = low or high 0.2V VRAMP VRAMP MAX remarks Set VRAMP where POUT 34.2dBm into VSWR 10:1 50 Ohm load -40 -30 dBm TX_EN = low, PIN = 8dBm Measured @ high band port dBm POUT POUT dBm dBm POUT 34.2dBm dBm -25 -20 MAX @ low band port -20 -20 -10 -15 -5 34.2 32.5 35 dBm Nominal conditions dBm VBATT = 3.0V, TA = 85C 0 dBm TX_EN=High, VRAMP=0.2V, PIN=8dBm % 2.3 A POUT = POUT MAX MAX 11 12 13 14 Minimum output power Power added efficiency Power supply current Output noise power, BW=100kHz 869 MHz... 894 MHz POUT MIN PAE IBAT 45 1.3 53 1.8 DC current at POUT = POUT POUT = POUT MAX -85 -82 250 dBm f0 = 849 MHz dB/V POUT>0dBm 15 Slope POUT/VRAMP Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 4 4. GSM900 Electrical Characteristics Conditions unless otherwise stated: TA=25C, ZS=ZL=50; VBATT=3.5V; BS=low; TX_EN=high; PIN=5dBm, Duty Cycle = 25%, Pulse Width = 1154s, VRAMP= VRAMP_MAX Item # 1 2 3 Parameter Frequency range Input power Input impedance Input VSWR 4 5 Load impedance Load mismatch stability All angles All spurious < -36 dBm, RBW=3MHz 6 Load mismatch ruggedness All angles No damage or permanent degradation 7 8 Forward isolation Crossover isolation 2nd harmonic 9 Harmonics 2nd harmonic 3rd harmonic 4th ... 8th harmonic 10 Maximum output power 880 MHz f 915 MHz POUT MAX Specifications Symbol fMIN...fMA PIN Min 880 2 5 50 1.5:1 50 2.5:1 Set VRAMP where POUT 34.2dBm into VSWR 8:1 50 Ohm load Typ Max 915 8 Unit MHz dBm TX_EN = low or high 0.2V VRAMP VRAMP MAX remarks Set VRAMP where POUT 34.2dBm into VSWR 10:1 50 Ohm load -40 -30 dBm TX_EN = low, PIN = 8dBm Measured @ high band port dBm POUT POUT dBm dBm POUT 34.2dBm dBm -25 -20 MAX @ low band port -20 -20 -10 -15 -5 34.2 32.5 35 dBm Nominal conditions dBm VBATT = 3.0V, TA = 85C 0 dBm TX_EN=High, VRAMP=0.2V, PIN=8dBm % 2.3 A POUT = POUT MAX MAX 11 12 13 14 Minimum output power Power added efficiency Power supply current Output noise power, BW=100kHz 925 MHz ... 935 MHz 935 MHz ... 960 MHz POUT MIN PAE IBAT 50 1.2 58 1.7 DC current at POUT = POUT POUT = POUT MAX -80 -85 -72 -82 250 dBm f0 = 915 MHz dBm f0 = 915 MHz dB/V POUT>0dBm 15 Slope POUT/VRAMP Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 5 5. DCS Electrical Characteristics Conditions unless otherwise stated: TA=25C, ZS=ZL=50; VBATT=3.5V; BS=high; TX_EN=high; PIN=5dBm, Duty Cycle = 25%, Pulse Width = 1154s, VRAMP= VRAMP_MAX Item # 1 2 3 Parameter Frequency range Input power Input impedance Input VSWR 4 5 Load impedance Load mismatch stability All angles All spurious < -36 dBm, RBW=3MHz 6 Load mismatch ruggedness All angles No damage or permanent degradation 7 8 Forward isolation Harmonics 2nd harmonic 3rd harmonic 4th ... 8th harmonic 9 Maximum output power POUT MAX Specifications Symbol fMIN...fMA PIN Min 1710 2 5 50 1.5:1 50 2.5:1 Set VRAMP where Pout 32 dBm VSWR 8:1 into 50 Ohm load Typ Max 1785 8 Unit MHz dBm TX_EN = low or high 0.2V VRAMP VRAMP MAX remarks Set VRAMP where Pout 32 dBm VSWR 10:1 into 50 Ohm load -35 -30 dBm TX_EN = low, PIN = 8dBm dBm dBm POUT 32dBm dBm dBm Nominal conditions dBm VBATT = 3.0V, TA = 85C -20 -25 -10 -15 -5 32 30.5 33 10 Minimum output power POUT MIN -5 dBm TX_EN=High, VRAMP=0.2V, PIN = 8dBm 11 12 13 Power added efficiency Power supply current Output noise power, BW=100kHz 1805 MHz ... 1880 MHz PAE IBAT 43 0.8 50 1.3 1.5 % A POUT = POUT MAX MAX DC current at POUT = POUT POUT = POUT MAX -83 -77 290 dBm f0 = 1785MHz dB/V POUT>-5dBm 14 Slope POUT/VRAMP Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 6 6. PCS Electrical Characteristics Conditions unless otherwise stated: TA=25C, ZS=ZL=50; VBATT=3.5V; BS=high; TX_EN=high; PIN=5dBm, Duty Cycle = 25%, Pulse Width = 1154s, VRAMP= VRAMP_MAX Item # 1 2 3 Parameter Frequency range Input power Input impedance Input VSWR 4 5 Load impedance Load mismatch stability All angles All spurious < -36 dBm, RBW=3MHz 6 Load mismatch ruggedness All angles No damage or permanent degradation 7 8 Forward isolation Harmonics 2nd harmonic 3rd harmonic 4th ... 