 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF859/D NPN Silicon RF Power Transistor Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 to 960 MHz. * Specified for VCE = 24 Vdc, IC = 0.9 Adc Characteristics Output Power = 6.5 Watts CW Minimum Power Gain = 11.5 dB Minimum ITO = + 47 dBm Typical Noise Figure = 6 dB * Characterized with Small-Signal S-Parameters and Series Equivalent Large-Signal Parameters from 800 to 960 MHz * Silicon Nitride Passivated * 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.9 Adc and Rated Output Power * Will Withstand RF Input Overdrive of 2 W CW * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Circuit Board Photomaster Available by Ordering Document MRF859PHT/D from Motorola Literature Distribution. MRF859 MRF859S CLASS A 800 - 960 MHz 6.5 W (CW), 24 V NPN SILICON RF POWER TRANSISTOR CASE 319-07, STYLE 2 MRF859 CASE 319A-02, STYLE 2 MRF859S MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ TC = 60C Derate above 60C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO PD TJ Tstg Value 30 55 4 34 0.24 200 - 65 to +150 Unit Vdc Vdc Vdc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance (TJ = 150C, TC = 60C) Symbol RJC Max 3.9 Unit C/W ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 25 mA, IB = 0) Collector-Emitter Breakdown Voltage (IC = 25 mA, VBE = 0) Collector-Base Breakdown Voltage (IC = 25 mA, IE = 0) Emitter-Base Breakdown Voltage (IE = 5 mA, IC = 0) Collector Cutoff Current (VCB = 15 V, IE = 0) Teflon is a registered trademark of du Pont de Nemours & Co., Inc. V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES 28 55 55 4 -- 32 75 75 5 -- -- -- -- -- 2 Vdc Vdc Vdc Vdc mA (continued) Symbol Min Typ Max Unit REV 2 MOTOROLA RF (c) Motorola, Inc. 1995 DEVICE DATA MRF859 MRF859S 1 ELECTRICAL CHARACTERISTICS -- continued Characteristic ON CHARACTERISTICS DC Current Gain (IC = 1 A, VCE = 5 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, f = 1 MHz) FUNCTIONAL CHARACTERISTICS Common-Emitter Power Gain (VCE = 24 V, IC = 0.9 A, f = 840- 900 MHz, Pout = 6.5 W) Load Mismatch (VCE = 24 V, IC = 0.9 A, f = 840 MHz, Pout = 6.5 W, Load VSWR = 30:1, All Phase Angles) RF Input Overdrive (VCE = 24 V, IC = 0.9 A, f = 840 MHz) No degradation Third Order Intercept Point (VCE = 24 V, IC = 0.9 A, f1 = 900 MHz, f2 = 900.1 MHz, Meas. @ IMD 3rd Order = -40 dBc) Noise Figure (VCE = 24 V, IC = 0.9 A, f = 900 MHz) Input Return Loss (VCE = 24 V, IC = 0.9 A, f = 840- 900 MHz, Pout = 6.5 W) Pg 11.5 13 -- dB Cob 13 -- 26 pF hFE 20 60 120 -- Symbol Min Typ Max Unit No Degradation in Output Power -- -- 2 W Pin(over) ITO + 47 + 48 -- dBm NF IRL -- -- 6 -- -- -9 dB dB Table 1. Common Emitter S-Parameters VCE (V) 24 IC (A) 0.9 f (MHz) 800 820 840 860 880 900 920 940 960 S11 |S11| 0.906 0.902 0.897 0.894 0.893 0.893 0.894 0.897 0.903 170 170 171 171 171 171 172 172 172 |S21| 1.022 1.022 1.018 1.012 1.005 0.988 0.962 0.924 0.884 S21 12 7 3 -3 -8 - 14 - 20 - 26 - 32 |S12| 0.016 0.015 0.013 0.011 0.009 0.007 0.005 0.008 0.004 S12 11 8 6 4 3 5 14 47 102 |S22| 0.804 0.823 0.845 0.870 0.895 0.920 0.946 0.969 0.987 S22 - 168 - 167 - 167 - 167 - 168 - 168 - 169 - 170 - 172 Table 2. Zin and ZOL* versus Frequency f (MHz) 840 870 900 1.6 1.5 2.2 Zin (Ohms) 3.3 3.6 3.5 VCE = 24 V, IC = 0.9 A, Po = 6.5 W ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency. 2 1.6 1.7 ZOL* (Ohms) - 4.1 - 3.3 - 2.7 MRF859 MRF859S 2 MOTOROLA RF DEVICE DATA + R1 R8 F1 VCE V SUPPLY C1 R2 Q1 Q2 R3 R4 R5 R7 + R6 B1 B2 C16 L1 L2 TL1 C8 C9 DUT TL4 C15 TL5 OUTPUT C12 C10 C11 C13 C14 C7 