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| Product Description Sirenza Microdevices SNA-500 is a GaAs monolithic broadband amplifier in die form. This amplifier provides 19dB of gain when biased at 65mA and 5.0V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias flexibility and stability. These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. its small size (0.4mm x 0.4mm) and gold metallization make it an ideal choice for use in hybrid circuits. The SNA-500 is available in gel paks at 100 devices per container. Also available in packaged form (SNA-576 and SNA586). Output Power vs. Frequency 22 20 18 16 14 12 0.1 1 2 3 4 5 SNA-500 DC-3 GHz, Cascadable GaAs MMIC Amplifier Product Features Cascadable 50 Ohm Gain Block 19dB Gain, +18dBm P1dB 1.5:1 Input and Output VSWR Operates From Single Supply Chip Back Is Ground Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS dB GHz IF Amplifier Wireless Data, Satellite Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 2400 M Hz Sy mbol P1dB Parameter Output Pow er at 1dB Compression Units dBm dBm dBm dBm dBm dBm dB dB dB M Hz Min. Ty p. 17.6 18.4 18.4 32.5 31.6 31.6 19.6 18.1 17.4 5000 1.4:1 1.4:1 22.3 21.6 21.3 4.0 Max. OIP3 Output Third Order Intercept Point S21 Bandw idth VSWRIN VSWROUT S12 NF VD ID RTH, j-b Small Signal Gain (Determined by S11, S22 Values) Input VSWR Output VSWR Reverse Isolation Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction -backsided) DC-5000 M Hz DC-5000 M Hz 850 M Hz 1950 M Hz 2400 M Hz 1950 M Hz dB dB dB dB V mA o 4.4 58 4.9 65 200 5.4 72 C/W Test Conditions: VS = 8 V RBIAS = 47 Ohms ID = 65 mA Typ. TL = 25C OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-102436 Rev A Preliminary SNA-500 DC-3 GHz Cascadable MMIC Amplifier Typical Performance at 25 C (Vds = 5.0V, Ids = 65mA) |S11| vs. Frequency 0 -5 22 20 18 |S21| vs. Frequency dB -10 -15 -20 0.1 1 2 3 4 5 dB 16 14 12 0.1 1 2 3 4 5 GHz GHz |S12| vs. Frequency 0 -5 -10 -15 -20 -25 0.1 1 2 3 4 5 0 -5 |S22| vs. Frequency dB dB -10 -15 -20 GHz 0.1 1 2 3 4 5 GHz Noise Figure vs. Frequency 6 TOIP vs. Frequency 38 36 5 dB 4 dBm 34 32 30 3 0.1 1.0 2 3 4 5 28 0.1 1 2 3 4 5 GHz GHz Absolute Maximum Ratings Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Pow er Max. Junction Temp. (TJ) Operating Temp. Range (TL) Absolute Limit 130 mA 6V +23 dBm +200C -40C to +85C +150C Max. Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-102436 Rev A Preliminary SNA-500 DC-3 GHz Cascadable MMIC Amplifier Typical Application Circuit R BIAS 1 uF 1000 pF Application Circuit Element Values Reference Designator Frequency (Mhz) 500 850 1950 2400 3500 CB 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH CD LC CD LC RF in CB 1 4 SNA-500 3 CB RF out Recommended Bias Resistor Values for ID=65mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 8V 47 9V 62 10 V 82 12 V 110 2 Note: RBIAS provides DC bias stability over temperature. Simplified Schematic of MMIC (above configuration used for S-parameter data) Suggested Bonding Arrangement For recommended handling, die attach, and bonding methods, see the following application note at www.sirenza.com. AN-041 (PDF) Handling of Unpackaged Die Part Number Ordering Information Caution: ESD sensitive Part Number SNA-500 Gel Pack 100 pcs. per pack Appropriate precautions in handling, packaging and testing devices must be observed. Die are shipped per Sirenza application note AN-039 Visual Criteria For Unpackaged Die 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-102436 Rev A |
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