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NTE3041 Optoisolator NPN Transistor Output
Description: The NTE3041 is an optoisolator in a 6-Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions D Guaranteed Switching Speeds Applications: D General Purpose Switching Circuits D Interfacing and Coupling Systems of Different Potentials and Impedances D Regulation Feedback Circuits D Monitor & Detection Circuits D Solid State Relays Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Input LED Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA LED Power Dissipation (With Negligible Power in Output Detector), PD . . . . . . . . . . . . . . . . . 120mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.41mW/C Output Transistor Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Detector Power Dissipation (With Negligible Power in Output Detector), PD . . . . . . . . . . . . . 150mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.76mW/C Total Device Isolation Source Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), VISO . . . . . . . . . . 7500V Total Device Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.94mW/C Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 1/16" from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +260C Note 1. Isolation Surge Voltage is an internal device dielectric breakdown rating. For this test, Pin1 and Pin2 are common, and Pin4, Pin5, and Pin6 are common.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Input LED Forward Voltage VF IF = 10mA IF = 10mA, TA = -55C IF = 10mA, TA = +100C Reverse Leakage Current Capacitance Output Transistor Collector-Emitter Dark Current ICEO ICBO V(BR)CEO V(BR)CBO V(BR)EBO hFE CCE CCB CEB IC VCE = 10V VCE = 30V, TA = +100C Collector-Base Dark Current VCB = 10V VCB = 10V, TA = +100C Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Capacitance Collector-Base Capacitance Emitter-Base Capacitance Coupled Output Collector Current IF = 10mA, VCE = 10V IF = 10mA, VCE = 10V, TA = -55C IF = 10mA, VCE = 10V, TA = +100C Collector-Emitter Saturation Voltage Turn-On Time Turn-Off Time Rise Time Fall Time Isolation Voltage Isolation Current Isolation Resistance Isolation Capacitance VCE(sat) ton toff tr tf VISO IISO RISO CISO f = 60Hz, t = 1sec VI-O = 3550Vpk V = 500V V = 0, f = 1MHz IC = 0.5mA, IF = 10mA IC = 2mA, VCC = 10V, RL = 100 10 4 4 - - - - - 7500 - 1011 - 30 - - 0.14 7.5 5.7 3.2 4.7 - - - 0.2 - - - 0.3 10 10 - - - 100 - 2.0 mA mA mA V s s s s V A IC = 1mA IC = 100A IE = 100A IC = 2mA, VCE = 5V VCE = 5V, f = 1MHz VCB = 0, f = 1MHz VEB = 0, f = 1MHz - - - - 30 70 7.0 - - - - 1 - 0.2 100 45 100 7.8 400 7 19 9 50 500 20 - - - - - - - - pF pF pF nA A nA nA V V V IR CJ VR = 6V V = 0, f = 1MHz 0.8 0.9 0.7 - - 1.15 1.3 1.05 - 18 1.5 1.7 1.4 10 - V V V A pF Symbol Test Conditions Min Typ Max Unit
pF
Pin Connection Diagram
Anode Cathode N.C.
1 2 3
6
Base
5 Collector 4 Emitter
6
5
4
1
2
3
.260 (6.6) Max
.070 (1.78) Max .350 (8.89) Max .200 (5.08) Max .300 (7.62)
.350 (8.89) Max
.085 (2.16) Max
.100 (2.45)

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