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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13001 TRANSISTORNPN (c) TO 251 FEATURES Power dissipation PCM : 1.2 W Tamb=25ae(c) Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25 ae unless otherwise specified(c) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(c) 1 DC current gain hFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(sat) VBE Test 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 conditions MIN 600 400 7 TYP MAX UNIT V V V Ic= 100|I =0 A IE IC= 1 mA , IB=0 IE= 100 |I IC=0 A VCB= 600 V , IE=0 VCE= 400 V , IB=0 VEB= 7 V , VCE= 20 IC=0 100 200 100 10 5 0.5 1.2 1.1 40 |I A |I A |I A V, IC= 20m A VCE= 10V, IC= 0.25 mA IC= 50mA, IB= 10 m A IC= 50 mA, IB= 10m A IE= 100 mA, VCE= 20 V, I =20mA C V V V Transition frequency f T 8 MHz f = 1MHz Fall time Storage time t f IC=50mA, IB1=-IB2=5mA, 0.3 1.5 |I s |I s tS VCC=45V CLASSIFICATION OF h FE(1) Rank Range 10-15 15-20 20-25 25-30 30-35 35-40 TO-251 PACKAGE OUTLINE DIMENSIONS D D1 C1 A B b1 b L e e1 E A1 C Symbol A A1 B b b1 c c1 D D1 E e e1 L Dimensions In Millimeters Min 2.200 1.020 1.350 0.500 0.700 0.430 0.430 6.350 5.200 5.400 2.300TYP 4.500 7.500 4.700 7.900 Max 2.400 1.270 1.650 0.700 0.900 0.580 0.580 6.650 5.400 5.700 Min Dimensions In Inches Max 0.094 0.050 0.065 0.028 0.035 0.023 0.023 0.262 0.213 0.224 0.091TYP 0.177 0.295 0.185 0.311 0.087 0.040 0.053 0.020 0.028 0.017 0.017 0.250 0.205 0.213 |
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