 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| UNISONIC TECHNOLOGIES CO., LTD UN1518 POWER (SWITCHING) TRANSISTOR FEATURES * Bipolar power transistor * High current switching * High hFE * Low VCE(SAT) NPN SILICON TRANSISTOR *Pb-free plating product number: UN1518L ORDERING INFORMATION Order Number Normal Lead Free Plating UN1518-AE3-R UN1518L-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-088,A UN1518 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current (Pulse) Note 2 ICM 6 A Collector Current (DC) IC 2.5 A Base Current IB 500 mA Total Device Dissipation PD 625 mW Storage Temperature TSTG -50 ~ +150 Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse test tp=300s. 2% ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100A Collector-Emitter Breakdown Voltage BVCEO* IC=10mA Emitter-Base Breakdown Voltage BVEBO IE=100A Collector Cut-Off Current ICBO VCB=16V Emitter Cut-Off Current IEBO VEB=4V Collector Emitter Cut-Off Current ICES VCES=16V IC=0.1A, IB=10mA Collector-Emitter Saturation Voltage VCE(SAT)* IC=1A, IB=10mA IC=2.5A, IB=50mA Base-Emitter Saturation Voltage VBE(SAT)* IC=2.5A, IB=50mA Base-Emitter Turn-On Voltage VBE(ON)* IC=2.5A,VCE=2V IC=10mA, VCE=2V IC=200mA, VCE=2V Static Forward Current Transfer Ratio hFE* IC=2A, VCE=2V IC=6A, VCE=2V Transition Frequency fT IC=50mA, VCE=10V f=100MHz Output Capacitance Cob VCB=10V, f=1MHz Turn-On Time t(ON) VCC=10V, IC=1A IB1=-IB2=10mA Turn-Off Time t(OFF) * Pulse test conditions. tp=300s. 2% MIN 20 20 5 TYP 100 27 8.3 MAX UNIT V V V nA nA nA mV V V 200 300 200 100 100 10 70 130 0.89 0.79 400 450 360 180 140 23 170 400 100 100 100 15 150 200 1.0 1.0 30 MHz pF nS nS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R206-088,A UN1518 TYPICAL CHARACTERISTICS (Ta=25) NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Base-Emitter Saturation Voltage VBE(SAT) (V) Base-Emitter Turn-ON Voltage VBE(ON) (V) Collector-Emitter Saturation Voltage VCE(SAT) (V) DC Current Gain, hFE 3 of 3 QW-R206-088,A |
Price & Availability of UN1518
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |