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| Semiconductor THN5601B SiGe NPN Transistor Applications o VHF and UHF band medium power amplifier SOT-223 Unit in mm 6.5 3.0 4 Features 3.5 7.0 o 4.8 V operation o P1dB = 28 dBm at f = 900 MHz o GP = 8.5 dB at f = 900 MHz 1 2.3 0.7 4.6 2 3 Pin Configuration Pin No 1 2 3 4 Symbol E B E C Description Emitter Base Emitter Collector Absolute Maximum Ratings (TA = 25 ) Symbol VCBO VCEO VEBO IC Ptot Tstg Tj Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Storage Temperature Operating Junction Temperature Ratings 20 8 3 350 1 -65 ~ 150 150 Unit V V V mA W 1 THN5601B Thermal Characteristics Symbol Rth j-s Parameter Thermal resistance from junction to soldering point Test Condition Ptot = 1W; Ts = 60 ;note1 Value 55 Unit K/W * Note 1. Ts is temperature at the soldering point of the collector pin. Quick Reference Data RF performance at Ts 60 in common emitter test circuit Mode of Operation CW, class-AB f [MHz] 900 VCE [V] 4.8 POUT [mW] 600 GP [dB] 7 C [%] 60 2 THN5601B Electrical Characteristics (TA = 25 , unless otherwise specified) Parameter Collector Cut-off Current Symbol ICBO ICEO IEBO hFE fT |S21|2 MAG Cre Test Conditions VCB = 19 V, IE = 0 mA VCE = 8 V, IB = 0 mA VEB = 1.5 V, IC = 0 mA VCE = 4.8 V, IC = 60 mA VCE = 4.8 V, IC = 100 mA VCE = 4.8 V, IC = 100 mA, f = 1 GHz VCE = 4.8 V, IC = 100 mA, f = 1 GHz VCB = 4.8 V, IE = 0mA, f = 1 MHz Min. Typ. Max. 0.5 10 1.0 Unit GHz dB dB Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Insertion Power Gain Maximun Available Gain Reverse Transfer Capacitance 60 300 4.2 pF hFE Classification Marking hFE Value R1401 60 - 200 R1401* 170 - 300 DC Current Gain vs. Collector Current 200 180 DC Current Gain, hFE 160 140 120 100 80 60 40 20 0 -3 10 10 -2 Reverse Transfer Capacitance vs. Collector to Base Voltage VCE = 4.8 V Reverse Transfer Capacitance, Cre (pF) 7 f = 1 MHz 6 5 4 10 -1 10 0 3 0 2 4 6 8 10 Collector Current, IC (A) Collector to Base Voltage, VCB (V) 3 THN5601B Application Information (I) RF performance at Ts 60 in common emitter test circuit Mode of Operation CW, class-AB f [MHz] 900 VCE [V] 4.8 POUT [mW] 600 Output Power vs. Input Power 35 f = 900 MHz, VCE = .48 V, ICQ = 5 mA GP [dB] 7 C [%] 60 Power Gain and Collector Efficiency vs. Output Power 12 f = 900 MHz, VCE = 4.8 V, ICQ = 5 mA 100 90 70 60 50 40 30 20 10 0 35 Collector Efficiency, C (%) 80 10 Power Gain, GP (dB) 8 6 4 2 GP Output Power. POUT (dBm) 30 25 20 15 10 5 C 5 10 15 20 25 30 0 5 10 15 20 25 Output Power, POUT (dBm) Input Power, PIN (dBm) Typical Large Signal Impedance At VCE = 4.8 V, ICQ = 5 mA, POUT = 28 dBm Freq.[MHz] 800 820 840 860 880 900 920 940 960 980 1000 source Mag 0.615 0.631 0.65 0.666 0.682 0.698 0.711 0.724 0.735 0.746 0.760 Ang -162.5 -164 -165.9 -167.6 -169.5 -171.2 -172.7 -174.5 -175.9 -177.6 -179.3 Mag 0.460 0.478 0.494 0.509 0.524 0.538 0.550 0.563 0.578 0.593 0.600 load Ang 161.4 159.6 158.0 156.2 154.0 151.9 150.0 147.3 145.0 142.8 140.3 4 THN5601B Application Information (II) RF performance at Ts 60 in common emitter configuration. (I CQ = 5mA) Mode of Operation CW, class-AB f [MHz] 450 VCE [V] 4.8 PL [mW] 630 GP [dB] 14 C [%] 60 Optimum Input/Load Impedance as a frequency Freq. [MHz] 400 450 500 550 600 RS 8.35 7.38 6.80 6.74 7.03 ZS XS -3.34 -7.19 -11.03 -14.89 -18.92 RL 23.32 20.24 18.27 17.30 17.05 ZL XL 4.19 9.95 16.37 23.65 32.08 ZS ZL Input Impedance vs. Frequency 20 35 Load Impedance, ZL () 30 25 20 15 10 5 Load Impedance vs. Frequency W Input Impedance, ZS S() ) Input Impedance, Z ( 15 10 5 0 -5 -10 -15 -20 350 400 450 500 550 600 650 XS RS RL XL 0 350 400 450 500 550 600 650 Frequency (MHz) Frequency (MHz) 5 THN5601B Evaluation Board for 900 MHz Application Unit : mm Part List C1, C11 C2, C10 C3, C4, C8, C9 100nF 1nF 100pF 6pF 4pF 2.2 10 50nH 53 C5 THN5601B C7 R1 R2, R3 L1, L2 119 Test board : FR4 glass epoxy board, dielectric constant = 4.5, thickness = 0.8 mm Test condition : CW test, V CC = 4.8 V, ICQ = 5 mA, frequency = 900 MHz. Test Circuit Schematic Diagram VBB 50 nH 50 nH VCC 2.2 100 nF 10 1 nF 100 pF 100 pF 1 nF 10 100 nF 90 , /4 @ 900 MHz 90 , /4 @ 900 MHz OUTPUT 100 pF 4 pF THN5601 B INPUT 100 pF 6 pF 6 THN5601B Package Dimensions Unit : mm 0.95 0.85 S seating plane 6.7 6.3 0.32 0.24 3.1 2.9 4 0.10 0.01 16 max 3.7 3.3 7.3 6.7 16 10 max 1.8 max 1 2.3 4.6 2 0.8 0.6 3 7 |
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