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MITSUBISHI HVIGBT MODULES
CM2400HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM2400HC-34H
q IC ................................................................ 2400A q VCES ....................................................... 1700V q Insulated Type q 1-element in a Pack q AISiC Baseplate q Soft Reverse Recovery Diode
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
570.1
190 0.5 1710.1 570.1
570.1
6 - M8 NUTS C 20 -0.2
+0.1
C
C
C
G E 124 0.1 140 0.5 40 0.2 E E E
C
C
C
CM C
E
E
E
CIRCUIT DIAGRAM
E
G
20.25 0.2 41.25 0.3 3 - M4 NUTS 79.4 0.3 61.5 0.3
screwing depth min. 7.7
8 - 7 0.1 MOUNTING HOLES
screwing depth min. 16.5
61.5 0.3 13 0.2
15 0.2 40 0.3 5.2 0.2
5 0.15
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
29.5 0.5
38 +1 0
28 +1 0
MITSUBISHI HVIGBT MODULES
CM2400HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25C VCE = 0V, Tj = 25C TC = 80C Pulse Pulse TC = 25C, IGBT part Conditions Ratings 1700 20 2400 4800 2400 4800 17800 -40 ~ +150 -40 ~ +125 -40 ~ +125 4000 10 Unit V V A A A A W C C C V s
(Note 1) (Note 1)
RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1150V, VCES 1700V, VGE = 15V Tj = 125C
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg VEC (Note 2) td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec(Note 2)
Note 1. 2. 3. 4.
Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Emitter-collector voltage Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy
Conditions VCE = VCES, VGE = 0V, Tj = 25C IC = 240mA, VCE = 10V, Tj = 25C VGE = VGES, VCE = 0V, Tj = 25C IC = 2400A, VGE = 15V, Tj = 25C IC = 2400A, VGE = 15V, Tj = 125C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25C VCC = 850V, IC = 2400A, VGE = 15V, Tj = 25C IE = 2400A, VGE = 0V, Tj = 25C (Note 4) IE = 2400A, VGE = 0V, Tj = 125C (Note 4) VCC = 850V, IC = 2400A, VGE = 15V RG(on) = 0.27, Tj = 125C, Ls = 80nH Inductive load VCC = 850V, IC = 2400A, VGE = 15V RG(off) = 0.27, Tj = 125C, Ls = 80nH Inductive load VCC = 850V, IC = 2400A, VGE = 15V RG(on) = 0.27, Tj = 125C, Ls = 80nH Inductive load
Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Limits Typ -- 5.5 -- 2.60 3.10 210 30.0 10.1 19.8 2.30 1.85 -- -- 810 -- -- 870 -- 630 330
Max 36 6.5 0.5 3.30 -- -- -- -- -- 3.00 -- 1.60 1.30 -- 2.70 0.80 -- 2.70 -- --
Unit mA V A V nF nF nF C V s s mJ/pulse s s mJ/pulse s C mJ/pulse
(Note 4) (Note 4)
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150C). Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM2400HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, grease = 1W/m*K Min -- -- -- Limits Typ -- -- 6.0 Max 7.0 12.0 -- Unit K/kW K/kW K/kW
MECHANICAL CHARACTERISTICS
Symbol Item Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Min 7.0 3.0 1.0 -- 600 19.5 32.0 -- Limits Typ -- -- -- 1.5 -- -- -- 10 Max 13.0 6.0 2.0 -- -- -- -- -- Unit
M -- CTI da ds LC-E(int)
Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance
N*m kg -- mm mm nH
IGBT part
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM2400HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 4800 Tj = 25C 4000 VGE = 20V VGE = 15V 4000 VGE = 12V 4800
TRANSFER CHARACTERISTICS (TYPICAL) VCE = 10V
COLLECTOR CURRENT (A)
3200 VGE = 10V 2400
COLLECTOR CURRENT (A)
3200
2400
1600
1600
800
VGE = 8V
800 Tj = 25C Tj = 125C
0
0
1
2
3
4
5
6
0
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
5 VGE = 15V
4
EMITTER-COLLECTOR VOLTAGE (V)
Tj = 25C Tj = 125C
4
3
3
2
2
1
1 Tj = 25C Tj = 125C 0 0 800 1600 2400 3200 4000 4800
0
0
800
1600
2400
3200
4000
4800
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM2400HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CAPACITANCE CHARACTERISTICS (TYPICAL) 103
7 5 3 2
GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCC = 850V, IC = 2400A Tj = 25C
CAPACITANCE (nF)
102
7 5 3 2
GATE-EMITTER VOLTAGE (V)
Cies
16
12
Coes
8
101
7 5 3 2
Cres
4
100 -1 10
VGE = 0V, Tj = 25C f = 100kHz
23 5 7 100 23 5 7 101 23 5 7 102
0
0
5
10
15
20
25
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (C)
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 2500 VCC = 850V, VGE = 15V RG(on) = RG(off) = 0.27 Tj = 125C, Inductive load SWITCHING ENERGIES (mJ/pulse) Eon 5000
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 850V, IC = 2400A VGE = 15V Tj = 125C, Inductive load 4000
SWITCHING ENERGIES (mJ/pulse)
2000
Eon
1500
Eoff
3000
1000
2000
Eoff
500
Erec
1000
0
0
800
1600
2400
3200
4000
4800
0
Erec 0 0.5 1 1.5 2 2.5 3
COLLECTOR CURRENT (A)
GATE RESISTANCE ()
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM2400HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 101
7 5 3 2
FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102
7 5
REVERSE RECOVERY TIME (s)
3 2
3 2
SWITCHING TIMES (s)
td(off) 100
7 5 3 2
101
7 5 3 2
Irr
103
7 5 3 2
td(on) tf
10-1
7 5 3 2
100
7 5 3 2
102
7 5
tr
trr
3 2 5 7 103 5 7 104
10-2 1 10
23
5 7 102
23
5 7 103
23
5 7 104
10-1 1 10
23
5 7 102
101
23
23
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
REVERSE BIAS SAFE OPERATING AREA (RBSOA) 6000 VCC 1150V, VGE = +/-15V Tj = 125C, RG(off) 0.27
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2 Single Pulse, TC = 25C Rth(j-c)Q = 7K/kW Rth(j-c)R = 12K/kW
1.0
5000
COLLECTOR CURRENT (A)
0.8
4000
0.6
3000
0.4
2000
0.2
1000
0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s)
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
REVERSE RECOVERY CURRENT (A)
VCC = 850V, VGE = 15V RG(on) = RG(off) = 0.27 Tj = 125C, Inductive load
VCC = 850V, VGE = 15V RG(on) = RG(off) = 0.27 Tj = 125C, Inductive load
104
7 5

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