 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMVL809T1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical tuning methods. 4.5 - 6.1 pF VOLTAGE VARIABLE CAPACITANCE DIODE 1 * Controlled and Uniform Tuning Ratio * Surface Mount Package * Available in 8 mm Tape and Reel * Device Marking: 5K 1 CATHODE 2 ANODE 2 PLASTIC, CASE 477 SOD- 323 ORDERING INFORMATION Device MMVL809T1 Package SOD-323 Shipping 3000 / Tape & Reel MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Value 20 20 Max 200 1.57 635 150 Unit Vdc mAdc Unit mW mW/C C/W C THERMAL CHARACTERISTICS RJA TJ, Tstg *FR-4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse BreakdownVoltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 15 Vdc) Symbol V(BR)R IR Min 20 -- Typ -- -- Max -- 50 Unit Vdc nAdc Ct, Diode Capacitance Q, Figure of Merit VR = 2.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc pF f = 500 MHz Device Min Nom Max Min MMVL809T1 4.5 5.3 6.1 75 1. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc. CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min Max 1.8 2.6 MMVL809T1-1/2 LESHAN RADIO COMPANY, LTD. MMVL809T1 TYPICAL CHARACTERISTICS 10 9 CT , DIODE CAPACITANCE (pF) 1000 Q, FIGURE OF MERIT 8 7 6 5 4 3 2 1 0 0.5 1 2 3 4 5 8 10 15 VR = 3 Vdc TA = 25C 100 10 0.1 1.0 f, FREQUENCY (GHz) 10 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure of Merit R S , SERIES RESISTANCE (MHz) VR = 3.0 Vdc f = 1.0 MHz 800 CT , DIODE CAPACITANCE (NORMALIZED) 1000 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz 600 400 0 0.2 0.4 0.6 0.8 1.0 1.2 f, FREQUENCY (GHz) TA, AMBIENT TEMPERATURE (C) Figure 3. Series Resistance Figure 4. Diode Capacitance MMVL809T1-2/2 |
Price & Availability of MMVL809T1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |