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| Chip Silicon Rectifier HFM101 THRU HFM107 Ultra fast recovery type Formosa MS SMA 0.185(4.8) 0.177(4.4) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.067(1.7) 0.060(1.5) 0.110(2.8) 0.094(2.4) 0.165(4.2) 0.150(3.8) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDE DO-214AC C Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current CONDITIONS Ambient temperature = 50 C 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C o Symbol IO IFSM MIN. TYP. MAX. 1.0 30 5.0 150 UNIT A A uA uA o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR Rq JA CJ TSTG -55 32 20 C/w pF +150 o C SYMBOLS MARKING CODE H11 H12 H13 H14 H15 H16 H17 V RRM 50 *1 V RMS 35 70 *2 VR *3 VF *4 T RR *5 Operating temperature (o C) (V) HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 (V) (V) 50 100 200 300 (V) (nS) 100 200 300 400 600 800 1.0 50 -55 to +150 1.3 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage 140 210 280 420 560 400 600 800 1.7 75 *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (HFM101 THRU HFM107) FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 10 HF M1 0 3 5 4~ HF M1 0 INSTANTANEOUS FORWARD CURRENT,(A) 1~ HF M1 0 HF M1 0 .1 Tj=25 C Pulse Width 300us 1% Duty Cycle H 1.0 FM 10 6~ H FM 10 7 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) .01 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,(A) 30 .001 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 24 FORWARD VOLT AGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE 18 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 12 6 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 175 trr +0.5A | | | | | | | | JUNCTION CAPACITANCE,(pF) 120 100 80 60 40 20 0 -0.25A -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) |
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