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PD - 94643A
HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-1)
Product Summary
Part Number
IRF7N1405 BVDSS
IRF7N1405 55V, N-CHANNEL
55V
RDS(on) ID 0.0053 55A*
Seventh Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
SMD-1
Features:
n n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Surface Mount
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Package Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 55* 55* 220 100 0.8 20 245 55 10 1.8 -55 to 150 300 (for 5s) 2.6 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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03/16/07
IRF7N1405
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
55 -- -- 2.0 68 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.061 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.0053 4.0 -- 25 250 100 -100 200 40 80 20 90 200 150 -- V V/C V S A
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 55A A VDS = VGS, ID = 250A VDS =25V, IDS = 55A A VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 55A VDS = 44V VDD = 28V, ID = 55A, VGS = 10V, RG = 2.4
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD l Ciss C oss C rss
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to the center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
5100 1290 300
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 55* 220 1.3 130 380
Test Conditions
A
V ns nC Tj = 25C, IS = 55A, VGS = 0V A Tj = 25C, IF = 55A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max
-- -- 1.25
Units
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the International Rectifier Website. For footnotes refer to the last page
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IRF7N1405
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
ID, Drain-to-Source Current (A)
BOTTOM
100
ID, Drain-to-Source Current (A)
100 4.5V
4.5V 20s PULSE WIDTH Tj = 25C 10 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
20s PULSE WIDTH Tj = 150C 10 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 55A
ID, Drain-to-Source Current ( )
2.0
100
T J = 150C
1.5
T J = 25C
1.0
0.5
10 4 4.5 5
VDS = 25V 15 20s PULSE WIDTH 5.5 6 6.5 7
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7N1405
9000
VGS , Gate-to-Source Voltage (V)
7500
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
12 ID= 55A VDS = 44V VDS = 28V VDS= 11V
C, Capacitance (pF)
6000
Ciss
8
4500
3000
Coss Crss
4
1500
FOR TEST CIRCUIT SEE FIGURE 13 0 0 20 40 60 80 100 120 140 Q G Total Gate Charge (nC)
0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current ( )
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
T J = 150C
10
T J = 25C
ID, Drain-to-Source Current (A)
100 100s 1ms
10 Tc = 25C Tj = 150C Single Pulse 0.1 1 10
1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-to-Drain Voltage (V)
10ms
1
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRF7N1405
120
LIMITED BY PACKAGE
100
V DS V GS RG
RD
D.U.T.
+
ID , Drain Current (A)
80
-V DD
VGS
60
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
VDS 90%
20
0
25
50
75
100
125
150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7N1405
500
EAS , Single Pulse Avalanche Energy (mJ)
15V
400
ID 24.6A 34.8A BOTTOM 55A TOP
VDS
L
DRIVER
300
RG
D.U.T.
IAS tp
+ V - DD
VGS 20V
A
200
0.01
100
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
0
25
Starting TJ , Junction Temperature ( C)
50
75
100
125
150
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
10V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRF7N1405
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L= 0.16mH Peak I AS = 55A, V GS = 10V, RG= 25
ISD 55A, di/dt 220A/s, Pulse width 300 s; Duty Cycle 2%
VDD 55V, TJ 150C
Case Outline and Dimensions -- SMD-1
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2007
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