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| Composite Transistors UP03397 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits 5 (0.30) 4 0.20 -0.02 +0.05 0.100.02 1.200.05 * Two elements incorporated into one package (Transistors with built-in resistor) * Reduction of the mounting area and assembly cost by one half 1 1.000.05 1.600.05 Basic Part Number * UNR1154 + UNR1211 Display at No.1 lead 0.550.05 5 (0.20) 2 3 (0.50) (0.50) 5 (0.20) Features 1.600.05 Absolute Maximum Ratings Ta = 25C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating 50 50 100 -30 -30 -100 125 125 -55 to +125 Unit V V mA V V mA mW C C R2 10 k 1: Emitter (Tr1) 2: Base (Tr1) 3: Emitter (Tr2) 0 to 0.02 4: Collector (Tr2) 5: Collector (Tr1) Base (Tr2) SSMini5-F2 Package Marking Symbol: 3M Internal Connection (C1,B2) 5 (C2) 4 R1 10 k Tr1 R1 10 k Tr2 R2 47 k 1 (E1) 2 (B1) 3 (E2) 0.10 max Publication date: August 2004 SJJ00296AED 1 UP03397 Electrical Characteristics Ta = 25C 3C * Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = 10 V, IE = -2 mA, f = 200 MHz Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k -30% 0.8 10 1.0 150 4.9 0.2 +30% 1.2 35 0.25 Min 50 50 0.1 0.5 0.5 Typ Max Unit V V A A mA V V V k MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. * Tr2 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = -10 V, IE = 1 mA, f = 200 MHz Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 VCB = -30 V, IE = 0 VCE = -30 V, IB = 0 VEB = -3 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -50 mA, IB = - 0.33 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k -30% 10 0.213 80 -4.9 - 0.2 +30% 80 -1.2 Min -30 -30 - 0.1 - 0.5 - 0.1 Typ Max Unit V V A A mA V V V k MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta 150 Total power dissipation PT (mW) 125 100 75 50 25 0 0 40 80 120 Ambient temperature Ta (C) 2 SJJ00296AED UP03397 Characteristics charts of Tr1 IC VCE Ta = 25C 0.9 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 1 IC / IB = 10 hFE IC 300 VCE = 10 V Ta = 85C 160 IB = 1.0 mA 0.5 mA 0.4 mA 80 0.3 mA Forward current transfer ratio hFE Collector current IC (mA) 0.8 mA 0.7 mA 120 0.6 mA 250 25C 200 0.1 Ta = 85C 150 -25C 100 40 0.2 mA -25C 25C 0.01 1 10 100 50 0.1 mA 0 0 2 4 6 8 10 12 0 0.1 1 10 100 1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25C 100 1 000 VO = 5 V Ta = 25C IO VIN 100 VO = 0.2 V Ta = 25C VIN IO Output current IO (mA) Input voltage VIN (V) 10 10 1 1 1 0 10 20 30 40 0.1 1 2 3 4 5 0.1 0.1 1 10 100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJJ00296AED 3 UP03397 Characteristics charts of Tr2 IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IB = -500 A -100 IC / IB = 151 hFE IC 250 VCE = -10 V -100 -80 Forward current transfer ratio hFE Collector current IC (mA) -400 A 200 25C 150 Ta = 85C -60 -300 A Ta = 85C -10 25C -25C -25C 100 -40 -200 A -20 -100 A 0 50 0 -2 -4 -6 -8 -10 -12 -1 -10 -100 -1 000 0 - 0.1 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25C -100 VO = -5 V Ta = 25C IO VIN -10 VIN IO VO = - 0.2 V Ta = 25C Output current IO (mA) -10 Input voltage VIN (V) -1 -1 1 0 -10 -20 -30 -40 - 0.1 - 0.5 -1.0 -1.5 -2.0 - 0.1 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 SJJ00296AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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