8th harmonic 9 Maximum output power POUT MAX Specifications Symbol fMIN...fMA Pin Min 1850 2 5 50 1.5:1 50 2.5:1 Set VRAMP where Pout 32 dBm VSWR 8:1 into 50 Ohm load Typ Max 1910 8 Unit MHz dBm TX_EN = low or high 0.2V VRAMP VRAMP MAX remarks Set VRAMP where Pout 32 dBm VSWR 10:1 into 50 Ohm load -35 -30 dBm TX_EN = low, PIN = 8dBm dBm dBm POUT 32dBm dBm dBm Nominal conditions dBm VBATT = 3.0V, TA = 85C -20 -25 -10 -15 -5 32 30 33 10 Minimum output power POUT MIN -5 dBm TX_EN=High, VRAMP=0.2V, PIN = 8dBm 11 12 13 Power added efficiency Power supply current Output noise power, BW=100kHz 1930 MHz ... 1990 MHz PAE IBAT 43 0.75 50 1.2 1.5 % A POUT = POUT MAX MAX DC current at POUT = POUT POUT = POUT MAX -83 -77 290 dBm f0 = 1910MHz dB/V POUT>-5dBm 14 Slope POUT/VRAMP Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 7 7. Block Diagram GSM850 / 900 in GSM850 / 900 out VRAMP Logic VBATT VCC TX_EN Power Control BS DCS / PCS in DCS / PCS out 8. Pin Out Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 8 9. Pinning TQM7M4022 Footprint Top View 1 2 16 3 4 5 6 7 17 8 9 10 11 15 12 13 14 Pin # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15, 16, 17 Description GSM850 / 900 in GND GND VRAMP VBATT TX_EN BS GND DCS / PCS in DCS / PCS out GND VCC GND GSM850 / 900 out GND Function GSM850 / GSM900 RF input Ground Ground DAC Control Signal for output power setting, nominal 0.2 .. 1.7 V Battery supply voltage, typ. 3.0 - 4.5 V, nom. 1.6A Digital Transmit Enable Signal. When activated (TX_EN = high), all bands of the PA will be enabled for operation. Band Select Pin (Low -> GSM850/GSM900 mode active; High -> DCS/PCS mode active) Ground DCS/PCS RF input DCS / PCS RF output Ground Internal Voltage Ground GSM850 / GSM900 RF output Ground Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 9 10. Package Outline (all dimensions in mm): Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 10 Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 11 11 Tape and Reel Information Module Orientation MODULE 7X7 User Direction of Feed Carrier and Cover Tape Physical Dimensions PART CAVITY PERFORATION FEATURE BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION SYMBOL D1 D0 P0 E1 T T1 A0 B0 K0 P1 P2 F C W SIZE (in) 0.059 0.059 0.157 0.069 0.012 0.002 0.291 0.291 0.079 0.472 0.079 0.295 0.524 0.630 SIZE (mm) 1.50 1.50 4.00 1.75 0.30 0.056 7.4 7.4 2.0 12.00 2.00 7.50 13.30 16.00 CARRIER TAPE COVER TAPE CAVITY THICKNESS THICKNESS LENGTH WIDTH DEPTH PITCH DISTANCE BETWEEN CENTERLINE CAVITY TO PERFORATION LENGTH DIRECTION CAVITY TO PERFORATION WIDTH DIRECTION COVER TAPE CARRIER TAPE WIDTH WIDTH Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 12 Reel Physical dimensions PART FLANGE FEATURE DIAMETER THICKNESS SPACE BETWEEN FLANGE SYMBOL A W2 W1 N C B D SIZE (in) 12.992 0.874 0.661 4.016 0.512 0.079 0.787 SIZE (mm) 330.0 22.2 16.8 102.0 13.0 2.0 20.0 HUB OUTER DIAMETER ARBOR HOLE DIAMETER KEY SLIT WIDTH KEY SLIT DIAMETER Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 13 Completed Tape and Reel Assembly Product label, Mfg Label and ESD label are placed on the flange opposite to the sprockets in the carrier tape Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (Rev 3.6 2004-08-13) All specifications subject to change without notice 14 |
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