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VG101
Product Features
* * * * *
The Communications Edge TM Product Information
Cellular-band Variable Gain Amplifier
Product Description
The VG101 is a cellular-band high dynamic range variable gain amplifier (VGA) packaged in a low profile Pb-free / RoHS-compliant surface-mount leadless package that measures 6 x 6 mm square. The +22 dBm output compression point and +40 dBm output intercept point of the amplifier are maintained over the entire attenuation range, making the VG101 ideal for use in transmitter and receiver AGC circuits and as a variable gain stage following an LNA in high dynamic range receiver front ends. Superior thermal design allows the product to have a minimum MTTF rating of 1000 years at a mounting temperature of +85 C. All devices are 100% RF & DC tested and packaged on tape and reel for automated surface-mount assembly.
Functional Diagram
Gain Ctrl GND GND 7 GND 8 GND 9 GND 10 RF IN 11 GND 12 GND 13 GND 14 15 GND 16 GND 17 GND 18 GND 19 N/C 20 GND 21 MATCH 6 5 4 3 GND 2 GND GND 1 28 GND 27 GND 26 GND 25 RF OUT 24 GND 23 GND 22 GND N/C
750 - 1000 MHz bandwidth 28 dB Attenuation Range +40 dBm Output IP3 +22 dBm P1dB Constant IP3 & P1dB over attenuation range * Single voltage supply * Pb-free 6mm 28-pin QFN package * MTTF > 1000 years
Amp
Variable Attenuator
Applications
* Xmit & Rcv AGC circuitry for mobile infrastructure
Function Gain Control No Connect RF Input Interstage Match RF Output / DC bias Ground
Pin No 5 7, 19 11 21 25 All other pins Backside copper
Specifications (1)
Parameter
Operational Bandwidth Test Frequency Gain at min. attenuation Input Return Loss Output Return Loss Output P1dB Output IP3 Noise Figure at min. attenuation Gain Variation Range Gain Variation Control Voltage, VCTRL Group Delay Supply Voltage Operating Amplifier Current Range Gain Control Pin Current
Units
MHz MHz dB dB dB dBm dBm dB dB V ns V mA mA
Min
750 15
Typ
900 16 12 10 +22 +40 3 28.7 1 +5 150
Max
1000 See note 1
Conditions
+37 25.5 0
33.5 4.5
See note 2 VCTRL = 0 V See note 3 See note 1 Frequency = 900 MHz Pin 25 VCTRL = 4.5 V. See note 1.
120
180 20
1. Test conditions unless otherwise noted: 25C, Vdd = +5 V in a tuned application circuit. Vctrl is the control voltage through a BJT transistor and a 100 dropping resistor as shown in the same application circuit. 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. The gain variation range is measured as the difference in gain with Vctrl = 0V and Vctrl = 4.5V at 0.9 GHz.
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature Amplifier Supply Voltage (pin 25) Pin 5 (Gain Control) Current RF Input Power (continuous) Junction Temperature -40 to +85 C -55 to +125 C +6 V 30 mA +12 dBm +220 C
Rating
Ordering Information
Part No.
VG101* VG101-F VG101-PCB
*
Description
Cellular-band Variable Gain Amplifier
(tin-lead 6mm QFN package)
Cellular-band Variable Gain Amplifier
(lead-free/RoHS-compliant QFN package)
Fully Assembled Application Board
Operation of this device above any of these parameters may cause permanent damage.
This package is being phased out in favor of the lead-free/RoHS-compliant package type which is backwards compatible for existing designs. Refer to WJPCN06MAY05TC1 on the WJ website. Specifications and information are subject to change without notice
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 1 of 5
June 2005
VG101
The Communications Edge TM Product Information
Cellular-band Variable Gain Amplifier
Application Circuit: 750 - 1000 MHz (VG101-PCB)
Circuit Board Material: .014" FR-4, 4 layers, .062" total thickness * The amplifier is biased through Pin 25 and should be connected directly into a voltage regulator. * Distances are shown from the edge-to-edge for the land pattern.
Ref. Des. C1, C3 C2, C4 C5 L1 L2 L3 L4 R1 R3 R4 R5 Q1 U1
OIP3 vs. Output Power 45 40 35 30 +25C 25 -4 0 4 8 Output Power (dBm) 12 16 -40C +85C
25 0 2 4 6 Attenuation (dB) 8 10
frequency = 900, 910 MHz, 0dB Atten.
