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| NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 1 APRIL 94 FEATURES * 300 Volt VCEO * 3 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage * Ptot= 1.2 Watt ZTX857 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg 330 300 6 5 3 1.58 1.2 E-Line TO92 Compatible VALUE UNIT V V V A A W W C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1K IEBO VCE(sat) 50 80 140 170 870 3-303 MIN. 330 330 300 6 TYP. 475 475 350 8 50 1 50 1 10 100 140 200 250 1000 MAX. UNIT V V V V nA nA nA mV mV mV mV mV CONDITIONS. IC=100A IC=1A, RB 1K IC=10mA* IE=100A VCB=300V VCB=300V, Tamb=100C VCB=300V VCB=300V, Tamb=100C VEB=6V IC=0.5A, IB=50mA* IC=1A, IB=100mA* IC=2A, IB=200mA* IC=3A, IB=600mA* IC=2A, IB=200mA* A A Base-Emitter Saturation Voltage VBE(sat) ZTX857 ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL VBE(on) hFE 100 100 15 MIN. TYP. 810 200 200 25 15 80 11 100 5300 MAX. 950 300 MHz pF ns ns UNIT mV CONDITIONS. IC=2A, VCE=5V* IC=10mA, VCE=5V IC=500mA, VCE=10V* IC=2A, VCE=10V* IC=3A, VCE=10V* IC=100mA, VCE=10V f=100MHz VCB=20V, f=1MHz IC=250mA, IB1=25mA IB2=25mA, VCC=50V fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance: Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT C/W C/W Max Power Dissipation - (Watts) 4.0 Thermal Resistance (C/W) 150 t1 D.C. D=t1/tP 3.0 Ca se 100 te tP D=0.6 2.0 m 1.0 Amb ient te mpe ratu -40 -20 0 20 40 pe ra tu re 50 D=0.2 D=0.1 re 60 80 100 120 140 160 180 200 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-304 ZTX857 TYPICAL CHARACTERISTICS 0.8 1.6 hFE - Normalised Gain 300 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 VCE=10V VCE=2V 100 0.6 200 0.4 IC/IB=10 IC/IB=50 0.2 0 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC VCE=5V 2.0 2.0 VBE(sat) - (Volts) 1.5 VBE - (Volts) IC/IB=10 IC/IB=50 1.5 1.0 1.0 0.5 0.0001 0.001 0.01 0.1 1 10 0.5 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 Single Pulse Test at Tamb=25C VBE(on) v IC IC - Collector Current (Amps) 1 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.01 0.1 1 10 100 1000 VCE - Collector Voltage (Volts) Safe Operating Area 3-305 hFE - Typical Gain VCE(sat) - (Volts) 1.4 |
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