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| SI6434DQ Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 0.042 @ VGS = 4.5 V rDS(on) (W) 0.028 @ VGS = 10 V ID (A) "5.6 "4.5 D TSSOP-8 D S S G 1 2 3 4 Top View S* N-Channel MOSFET D SI6434DQ 8 7 6 5 D S S D G * Source Pins 2, 3, 6 and 7 must be tied common. ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C ID TA = 70_C IDM IS PD TJ, Tstg Symbol VDS VGS Limit 30 "20 "5.6 "4.4 "30 1.25 1.5 Unit V A W 1.0 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70178 S-49534--Rev. D, 06-Oct-97 www.Vishay Siliconix.com S FaxBack 408-970-5600 Symbol RthJA Limit 83 Unit _C/W 1 SI6434DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On State Resistancea Drain-Source On-State Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 5.6 A VGS = 4.5 V, ID = 3.5 A VDS = 15 V, ID = 5.6 A IS = 1.25 A, VGS = 0 V 20 0.022 0.030 14 0.75 1.1 0.028 0.042 W S V 1 "100 1 25 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.25 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V RG = 6 W A V, VDS = 15 V, VGS = 10 V ID = 5.6 A V V, 56 18 3.3 2.6 9 12 38 19 45 15 20 55 28 ns 29 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.Vishay Siliconix.com S FaxBack 408-970-5600 2 Document Number: 70178 S-49534--Rev. D, 06-Oct-97 SI6434DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 25 4V I D - Drain Current (A) 25 30 Transfer Characteristics I D - Drain Current (A) 20 20 15 15 10 2, 1 V 10 TC = 125_C 5 25_C -55_C 0 5 3V 0 0 1 2 3 4 5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 1600 1400 r DS(on) - On-Resistance ( W ) 0.04 C - Capacitance (pF) VGS = 4.5 V 0.03 VGS = 10 V 0.02 1200 1000 800 600 400 200 0 0 6 12 18 24 30 0 0 5 Crss Capacitance Ciss Coss 0.01 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5.6 A V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance ( W ) (Normalized) 8 12 16 20 8 VDS = 15 V ID = 5.6 A 6 1.6 1.2 4 0.8 2 0 0 4 0.4 -50 0 50 100 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70178 S-49534--Rev. D, 06-Oct-97 www.Vishay Siliconix.com S FaxBack 408-970-5600 3 SI6434DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 20 r DS(on) - On-Resistance ( W ) 0.08 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 TJ = 150_C 0.06 0.04 ID = 5.6 A 0.02 TJ = 25_C 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.2 -0.0 -0.2 -0.4 -0.6 10 -0.8 -1.0 -50 ID = 250 mA 40 50 Single Pulse Power TC = 25_C Single Pulse V GS(th) Variance (V) Power (W) 30 20 0 0 50 TJ - Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (sec) www.Vishay Siliconix.com S FaxBack 408-970-5600 4 Document Number: 70178 S-49534--Rev. D, 06-Oct-97 |
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