Bill of Materials Description 47 pF Chip Capacitor 0.01 F Chip Capacitor 1 pF Chip Capacitor 82 nH Chip Inductor 39 nH Chip Inductor 2.7 nH Chip Inductor 8.2 nH Chip Inductor 100 Chip Resistor 2.7 Chip Resistor 4.7 Chip Resistor 47 Chip Resistor MMBT2222 Motorola Transistor VG101 Variable Gain Amplifier
Size 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 SOT-23 QFN 6x6
OIP3 vs. Attenuation Setting 45 40 35
frequency = 900, 910 MHz, 25C, 10 dBm/tone
ACPR vs. Channel Power
-40
880 MHz, IS-95, 9 Ch. Forward, 885 kHz offset, 30 kHz Meas BW, 25C
-50
0dB Attn 5dB Attn 10dB Attn
-60
30
-70 12 13 14 15 16
Output Channel Power (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 5 June 2005
VG101
20 15 10 5 0 -5 -10 -15 -20 0 5 10 15
+25C -40C
The Communications Edge TM Product Information
Cellular-band Variable Gain Amplifier
VG101-PCB Application Circuit Performance (cont'd)
Gain vs. Pin 5 Attn. Control Current Normalized Gain vs. Pin 5 Control Current Noise Figure vs. Frequency
Vctrl=0V (Minimum attenuation)
40
+85C
35 30 25 20 15 10 5 0
+25C
-40C
+85C
10
-40C
8 6 4 2 0
+25C
+85C
20
25
0.1
1.0
10.0
100.0
700
750
800
850
900
950
1000
Pin 5 Attenuation Control Current (mA)
S21 vs. Frequency
Vctrl=0V (Minimum attenuation), +25 C
Pin 5 Attenuation Control Current (mA)
S11, S22 vs. Frequency
Vctrl=0V (Minimum attenuation), +25 C
Frequency (MHz)
P1dB vs. Frequency
Vctrl=0V (Minimum attenuation)
16 15 S 1 1 , S 2 2 (d B ) S 2 1 (d B ) 14 13 12 11 700
0
26
S11
-5 -10 -15 -20 -25 700
S22
24 22 20 18
-40C
16 750 800 850 900 950 1000 850 875 750 800 850 900 950 1000
+25C
900
+85C
925 950
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
S21 vs. Frequency vs. Control Voltage
S11 vs. Frequency vs. Control Voltage
S22 vs. Frequency vs. Control Voltage
20 10 S 2 1 (d B ) 0 -10 -20 750
Vctrl=0V Vctrl=2V Vctrl=4V Vctrl=1V
0
Vctrl=0V Vctrl=1V Vctrl=3V Vctrl=4.5V
0
Vctrl=0V Vctrl=1V Vctrl=3V Vctrl=4.5V Vctrl=2V Vctrl=4V
-5 S 1 1 (d B ) -10 -15 -20 -25 750
-5 S 2 2 (d B ) -10 -15 -20 -25 750
Vctrl=2V Vctrl=4V
Vctrl=3V Vctrl=4.5V
800
850
900
950
1000
800
850
900
950
1000
800
850
900
950
1000
Frequency (MHz)
Frequency (MHz)
Ictrl vs. Vpin5 3.0 2.5 V p in 5 (V )
Frequency (MHz)
Ictrl vs. Vctrl
Vctrl, Vpin5 vs. Ictrl
6 5 V c trl (V ) 4 3 2 Vctrl vs Ictrl 1 0 0 5 10 Ictrl (mA) 15 20 V5 vs Ictrl 0.5 0.0
Ic trl (m A )
1.5 1.0
0.0
0.5
1.0
1.5 Vpin5 (V)
2.0
2.5
3.0
Ic trl (m A )
2.0
18 16 14 12 10 8 6 4 2 0
18 16 14 12 10 8 6 4 2 0 0 1 2 Vctrl (V) 3 4 5
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 5 June 2005
VG101
The Communications Edge TM Product Information
Cellular-band Variable Gain Amplifier
VG101 Mechanical Information
This package may contain lead-bearing materials. The plating material on the pins is SnPb.
Outline Drawing
Product Marking
The component will be lasermarked with a "VG101" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the "Application Notes" section.
ESD / MSL Information
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 Level 1 at +250 C convection reflow JEDEC Standard J-STD-020
Mounting Configuration / Land Pattern
MSL: Standard:
Functional Pin Layout
Gain Ctrl GND GND 7 GND 8 GND 9 GND 10 RF IN 11 GND 12 GND 13 GND 14 15 GND 16 GND 17 GND 18 GND 19 N/C 20 GND 21 MATCH 6 GND GND 2 5 4 3 GND 1 28 GND 27 GND 26 GND 25 RF OUT 24 GND 23 GND 22 GND N/C
Amp
Variable Attenuator
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2)
MTTF vs. GND Tab Temperature
1000
Rating
-40 to +85 C 59 C / W 129 C
100
1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +5V, 150 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 C.
10
1 60 70 80 90 100 Tab Temperature (C) 110
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14
FUNCTION GND GND GND GND Gain control pin GND N/C GND GND GND RF Input GND GND GND
Pin 15 16 17 18 19 20 21 22 23 24 25 26 27 28
FUNCTION GND GND GND GND N/C GND Interstage Match GND GND GND RF Output / Bias GND GND GND
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 5 June 2005
VG101
The Communications Edge TM Product Information
Cellular-band Variable Gain Amplifier
VG101-F Mechanical Information
This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260C reflow temperature) and leaded (maximum 245C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Outline Drawing
Product Marking
The component will be lasermarked with a "VG101F" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the "Application Notes" section.
ESD / MSL Information
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101
Mounting Configuration / Land Pattern
MSL Rating: Level 2 at +260C convection reflow Standard: JEDEC Standard J-STD-020
Functional Pin Layout
Gain Ctrl GND GND 7 GND 8 GND 9 GND 10 RF IN 11 GND 12 GND 13 GND 14 15 GND 16 GND 17 GND 18 GND 19 N/C 20 GND 21 MATCH 6 GND GND 2 5 4 3 GND 1 28 GND 27 GND 26 GND 25 RF OUT 24 GND 23 GND 22 GND N/C
Amp
Variable Attenuator
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2)
MTTF vs. GND Tab Temperature
1000
Rating
-40 to +85 C 59 C / W 129 C
100
1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +5V, 150 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 C.
10
1 60 70 80 90 100 Tab Temperature (C) 110
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14
FUNCTION GND GND GND GND Gain control pin GND N/C GND GND GND RF Input GND GND GND
Pin 15 16 17 18 19 20 21 22 23 24 25 26 27 28
FUNCTION GND GND GND GND N/C GND Interstage Match GND GND GND RF Output / Bias GND GND GND
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 5 June 2005

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