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| ZXSDS2M832 MPPSTM Miniature Package Power Solutions DUAL 60V, 1.65A SCHOTTKY DIODE COMBINATION SUMMARY Schottky Diode - VR = 60V; VF = 600mV(@1A); IC=1.65A DESCRIPTION Packaged in the new innovative 3x2 MLP (Micro Leaded Package) outline, this combination dual comprises two 60V 0.9A Schottky barrier diodes. This excellent combination provides users with highly efficient performance in applications including DC-DC converters and charging circuits. Additionally users gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Lower Package Height (0.9mm nom) Reduced component count MLP832 FEATURES * Extremely Low VF, fast switching Schottky * IF= 1.65A Continuous Forward Current * 3mm x 2mm MLP APPLICATIONS * DC-DC Converters * DC-DC Modules * Mosfet gate drive circuits * Charging circuits * Mobile Phones * Motor Control PINOUT ORDERING INFORMATION DEVICE ZXSDS2M832TA ZXSDS2M832TC REEL SIZE 7" 13" TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units Bottom View DEVICE MARKING * DS2 ISSUE 2 June 2003 1 SEMICONDUCTORS ZXSDS2M832 ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse Voltage Forward Voltage @ I F = 1000mA Forward Current Average Forward Current D=50%, t<=300us Non Repetitive Forward Current t<=100us Non Repetitive Forward Current t<=10ms Power Dissipation at TA=25C (a)(f) Linear Derating Factor Power Dissipation at TA=25C (b)(f) Linear Derating Factor Power Dissipation at TA=25C (c)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(g) Linear Derating Factor Power Dissipation at TA=25C (e)(g) Linear Derating Factor Storage Temp, Range Operating & Storage Temp, Range Tstg Tj PD PD PD PD PD PD SYMBOL VR VF IF I FAV I FSM LIMIT 60 600 1.65 1.24 16.8 5.63 1.2 12 2 20 0.8 8 0.9 9 1.36 13.6 2.4 24 -55 to+150 -55 to+125 UNIT V mV A A A A W mW/C W mW/C W mW/C W mW/C W mW/C W mW/C C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a)(f) Junction to Ambient (b)(f) SYMBOL R JA R JA R JA R JA R JA R JA VALUE 83.3 51 125 111 73.5 41.7 UNIT C/W C/W C/W C/W C/W C/W Junction to Ambient (c)(f) Junction to Ambient (d)(f) Junction to Ambient (d)(g) Junction to Ambient (e)(g) NOTES (a) For a dual device surface mounted on 8 sq. cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the center line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device. (f) For dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz weight, 1mm wide tracks and one half of the device active is Rth= 250C/W giving a power rating of Ptot=400mW. ISSUE 2 June 2003 SEMICONDUCTORS 2 ZXSDS2M832 TYPICAL CHARACTERISTICS ISSUE 2 June 2003 3 SEMICONDUCTORS ZXSDS2M832 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Reverse Breakdown Voltage Forward Voltage V(BR)R VF 60 80 245 275 330 395 455 510 620 500 Reverse Current Diode Capacitance Reverse Recovery Time IR CD t rr 50 17 12 280 320 390 470 530 600 740 100 V IR = 300A* SYMBOL MIN. TYP. MAX. UNIT CONDITIONS mV I F = 50mA* mV I F = 100mA* mV I F = 250mA* mV I F = 500mA* mV I F = 750mA* mV I F = 1000mA* mV I F = 1500mA* mV I F = 1000mA*, T A = 100C A pF ns V R = 45V f = 1MHz, V R = 25V Switched from I F = 500mA to I R = 500mA Measured at I R = 50mA NOTES * Measured under pulsed conditions ISSUE 2 June 2003 SEMICONDUCTORS 4 ZXSDS2M832 TYPICAL CHARACTERISTICS ISSUE 2 June 2003 5 SEMICONDUCTORS ZXSDS2M832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimetres DIM Min A A1 A2 A3 b b1 D D2 D3 0.80 0.00 0.65 0.15 0.24 0.17 Max 1.00 0.05 0.75 0.25 0.34 0.30 Min 0.031 0.00 0.0255 0.006 0.009 0.0066 Max 0.039 0.002 0.0295 0.0098 0.013 0.0118 e E E2 E4 L L2 r Inches DIM Min Max Min Max 0.65 REF 2.00 BSC 0.43 0.16 0.20 0.63 0.36 0.45 0.125 0.0256 BSC 0.0787 BSC 0.017 0.006 0.0078 0.00 0.0249 0.014 0.0157 0.005 Millimetres Inches 3.00 BSC 0.82 1.01 1.02 1.21 0.118 BSC 0.032 0.0397 0.040 0.0476 0.075 BSC 0 12 - 0.0029 BSC 0 12 - - - (c) Zetex plc 2003 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 June 2003 SEMICONDUCTORS 6 |
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