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| AP70T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Low Gate Charge Fast Switching RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 9m 60A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP70T03GJ) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 20 60 43 195 53 0.36 -55 to 175 -55 to 175 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 110 Units /W /W Data and specifications subject to change without notice 200823053-1/4 AP70T0G3H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.03 35 17 5 10 13.5 8 105 22 9 245 170 Max. Units 9 18 3 1 250 100 27 22 V V/ m m V S uA uA nA nC nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=33A VGS=4.5V, ID=20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=175 C) o o VDS=VGS, ID=250uA VDS=10V, ID=33A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= 20V ID=33A VDS=20V VGS=4.5V VDD=15V,VGS=0V VDS=15V ID=33A RG=3.3,VGS=10V RD=0.45 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Output Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1485 2400 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=33A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/s Min. - Typ. 27 20 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP70T03GH/J 200 120 T C =25 C ID , Drain Current (A) 150 o 10V 8.0V 90 T C =175 o C ID , Drain Current (A) 10V 8.0V 6.0V 6.0V 100 60 50 V G =4.0V 30 V G =4.0V 0 0.0 1.5 3.0 4.5 0 0.0 1.5 3.0 4.5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 2 I D =20A T C =25 1.6 40 I D =33A V G =10V Normalized RDS(ON) RDS(ON) (m ) 1.2 20 0.8 0 0 4 8 12 16 0.4 -50 25 100 175 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 1000 100 2 IS(A) 10 T j =175 o C T j =25 o C VGS(th) (V) 1.5 1 1 0.1 0.5 0 0.5 1 1.5 -50 25 100 175 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C ) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP70T03GH/J 12 10000 f=1.0MHz I D =33A VGS , Gate to Source Voltage (V) 9 C (pF) V DS =16V V DS =20V V DS =24V C iss 1000 6 3 C oss C rss 0 0 5 10 15 20 25 30 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor = 0.5 10us 100 0.2 ID (A) 100us 0.1 0.1 0.05 0.02 0.01 Single Pulse 10 1ms T C =25 C Single Pulse o PDM t T Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 10ms 100ms DC 10 100 1 0.1 1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) t f Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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