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| A1015LT1 A1015LT1 TRANSISTOR (PNP) * "G" Lead(Pb)-Free SOT-23 FEATURES Power dissipation PCM: 0.2 W (Tamb=25 ) 1. 0 1. BASE 2. EMITTER 3. COLLECTOR 0. 95 Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 2. 4 1. 3 2. 9 1. 9 0. 95 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) VCE(sat) VBE(sat) unless otherwise specified) Test conditions MIN -50 - 50 -5 -0.1 -0.1 -0.1 130 400 -0.3 -1.1 80 V V MHz TYP MAX UNIT V V V Ic= -100A, IE=0 Ic= -0.1mA, IB =0 IE= -10A, IC=0 VCB=-50V , IE=0 VCE= -50V , IB=0 VEB=- 5V , IC=0 VCE=-6V, IC= -2mA IC=-100 mA, IB= -10mA IC=-100 mA, IB= -10mA VCE=-10V, IC= -1mA 0. 4 A A A fT f=30MHz CLASSIFICATION OF HFE(1) Rank Range MARKING L 130-200 BA H 200- 40 0 WEITRON http://www.weitron.com.tw A1015LT1 WEITRON http://www.weitron.com.tw |
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