C5 + C6 C2 C3 C4 L3 INPUT TL2 TL3 SB1 0.880 B1, B2 C1 C2, C5 C3, C6 C4 C7, C16 C8, C15 C9, C10 C11 C12, C13, C14 F1 L1, L2 L3 Q1 Q2 Ferrite Bead, Ferroxcube (56-390-65/3B) 250 F, 50 Vdc, Electrolytic Capacitor 10 F, 50 Vdc, Electrolytic Capacitor 0.1 F, Chip Capacitor 1000 pF, Chip Capacitor 100 pF, Chip Capacitor 43 pF, 100 Mil Chip Capacitor 6.8 pF, Mini-Unelco 18 pF, Mini-Unelco 0.8 - 8.0 pF, Johanson Gigatrim 3 Amp Micro-Fuse 3 Turns, 18 AWG, 0.170 ID 12 Turns, 22 AWG, 0.150 ID (10 1/2 W Resistor) MMBT2222ALT1, NPN Transistor BD136, PNP Transistor R1 R2 R3 R4 R5 R6 R7 R8 SB1 TL1, TL5 TL2 TL3 TL4 Board V Supply VCE 470 , 1/4 W 500 Potentiometer, 1/4 W 4.7K , 1/4 W 2 x 4.7K , 1/4 W 50 , 2 W 75 , 1/4 W 4.7 , 1/4 W 4 , 10 W Copper Block 0.550 x 0.180 x 0.050 50 , Microstrip Transmission Line Microstrip Transmission Line Microstrip Transmission Line Microstrip Transmission Line 0.030 Glass-Teflon(R) 2 oz. Cu, r = 2.55 + 27.6 Vdc 0.5 Vdc Due to Resistor Tolerance + 24 Vdc @ 0.9 A Figure 1. MRF859 Class A RF Test Fixture Schematic MOTOROLA RF DEVICE DATA MRF859 MRF859S 3 TYPICAL CHARACTERISTICS 15 14.5 G pe , POWER GAIN (dB) 14 13.5 13 12.5 VSWR 12 830 840 850 860 870 880 f, FREQUENCY (MHz) 890 900 1 910 VCC = 24 Vdc IC = 900 mA Pout = 6.5 W (CW) Gpe 4 3.5 3 2.5 2 1.5 VSWR in , INPUT VSWR 1.37E+06 1.00E+06 1.00E+05 1.00E+04 1.00E+03 4.19E+05 1.42E+05 5.24E+04 2.11E+04 8.94E+03 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 VCE (Vdc) 100 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (C) 240 260 Figure 2. Performance in Broadband Circuit 14 Pout , OUTPUT POWER (WATTS) 12 10 8 6 4 2 0 0 0.2 0.4 1 1.2 1.4 0.6 0.8 Pin, INPUT POWER (WATTS) 1.6 1.8 2 Pout VCC = 24 Vdc IC = 900 mA f = 870 MHz Gpe 15 14 2500 2000 13 12 11 10 9 8 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 VCE (Vdc) G pe , POWER GAIN (dB) IC (mAdc) 1500 TJ = 150C Tf = 60C 1000 500 Figure 3. Output Power & Power Gain versus Input Power Figure 4. DC SOA 2500 MTBF FACTOR (HOURS x AMPS2) 1.00E+09 1.00E+08 1.00E+07 1.02E+08 2.09E+07 5.00E+06 2000 IC (mAdc) 1500 TJ = 175C Tf = 60C 1000 500 Figure 5. DC SOA Figure 6. MTBF Factor versus Junction Temperature MRF859 MRF859S 4 MOTOROLA RF DEVICE DATA R3 R2 R1 Q1 R5 R6 + C2 C3 C8 C12 C10 C11 C13 C14 C15 R7 C4 R4 B2 B1 C16 L1 C9 L2 L3 C7 C1 Q2 C6 C5 + R8 SB1 MRF859 Figure 7. MRF859 Test Fixture Component Layout Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA RF DEVICE DATA MRF859 MRF859S 5 PACKAGE DIMENSIONS IDENTIFICATION NOTCH 6 -AL 5 4 Q 2 PL 0.15 (0.006) M TA M N M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. -N1 2 3 K F D 2 PL 0.38 (0.015) M B J H C E -TSEATING PLANE TA M M N M M 0.38 (0.015) TA N M DIM A B C D E F H J K L N Q INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 STYLE 2: PIN 1. 2. 3. 4. 5. 6. EMITTER (COMMON) BASE (INPUT) EMITTER (COMMON) EMITTER (COMMON) COLLECTOR (OUTPUT) EMITTER (COMMON) CASE 319-07 ISSUE M MRF859 IDENTIFICATION NOTCH 6 A 5 4 K B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.355 0.365 0.225 0.235 0.110 0.125 0.115 0.125 0.075 0.085 0.035 0.045 0.004 0.006 0.090 0.110 MILLIMETERS MIN MAX 9.02 9.27 5.72 5.96 2.80 3.17 2.93 3.17 1.91 2.15 0.89 1.14 0.11 0.15 2.29 2.79 1 2 3 F J D C H SEATING PLANE DIM A B C D F H J K STYLE 2: PIN 1. 2. 3. 4. 5. 6. EMITTER BASE EMITTER EMITTER COLLECTOR EMITTER CASE 319A-02 ISSUE B MRF859S How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF859 MRF859S 6 *MRF859/D* MOTOROLA RF DEVICEMRF859/D DATA |
Price & Availability of MRF859
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |