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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. * Wideband CDMA Performance: -45 dB ACPR @ 4.096 MHz, 28 Volts Output Power -- 3.5 Watts Power Gain -- 14 dB Efficiency -- 15% * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. MRF21030R3 MRF21030SR3 2.2 GHz, 30 W, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465E-03, STYLE 1 NI-400 MRF21030R3 CASE 465F-03, STYLE 1 NI-400S MRF21030SR3 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 -0.5, +15 83.3 0.48 -65 to +200 200 Unit Vdc Vdc Watts W/C C C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 2.1 Unit C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA MRF21030R3 MRF21030SR3 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 A) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 250 mA) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 30 W CW, IDQ = 250 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. Gps -- 13 -- dB Ciss Coss Crss -- -- -- 98.5 37 1.3 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) gfs 2 2 -- -- 3 3.3 0.29 2 4 4.5 0.4 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1 1 Vdc Adc Adc Symbol Min Typ Max Unit -- 33 -- % IMD -- -30 -- dBc IRL -- -13 -- dB Gps 12 13 -- dB 31 33 -- % IMD -- -30 -27.5 dBc IRL -- -13 -9 dB No Degradation In Output Power Before and After Test MRF21030R3 MRF21030SR3 2 MOTOROLA RF DEVICE DATA VGG + C6 C5 B1 B2 + C4 C8 C10 C11 VDD + C12 C13 R1 R2 L1 RF INPUT L2 RF OUTPUT Z1 Z2 Z3 C2 C1 Z4 Z5 Z6 DUT Z7 Z8 Z9 C9 Z10 C3 C7 B1, B2 C1 C2 C3 C4 C5, C12 C6, C13 C7, C8 C9 C10 C11 L1, L2 R1, R2 Short Ferrite Beads 1 pF Chip Capacitor 4.7 pF Chip Capacitor 0.5 pF Chip Capacitor 3.9 pF Chip Capacitor 0.1 F Chip Capacitors 470 F, 63 V Electrolytic Chip Capacitors 0.3 pF Chip Capacitors 3.6 pF Chip Capacitor 22 F Tantalum Chip Capacitor 5.1 pF Chip Capacitor 12.5 nH Inductors 12 Chip Resistors (1206) Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Board 0.153 x 0.087 Microstrip 0.509 x 0.156 Microstrip 0.572 x 0.087 Microstrip 0.509 x 0.232 Microstrip 0.277 x 0.143 Microstrip 0.200 x 0.305 Microstrip 0.200 x 0.511 Microstrip 0.510 x 0.328 Microstrip 0.608 x 0.081 Microstrip 0.030 Glass Teflon, TLX8-0300 Taconix (r = 2.55) Figure 1. MRF21030 Test Circuit Schematic C13 + V BIAS C6 C5 B1 R1 C4 WB1 WB2 C2 L1 C10 C8 L2 C7 CUT OUT AREA R2 B2 C12 C11 + VSUPPLY C1 C3 C9 MRF 21030 Rev 1 MRF21030 Rev-1 Ground Ground Figure 2. MRF21030 Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF21030R3 MRF21030SR3 3 TYPICAL CHARACTERISTICS , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 60 50 40 30 20 10 0 2080 -5 -10 -15 -20 -25 -30 -35 2200 30 25 VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz Channel Spacing (Channel Bandwidth): 4.096 MHz (5 MHz) -20 -30 -40 ACPR Gps -50 -60 -70 ADJACENT CHANNEL POWER RATIO (dB) IMD, INTERMODULATION DISTORTION (dBc) IRL VDD = 28 Vdc, Pout = 30 W (PEP), IDQ = 250 mA Two-Tone Measurement, 100 kHz Tone Spacing Gps IMD 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 20 15 10 5 0 2 1 3 4 5 Pout, OUTPUT POWER (WATTS Avg.) CDMA 6 Figure 3. Class AB Broadband Circuit Performance Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power -25 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, f = 2140 MHz Two-Tone Measurement, -30 100 kHz Tone Spacing -35 -40 200 mA 250 mA 400 mA 300 mA 350 mA 10 Pout, OUTPUT POWER (WATTS) PEP 100 -20 -30 -40 -50 -60 -70 1.0 VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing 3rd Order 7th Order 5th Order -45 -50 -55 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 5. Intermodulation Distortion versus Output Power 16 15 Figure 6. Intermodulation Distortion Products versus Output Power -22 -24 G ps , POWER GAIN (dB) 15 G ps , POWER GAIN (dB) 400 mA 350 mA 300 mA 250 mA 200 mA VDD = 28 Vdc, f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing 14.5 Gps 14 IMD -26 -28 -30 -32 Pout = 30 W (PEP) IDQ = 250 mA, f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing 22 24 26 28 30 32 -34 -36 -38 34 14 13.5 13 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 13 20 VDD, DRAIN VOLTAGE (VOLTS) Figure 7. Power Gain versus Output Power Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF21030R3 MRF21030SR3 4 MOTOROLA RF DEVICE DATA Zin f = 2170 MHz Zo = 25 f = 2110 MHz ZOL* f = 2170 MHz f = 2110 MHz VDD = 28 V, IDQ = 250 mA, Pout = 30 W PEP f MHz 2110 2140 2170 Zin Zin 15.3 + j9.4 14.6 + j9.4 14.3 + j8.8 ZOL* 3.7 + j0.78 3.4 + j0.37 3.0 - j0.13 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF21030R3 MRF21030SR3 5 NOTES MRF21030R3 MRF21030SR3 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS 2X G B 1 2X K 2 2X D bbb M Q M bbb TB M A M 3 B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .003 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .110 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.07 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 2.79 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC TA M B M N (LID) ccc M TA M B E M ccc C M TA M B M R (LID) F aaa M TA M B M M (INSULATOR) A T SEATING PLANE S (INSULATOR) aaa M H B M TA M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A CASE 465E-03 ISSUE D NI-400 MRF21030R3 2X D bbb M T A 1 M B M 2 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .003 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.08 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF 2X K R ccc E M (LID) TA M B M ccc C 3 M TA M B M N (LID) F H A A (FLANGE) S (INSULATOR) T M SEATING PLANE aaa B (FLANGE) M TA M B M (INSULATOR) B aaa M TA M B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F-03 ISSUE B NI-400S MRF21030SR3 MOTOROLA RF DEVICE DATA MRF21030R3 MRF21030SR3 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF21030R3 MRF21030SR3 8 MOTOROLA RF DEVICE MRF21030/D DATA |
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