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| CEM4804 PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 7.9A , RDS(ON)=20m @VGS=10V. RDS(ON)=30m @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package. 1 2 3 4 D1 8 D1 7 D2 6 D2 5 SO-8 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 20 7.9 24 2 2 -55 to 150 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 62.5 C/W 5-98 CEM4804 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Symbol Condition VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 6.3A VGS = 4.5V, ID = 5A VDS = 5V, VGS = 10V VDS =15V, ID = 6A Min Typ C Max Unit 5 30 1 100 1 16 24 10 7 857 343 105 3 20 30 V A nA V m m A S ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS c PF PF PF VDS =15V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = 1A, VGS = 10V, RGEN = 6 22 34 43 18 28 45 70 90 35 35 ns ns ns ns nC nC nC VDS =10V, ID = 3.5A, VGS =10V 5-99 4 7.5 CEM4804 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =2A Min Typ Max Unit 1.3 V C DRAIN-SOURCE DIODE CHARACTERISTICS b Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 15 VGS=10,8,6,5V 16 VGS=4V 12 ID, Drain Current(A) ID, Drain Current (A) 12 9 8 6 25 C 3 Tj=125 C 1.0 1.5 2.0 -55 C 2.5 3.0 4 VGS=3V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1200 1000 Figure 2. Transfer Characteristics 1.80 1.60 1.40 1.20 1.00 0.80 0.60 -50 -25 0 25 50 75 100 125 150 ID=6.3A VGS=10V C, Capacitance (pF) Ciss 800 600 Coss 400 200 0 0 5 10 15 20 25 30 Crss VDS, Drain-to Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature 5-100 CEM4804 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.60 1.40 1.20 1.00 0.80 0.60 0.40 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A 1.15 ID=250 A 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 5 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 20 Figure 6. Breakdown Voltage Variation with Temperature 50 gFS, Transconductance (S) Is, Source-drain current (A) 12 16 12 8 4 VDS=10V 0 0 3 6 9 10 1.0 0.1 0.6 0.8 1.0 1.2 1.4 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 10 VGS, Gate to Source Voltage (V) Figure 8. Body Diode Forward Voltage Variation with Source Current 8 6 4 2 0 VDS=15V ID=3.5A ID, Drain Current (A) 10 1 RD S(O N) Lim it 1ms 10ms 100ms 1s 10s DC 10 0 10 -1 -2 10 TA=25 C Tj=150 C Single Pulse 10 1 10 0 10 1 0 8 16 24 32 10 -1 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 9. Gate Charge 5-101 Figure 10. Maximum Safe Operating Area CEM4804 VDD t on toff tr 90% 5 VGS RGEN V IN D G RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 10 2 0 r(t),Normalized Effective Transient Thermal Impedance 1 D=0.5 Duty Cycle=0.5 0.2 10 -1 0.1 0.2 0.05 0.1 10 -2 0.1 0.02 0.05 0.01 0.02 Single Pulse Single Pulse PDM t1 PDM t2 t1 t2 1. R JA (t)=r (t) *JA (t)=r (t) * R JA 1. R R JA 2. R JA=See R JA=See Datasheet 2. Datasheet P* R JA (t) 3. TJM-TA =3. TJM-TA = PDM* R JA (t) 4. Duty Cycle, D=t1/t2 D=t1/t2 4. Duty Cycle, 10 10 -2 -2 0.01 10 -3 10 -4 10 10 -3-3 10 -1 10 -1 10 0 1 10 1 10 10 2 100 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 5-102 |
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